3055L transistor
Abstract: Mosfet Sot223
Text: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,
|
Original
|
RFT3055LE
TA49158.
RFT3055LE
OT-223
330mm
EIA-481
3055L transistor
Mosfet Sot223
|
PDF
|
6680a
Abstract: FDS6680A SOIC-16
Text: October 2001 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
FDS6680A
OT-23
6680a
FDS6680A
SOIC-16
|
PDF
|
Si4822DY
Abstract: SOIC-16
Text: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4822DY
OT-23
SOIC-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4822DY
OT-23
|
PDF
|
Si4874DY
Abstract: SOIC-16
Text: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
Original
|
Si4874DY
SOIC-16
|
PDF
|
FDS6898AZ-F085
Abstract: FDS6898AZ
Text: FDS6898AZ_F085 tm Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored
|
Original
|
FDS6898AZ
FDS6898AZ-F085
|
PDF
|
F10N12L
Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)
|
OCR Scan
|
RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
92CS-3374I
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N12L
F10N15L
10N15L
F10N12
RFP10N15L
F10N15
10n15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6930A
OT-23
SOIC-16
|
PDF
|
F011
Abstract: F63TNR F852 FDS6690A L86Z SOIC-16
Text: April 1999 FDS6690A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6690A
OT-23
F011
F63TNR
F852
FDS6690A
L86Z
SOIC-16
|
PDF
|
6912A Datasheet
Abstract: 6912A FDS6912A SOIC-16
Text: June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6912A
OT-23
FDS6912A
6912A Datasheet
6912A
SOIC-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6961A
OT-23
|
PDF
|
J1 TRANSISTOR DIODE SOT-23 PACKAGE
Abstract: SOT 23 MOSFET MARKING B9 sot-23 BSS138LT1 SOT-23 MOSFET
Text: MOTOROLA Order this document by BSS138LT1/D SEMICONDUCTOR TECHNICAL DATA { ? » ] . l i n e Green W BSS138LT1 Motorola Preferred Device Unreleased Data Sheet N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N-CHANNEL LOGIC LEVEL TMOS FET
|
OCR Scan
|
BSS138LT1/D
BSS138LT1
OT-23
J1 TRANSISTOR DIODE SOT-23 PACKAGE
SOT 23 MOSFET
MARKING B9 sot-23
BSS138LT1
SOT-23 MOSFET
|
PDF
|
FDB6035AL
Abstract: FDP6035AL 24A 60V LOGIC N-Channel MOSFET
Text: July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
FDP6035AL/FDB6035AL
FDP6035AL
FDB6035AL
24A 60V LOGIC N-Channel MOSFET
|
PDF
|
3055VL
Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
MTD3055VL
MTD3055VL
O-252
3055VL
a9hv
transistor WT9
u6 transistor
AYRA
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
Si4920DY
OT-23
|
PDF
|
FDS6990A
Abstract: SOIC-16
Text: October 2002 FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6990A
OT-23
SOIC-16
OT-223
FDS6990A
SOIC-16
|
PDF
|
FDP7045L
Abstract: m 9835 CBVK741B019 EO70 F63TNR FDB7045L FDP7060 NDP4060L
Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
|
Original
|
FDP7045L/FDB7045L
FDP7045L
m 9835
CBVK741B019
EO70
F63TNR
FDB7045L
FDP7060
NDP4060L
|
PDF
|
CBVK741B019
Abstract: EO70 FDB8030L FDP7060 FDP8030L NDP4060L
Text: April 1998 PRELIMINARY FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
|
Original
|
FDP8030L/FDB8030L
CBVK741B019
EO70
FDB8030L
FDP7060
FDP8030L
NDP4060L
|
PDF
|
Si4920DY
Abstract: SOIC-16
Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
Si4920DY
OT-23
SOIC-16
|
PDF
|
data sheet 6690a
Abstract: SOIC-16 F011 F63TNR F852 FDS6690A L86Z
Text: October 2001 FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6690A
OT-23
data sheet 6690a
SOIC-16
F011
F63TNR
F852
FDS6690A
L86Z
|
PDF
|
AN7254
Abstract: AN7260 RFL1N12L RFL1N15L
Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,
|
Original
|
O205AF)
RFL1N12L,
RFL1N15L
RFL1N12L
O-205AF
AN7254
AN7260.
AN7260
RFL1N12L
RFL1N15L
|
PDF
|
F15N05L
Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
Text: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m
|
OCR Scan
|
RFM15N05L,
RFM15N06L,
RFP15N05L,
RFP15N06L
RFM15N05L
RFM15N06L
RFP15N05L
RFP15N06L*
92CS-38IS0
F15N05L
F15N06L
f15n05
f15n
RFP15N06L
rca application notes
RCA bipolar transistors
|
PDF
|
6990a
Abstract: FDS6990A SOIC-16
Text: June 1999 FDS6990A Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
|
Original
|
FDS6990A
OT-23
SOIC-16
OT-223
6990a
FDS6990A
SOIC-16
|
PDF
|
HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
|
PDF
|