LOW CAPACITANCE BJT Search Results

LOW CAPACITANCE BJT Result Highlights (5)

Part	Manufacturer	Description
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC355DD7LQ224KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

LOW CAPACITANCE BJT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MYXB21200-20GAB Abstract: silicon carbide Text: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R on • High voltage 1200V isolation in a small package	Original	MYXB21200-20GAB 210OC Double1200 MYXB21200-20GAB silicon carbide	PDF
transistor on 4409 Abstract: NEC k 3654 PIN CONNECTIONS OF IC 4047 NE687 S21E UPA861TD UPA861TD-T3 Transistor NEC K 3654 Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS	Original	UPA861TD NE894 NE687 transistor on 4409 NEC k 3654 PIN CONNECTIONS OF IC 4047 S21E UPA861TD-T3 Transistor NEC K 3654	PDF
NE687 Abstract: S21E UPA861TD UPA861TD-T3 vaf meter transistor on 4409 Text: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 3 E2 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1	Original	UPA861TD NE894 NE687 S21E UPA861TD-T3 vaf meter transistor on 4409	PDF
NF024 Abstract: transistor on 4409 Transistor NEC K 3654 NE687 S21E UPA861TD UPA861TD-T3-A 024BF Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 0.8 +0.07 -0.05 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1	Original	UPA861TD NE894 NE687 NF024 transistor on 4409 Transistor NEC K 3654 S21E UPA861TD-T3-A 024BF	PDF
NX3008NBKMB Abstract: IP4303CX4 PCMF2DFN1 Text: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL	Original	PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DSN0603 DFN2520 DFN4020 NX3008NBKMB IP4303CX4 PCMF2DFN1	PDF
supercapacitor Abstract: ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100 Text: CAP-XX APPLICATION NOTE No. 1004 Driving High-Power White LED Flash in Camera Phones Outline Supercapacitors with low ESR Equivalent Series Resistance and high capacitance are ideal components for use in pulsed-power applications, such as Flash LEDs and GPRS transmitters,	Original	AN1004 31-May-2005 supercapacitor ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100	PDF
"CHAPTER 1 Introduction to Power Semiconductors" Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage	Original	AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt	PDF
DMOSFET Abstract: ZCP0545A Text: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.	Original	ZCP0545A DMOSFET ZCP0545A	PDF
SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier	PDF
IGBT/MOSFET Gate Drive Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it	Original	20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging	PDF
Drive Base BJT Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576 Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE	Original	AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576	PDF
Logic Level Gate Drive mosfet Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v	PDF
Untitled Abstract: No abstract text available Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM201MN KSD-T6T002-001	PDF
Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM202MN KSD-T6T001-002	PDF

Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM202MN KSD-T6T001-001	PDF
Untitled Abstract: No abstract text available Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM201MN KSD-T6T002-000	PDF
Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM202MN KSD-T6T001-001	PDF
bjt specifications Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT	Original	AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 - MAY 94 This IG BT com b in e s th e high in p u t im p e d a n c e of th e D M O S F E T w ith th e high c u rre n t d en sity o f th e BJT. FEATURES * Extrem ely low on state voltage * No need to derate for higher tem peratures	OCR Scan	ZCN0545A 300ns.	PDF
NUS5531MT Abstract: No abstract text available Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and	Original	NUS5531MT NUS5531MT/D NUS5531MT	PDF
Transistor BJT 547 b Abstract: 120E2 BJT 12 NUS5531MTR2G NUS5531MT Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and	Original	NUS5531MT NUS5531MT/D Transistor BJT 547 b 120E2 BJT 12 NUS5531MTR2G NUS5531MT	PDF
Untitled Abstract: No abstract text available Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees	OCR Scan	HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi	PDF
NUS3116MT Abstract: No abstract text available Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and	Original	NUS3116MT NUS3116MT/D NUS3116MT	PDF
AYWW marking code IC Abstract: NUS3116MT NUS3116MTR2G OF BJT 547 Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and	Original	NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547	PDF

LOW CAPACITANCE BJT Search Results

LOW CAPACITANCE BJT Result Highlights (5)

LOW CAPACITANCE BJT Datasheets Context Search

MYXB21200-20GAB

transistor on 4409

NE687

NF024

NX3008NBKMB

supercapacitor

"CHAPTER 1 Introduction to Power Semiconductors"

DMOSFET

SIT Static Induction Transistor

IGBT/MOSFET Gate Drive

Drive Base BJT

Logic Level Gate Drive mosfet

Untitled

Untitled

Untitled

Untitled

Untitled

bjt specifications

Untitled

NUS5531MT

Transistor BJT 547 b

Untitled

NUS3116MT

AYWW marking code IC