Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A32 SERIES 4M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-424000A32 series is a 4 194 304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 are assembled.
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MC-424000A32
32-BIT
C-424000A32
110ns
424000A32-60
424000A32-70
LjM27525
00SSti
00SSL0S
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D4242
Abstract: IC 741 cn
Text: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and
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uPD42S16170L
uPD42S17170L
uPD42S18170L
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
D4242
IC 741 cn
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Untitled
Abstract: No abstract text available
Text: bMS7SaS DOMSSSÜ 84T B N E C E MOS INTEGRATED C IR CU IT /¿PD42S16160,42S17160,42S18160 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE - P R E L I M I N A R Y -DESCRIPTIO N The NEC ; ì PD42S16160, ¿¿PD42S17160 and /¿PD42S18160 are 1 048 576 words by 16 b it s dynamic
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PD42S16160
42S17160
42S18160
PD42S16160,
PD42S17160
PD42S18160
P32VF-100-475A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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riuPD42S16800L
4216800L,
42S17800L,
4217800L
iiPD42S16800L,
4217800L
PD42S16800L,
42S17800L
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Untitled
Abstract: No abstract text available
Text: • h427S35 D0MS223 081 B N E C E MOS INTEGRATED CIRCUIT ^PD42S16800L,42S17800L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE PR ELIM IN A R Y D E S C R IP T IO N The NEC // PD42S16800L and u PD42S17800L are 2 097 152 words by 8 b its dynamic CMOS RAM
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h427S35
D0MS223
PD42S16800L
42S17800L
PD42S17800L
PD42S16800L)
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m2137
Abstract: No abstract text available
Text: b427525 Q0I4212,:Ì bll M N E C E MOS INTEGRATED CIRCUIT /¿PD4 2 S 1 6 1 0 0 ,4 2 S 1 7 1 0 0 a 16 M BIT D Y N A M IC RAM FAST PAGE M O DE P R E L I M I N A R Y -DESCRIPTIO N The NEC //PD42S16100 and /¿PD42S17100 are 16 777 216 words by 1 bit dynamic CMOS RAM with
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b427525
uPD42S16100
uPD42S17100
//PD42S16100)
P32VF-100-475A
P32VF-100-475A
m2137
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NEC V50 hardware
Abstract: D70208 PD70208L PD70208 U10154E uPD70216 PD70208GF UPD70208L-10 PP70208 70216GF-10-3B9
Text: DATA SHEET MOS INTEGRATED CIRCUIT jJ*D70208,70208 A , 70216,70216 (A) V40 , V50™ 1 6 /8 ,16-BIT MICROPROCESSOR DESCRIPTION The //PD70208 (V40) is a 16/8-bit microprocessor of 16-bit architecture provided with an 8-bit data bus. The /iPD70216 (V50) is a 16-bit microprocessor of 16-bit architecture provided with a 16-bit data bus.
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D70208
V40TM
V50TM
16-BIT
uPD70208
16/8-bit
uPD70216
NEC V50 hardware
PD70208L
PD70208
U10154E
PD70208GF
UPD70208L-10
PP70208
70216GF-10-3B9
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nec 28 pin
Abstract: 4217400-60 DGS22
Text: MOS INTEGRATED CIRCUIT f/¿PD42S16400 ,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T he ¿iPD42S 16400, 4216400, 42S17400, 4217400 are 4 194 304 w o rd s by 4 bits d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16400, 42S17400 can execute CAS before RAS se lf refresh and
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uPD42S16400
uPD4216400
uPD42S17400
uPD4217400
iPD42S
42S17400,
PD42S16400,
42S17400
//PD42S16400,
nec 28 pin
4217400-60
DGS22
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4216100
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT r/iPD42S16100 ,4 2 1 6 1 0 0 ,4 2 S 1 7 1 0 0 ,4217100 16M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The juPD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the ¿¿PD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
16M-BIT
PD42S16100,
42S17100,
42S17100
4216100
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g0424
Abstract: transistor B42 350
Text: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic
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bM2752S
uPD42S16170
uPD42S17170
uPD42S18170
475mil)
P32VF-100-475A
P32VF-100-475A
g0424
transistor B42 350
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Untitled
Abstract: No abstract text available
Text: bM27525 0042205 O ti HNECE MOS INTEGRATED CIR CU IT ¿ ¿ P D 4 2 S 1 6 8 0 0 ,4 2 S 1 7 8 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M ODE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16800 and /¿PD42S17800 are 2 097 152 words by 8 b it s dynamic CMOS RAM w ith o p tio n a l fa s t page mode.
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bM27525
PD42S16800
PD42S17800
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Untitled
Abstract: No abstract text available
Text: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N
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b427525
PD42S16160L,
PD42S17160L
/zPD42S18160L
P32VF-100-475A
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IC MARKING A60
Abstract: 7KD MARKING marking B44
Text: b42752S 00421flb 3fi7 M N E C E MOS INTEGRATED CIRCUIT /¿PD42 S 16400 L, 42 S 17400 L 16 M B IT D Y N A M IC RA M 3 .3 V F A S T P A G E M O D E PRELIM IN ARY IDESCRIPTIO N The NEC u PD42S16400L and u PD42S17400L are 4 194 304 words by 4 b its dynamic CMOS RAM
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b42752S
00421flb
uPD42S16400L
uPD42S17400L
PD42S16400L
PD42S17400L
//PD42S16400L)
b427525
004EbBL>
475mil)
IC MARKING A60
7KD MARKING
marking B44
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KF50
Abstract: No abstract text available
Text: b427525 D0H2243 c172 « N E Œ MOS INTEGRATED CIRCUIT , u P D 4 2 S 1 6 9 0 0 , 4 2 S 1 7 9 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M O DE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16900 and ¿¿PD42S17900 are 2 097 152 words by 9 b its dynamic CMOS RAM with optional fa s t page mode. CMOS sense anpl i f ier, peripheral c ir c u it s and 1 tra n s is to r
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b427525
D0H2243
uPD42S16900
uPD42S17900
PD42S16900)
475mil)
P32VF-100-475A
P32VF-100-475A
KF50
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UPD72069
Abstract: STP 4310 STP- 4310 upd72068 uPD7265 uPD765A uPD72064 UPD765B DDAM uPD72066
Text: CHAPTER 4. COMMANDS OUTLINE OF COMMAND OPERATION The FDC executes commands given from the main system in the following three phases. 1 Command Phase (C-Phase) The FDC, when in the idle state (command wait), receives commands and the parameters which specify
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bH27S25
UPD72069
STP 4310
STP- 4310
upd72068
uPD7265
uPD765A
uPD72064
UPD765B
DDAM
uPD72066
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Untitled
Abstract: No abstract text available
Text: DATA SHEET f MOS INTEGRATED CIRCUIT fiP D 4 2 S1 S1 6 0 ,4 21 6 16 0 ,4 2 S1 8 1 6 0 ,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The juPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynam ic CM OS RAMs.
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16-BIT,
juPD42S16160
42S18160,
42S18160
50-pin
42-pin
iPD42S16160,
/1PD42S16160
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