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    LIST OF N CHANNEL FET Search Results

    LIST OF N CHANNEL FET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    LIST OF N CHANNEL FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U402 N CHANNEL FET

    Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF LS627 FF627 400mW U402 N CHANNEL FET P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		PDF 100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent

    agilent n3300A

    Abstract: N3303
    Text: Programming Guide Agilent Technologies DC Electronic Loads Models N3300A, N3301A, N3302A, N3303A N3304A, N3305A, N3306A, and N3307A Part No. 5964-8198 Microfiche No 5964-8199 Printed in Malaysia March, 2002 Safety Summary The beginning of the electronic load User’s Guide has a Safety Summary page. Be sure you are familiar


    Original     		PDF N3300A, N3301A, N3302A, N3303A N3304A, N3305A, N3306A, N3307A N3307A agilent n3300A N3303

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor

    p channel depletion mosfet

    Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
    Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the


    Original     		PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    E1351-66201

    Abstract: HP DC POWER CONNECTOR E1411 list of n channel fet E1411B hp circuit diagram E1352-80001 E1301A
    Text: PDFINFO H5 5 2 0 - 0 1 32-Channel Single-Ended FET Multiplexer HP E1352A Technical Specifications ● ● ● ● Up to 13,000 channels/s scanning with HP’s DMMs 100,000 switches/second from downloaded scan list Voltage, current, and resistance measurements


    Original     		PDF 32-Channel E1352A E1352A E1351-66201 E1351A, E1353A, E1357A, E1358A. HP DC POWER CONNECTOR E1411 list of n channel fet E1411B hp circuit diagram E1352-80001 E1301A

    E1351-66201

    Abstract: list of n channel fet W01 fet P channel Junction FET E1326A E1351A 16 DIGITAL MULTIPLEXER E1411-80001
    Text: PDFINFO H5 5 8 6 - 0 1 16-Channel FET Multiplexer HP E1351A Technical Specifications ● ● ● ● Up to 13,000 channels/s scanning with HP’s DMMs 100,000 switches/second from downloaded scan list Voltage, current, and resistance measurements Space for signal conditioning components


    Original     		PDF 16-Channel E1351A E1351A E1351-66201 E1352A, E1353A, E1357A, E1358A. list of n channel fet W01 fet P channel Junction FET E1326A 16 DIGITAL MULTIPLEXER E1411-80001

    Project Report of fire alarm

    Abstract: CubeSuite
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 Project Report of fire alarm CubeSuite

    CBEA

    Abstract: x030f x0406 04068 cell broadband 00A1 PowerPC Architecture Book
    Text: Cell Broadband Engine Architecture Version 1.02 October 11, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corporation 2005, 2007 All Rights Reserved Printed in the United States of America October 2007


    Original     		PDF

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    Project Report of simple fire alarm

    Abstract: Project Report of fire alarm IIC0_MasterSendStart
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 Project Report of simple fire alarm Project Report of fire alarm IIC0_MasterSendStart

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6

    ultra low igss pA mosfet

    Abstract: J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor
    Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW GATE LEAKAGE IG = 15pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to +150 °C


    Original     		PDF LS846 LS843 350mW ultra low igss pA mosfet J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor

    transistor 2N4393

    Abstract: Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW


    Original     		PDF ID100 ID101 ID100 ID101 300mW transistor 2N4393 Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN

    zener sot-23 a9

    Abstract: JFET 50ma -40v jfet to 92 SST204
    Text: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures


    Original     		PDF J/SST201 350mW OT-23 zener sot-23 a9 JFET 50ma -40v jfet to 92 SST204

    VCR11N

    Abstract: fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511
    Text: VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF VCR11N VCR11N 300mW fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511

    transistor j511

    Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
    Text: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated


    Original     		PDF 360mW transistor j511 ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode

    2N6758

    Abstract: 2N6902 QPL-19500
    Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan     		PDF 2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500

    1N4148 SOT-23

    Abstract: r025f c12h diode IN5819 diode DIODE 1n5819 1n4148 sot IN58 diode AC/DC Electronic Load LR2OI0-O1-RO25F dc Electronic Load
    Text: T em ic SÌ786DB Semiconductors Si786 Demonstration Board Features • • • • 5- and 3.3-V Step-Down Synchronous Converters Less than 500-|lA Quiescent Current 25-^iA Shutdown Current 5.5-to 30-V Input Operating Range Power C o n v e rs io n The Si786 Dual-Output Power-Supply Controller for on-resistance n-channel FET used in switching power to


    OCR Scan     		PDF 786DB Si786 14-Mar-96 9140DB 9140CY 4435DY M-Mar-96 1N4148 SOT-23 r025f c12h diode IN5819 diode DIODE 1n5819 1n4148 sot IN58 diode AC/DC Electronic Load LR2OI0-O1-RO25F dc Electronic Load

    nec 1441

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT iuPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION ¿iPG172GV is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.


    OCR Scan     		PDF iuPG172GV iPG172GV IR35-00-3 WS60-00-1 nec 1441

    circuit diagrams retu 3.02

    Abstract: 34901A 34903A 34901a AGILENT RETU 3.02 F1047-80002 c300v Project Report of fire alarm using thermistor 34907A Rotary Switch 5 ways
    Text: User’s Guide A g ile n t o » ?* °# k q u W tlg « /S » llc* Unit innnnnn 1 Ü U U U U U P/UTilL fin 1 " ! • Ü Ü L .U • E î^ Ü J “ 1 “ Confljuf# — •'ho.W d 1 /¿S _ Coocrol_ « *•0 1 Mû» fifa * w r ^ r f Am n a» f to ' [m Ô Ô i


    OCR Scan     		PDF 4970A RS-232) circuit diagrams retu 3.02 34901A 34903A 34901a AGILENT RETU 3.02 F1047-80002 c300v Project Report of fire alarm using thermistor 34907A Rotary Switch 5 ways

    PU4702

    Abstract: PUB4702 MO-153-AD J 620 610 transistor
    Text: Panasonic Power Transistor Arrays F-M OS FETs PUB4702 Silicon N-Channel Power F-MOS (with built-in zener diode) • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive


    OCR Scan     		PDF PUB4702 74bbfi03 PU4702 PUB4702 MO-153-AD J 620 610 transistor