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    LOW HEMT Search Results

    LOW HEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    LOW HEMT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CFH120

    Abstract: CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P
    Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-06 Q62705-K0671 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 CFH120 CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P PDF

    MAX 8985

    Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
    Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 MAX 8985 pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10 PDF

    5703 infineon

    Abstract: pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm
    Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-06 Q62705-K0671 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 5703 infineon pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm PDF

    GS 9521

    Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
    Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-08 CFH120-10 GS 9521 CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K PDF

    pseudomorphic HEMT

    Abstract: CFH120-08 HEMT marking P
    Text: CFH120-08 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120-08 Q62705-K0603 pseudomorphic HEMT CFH120-08 HEMT marking P PDF

    MARKING CODE l22 lna

    Abstract: No abstract text available
    Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. • Low noise figure The ATF-331M4’s small size and low profile makes it


    Original     		ATF-331M4 ATF-331M4 family10 5989-4216EN AV02-3621EN MARKING CODE l22 lna PDF

    vHF amplifier module

    Abstract: l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4 ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143
    Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. Features • Low noise figure The ATF-331M4’s small size and low profile makes it


    Original     		ATF-331M4 ATF-331M4 5988-4993EN 5989-4216EN vHF amplifier module l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143 PDF

    Micro-X marking "K"

    Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
    Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz


    Original     		MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3 PDF

    mgf4941al

    Abstract: MITSUBISHI electric R22 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure


    Original     		19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32 PDF

    ATF-36077

    Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
    Text: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.


    Original     		ATF-36077 ATF-36077 5965-8726E AV02-1222EN ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma PDF

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727 PDF

    MGF4963BL

    Abstract: InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
    Text: 16/Oct./2009 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4963BL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. FEATURES Low noise figure @ f=20GHz


    Original     		16/Oct MGF4963BL MGF4963BL 20GHz 4000pcs InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C PDF

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		MGF4963BL MGF4963BL 20GHz 4000pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)


    Original     		MGF4964BL MGF4964BL 20GHz 4000pcs PDF

    ATF-35143-BLKG

    Abstract: rg1 7809 ATF-35143 application note ATF35143 sot 89 7809 LG 5804 LA 7809
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features • Lead-free Option Available Surface Mount Package SOT-343 • Low Noise Figure • Excellent Uniformity in Product Specifications • Low Cost Surface Mount


    Original     		ATF-35143 OT-343 SC-70) ATF-35143 SC-70 OT-343) devi0025 5988-7943EN ATF-35143-BLKG rg1 7809 ATF-35143 application note ATF35143 sot 89 7809 LG 5804 LA 7809 PDF

    MGF4941AL

    Abstract: MGF4941 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure


    Original     		26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32 PDF

    1 928 405 766

    Abstract: GD-32 rogers 4403
    Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)


    Original     		MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403 PDF

    MGF4963BL

    Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		MGF4963BL MGF4963BL 20GHz 4000pcs HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B PDF

    top 261

    Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi PDF

    MGF4964

    Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
    Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)


    Original     		MGF4964BL MGF4964BL 20GHz 4000pcs MGF4964 Micro-X marking "K" transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496 PDF

    ATF-33143

    Abstract: ATF-34143
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 1600 micron Gate Width • Low Cost Surface Mount Small Plastic Package


    Original     		ATF-33143 OT-343 SC-70) 5988-4211EN 5988-5906EN ATF-33143 ATF-34143 PDF

    atf34143

    Abstract: ATF-33143 ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 800 micron Gate Width • Low Cost Surface Mount Small Plastic Package


    Original     		ATF-34143 OT-343 SC-70) cha004 5968-7938E 5988-4210EN atf34143 ATF-33143 ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 PDF

    lna marking code vp

    Abstract: No abstract text available
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 1600 micron Gate Width • Low Cost Surface Mount Small Plastic Package


    Original     		ATF-33143 OT-343 SC-70) ATF-33143 SC-70 OT-343) 5968-7454E 5988-4211EN lna marking code vp PDF

    ALH102C

    Abstract: Low Noise HEMT ALH102 AL-H ALH IC
    Text: TRYw Superior Performance from the Latest MMIC Technology Low Noise HEMT MMIC Amplifier ALH102C Darlington Amplifier Series • RF Frequency: 2 to 20 GHz • Low Noise Figure < 3.5 dB • 10 dB Gain • Unconditionally Stable • Low DC Power Consumption •


    OCR Scan     		ALH102C ALH102C 006/J* 9701455-0027-S-057 Low Noise HEMT ALH102 AL-H ALH IC PDF