BUK453-50B
Abstract: buk453 BUK453-50A T0220AB
Text: N AMER P H I L I P S / D I S C R E T E 25E D • bt.53131 0020445 b m PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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bfa53T31
0G20445
BUK453-50A
BUK453-50B
BUK453
BUK453-50B
T0220AB
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BUK627-600A
Abstract: BUK627-600B BUK627-600C
Text: N AMER PHILIPS/ DIS CRETE 2SE D WÊ DOSGbbS T m PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a p[astic envelope. FREDFET with fast recovery
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BUK627-600A
BUK627-600B
BUK627-600C
BUK627
-600A
-600B
-600C
BUK627-600A
BUK627-600B
BUK627-600C
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BUK436-1000B
Abstract: buk436-1000
Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK436-1000B
7110fl2fci
buk436-1000
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BUK657-400A
Abstract: BUK657-400B BUK657 T0220AB 40QA
Text: N AMER P H I L I P S / D I S C R E T E 2SE D m ^ 5 3 = 3 3 1 □□ 2 0 7 0 Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK657-400A
BUK657-400B
T-37-/3
BUK657
-40QA
-400B
T0220AB
40QA
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cf rh transistor
Abstract: BUK627-600A BUK627-600B BUK627-600C T-39-1J Ti34
Text: N AMER PHILIPS/DISCRETE 2SE D WÊ bb53T31 DOSGbbS PowerMOS transistor Fast Recovery Diode FET ^ BUK627-600A BUK627-600B BUK627-600C r-37- GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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bb53T31
BUK627-600A
BUK627-600B
BUK627-600C
BUK627
-600A
-600B
-600C
cf rh transistor
T-39-1J
Ti34
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