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    LINEAR ARRAY UNIT Search Results

    LINEAR ARRAY UNIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    LINEAR ARRAY UNIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E6572

    Abstract: E678-32B H7260-01 UV CATHODE TUBE H7260 H7260K R5900U-00-L16 R5900U-01-L16 R5900U-03-L16 R5900U-L16
    Text: LINEAR ARRAY MULTIANODE PMT AND ASSEMBLY R5900U-L16 SERIES, H7260 SERIES Multianode 16 Channel Linear Array R5900U-L16: PMT Multianode 32 Channel Linear Array (H7260: PMT ASSEMBLY) FEATURES ● High Cathode Sensitivity Luminous 250 µA/lm Typ. (-01 Type)


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    PDF R5900U-L16 H7260 R5900U-L16: H7260: TPMHB0700EA SE-171-41 E6572 E678-32B H7260-01 UV CATHODE TUBE H7260K R5900U-00-L16 R5900U-01-L16 R5900U-03-L16

    MLX75306

    Abstract: Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE
    Text: MLX75306 rd 3 Generation Linear Optical Array General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides


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    PDF MLX75306 MLX75306 ISO14001 Aug/12 Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE

    MLX75306

    Abstract: TZ12 640LSB CDF-AEC-Q100-002 SO16NB 8 bit LFSR for test pattern generation Melexis photodiode
    Text: MLX75306 3 Generation Linear Optical Array rd General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides


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    PDF MLX75306 MLX75306 ISO14001 May/10 TZ12 640LSB CDF-AEC-Q100-002 SO16NB 8 bit LFSR for test pattern generation Melexis photodiode

    Untitled

    Abstract: No abstract text available
    Text: LINEAR ARRAY MULTIANODE PMT ASSEMBLIES AND MODULES Photomultiplier Tube with Active Divider Circuit Linear Array Multianode PMT Assembly, 8-channel H9530 series / 16-channel(H10515B series) / 32-channel(H7260 series) FEATURES ● High Cathode Sensitivity


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    PDF H9530 16-channel H10515B 32-channel H7260 H11451 H11452 H11459

    TSL1401

    Abstract: No abstract text available
    Text: 400 dpi 128 x 1 Linear Array with Hold Applications/End Equipment Description The TSL1401 linear sensor array with hold consists of 128 x 1 array photodiodes, associated charge amplifier circuitry, and a pixel data-hold function that provides simultaneous integration start and stop times for all pixels. The pixels measure 63.5 µm H by 55 µm (W) with


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    PDF TSL1401

    Yaesu

    Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable


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    PDF PE4141 PE4141 Yaesu marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices

    PE4141

    Abstract: No abstract text available
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE4141 PE4141

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE4141 PE4141

    marking code 8 lead msop package analog devices

    Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
    Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance


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    PDF PE4141 PE4141 marking code 8 lead msop package analog devices marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking marking code 8 lead msop package

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G9201 G9204 SE-171 KMIR1012E04

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


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    PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    CDS light sensor

    Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G8050 G8053 SE-171 KMIR1009E04 CDS light sensor G8051 G8052 G8052-256D G8053-512D infrared cmos digital image

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


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    PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    G8053

    Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G8050 G8053 SE-171 KMIR1009E03 G8053-512R G8053-512S G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S

    C7557

    Abstract: C8061-01 C8062-01 G9201 G9202 G9203 G9203-256D G9204 G9204-512D
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G9201 G9204 SE-171 KMIR1012E02 C7557 C8061-01 C8062-01 G9202 G9203 G9203-256D G9204-512D

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


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    PDF G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G9201 G9204 SE-171 KMIR1012E01

    G9204

    Abstract: C7557 C8061-01 G9201 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G9201 G9204 SE-171 KMIR1012E05 C7557 C8061-01 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


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    PDF G9201 G9204 SE-171 KMIR1012E03

    detector ingaas

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


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    PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E09 detector ingaas

    Untitled

    Abstract: No abstract text available
    Text: ALA501 High-Voltage, Sem icustom Linear/D igital Array Description The ALA501 High-Voltage, Semicustom Linear/Digital Array is a versatile, smart-power IC consisting of user-configurable, high-voltage, linear devices and CMOS logic. Users can design their own proprietary


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    PDF ALA501 breakdow-7495, DS90-081HVIC DS89-116LBC)

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    Abstract: No abstract text available
    Text: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of


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    PDF ALA400/401 ALA400/401

    Untitled

    Abstract: No abstract text available
    Text: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology


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    PDF ALA400/401 51AL230240 D-8000 DS87-61LBC

    pnp 8 transistor array

    Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
    Text: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology


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    PDF ALA400/401 51AL230240 D-8000 DS87-61LBC pnp 8 transistor array ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET