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    LIGHT-SENSITIVE RESISTOR GAAS Search Results

    LIGHT-SENSITIVE RESISTOR GAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MM74C911N Rochester Electronics LLC LED Driver, 8-Segment, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-010, DIP-28 Visit Rochester Electronics LLC Buy
    Safety-Light-Curtain Renesas Electronics Corporation Safety Light Curtain Reference Design Visit Renesas Electronics Corporation
    ISL29020IROZ-EVALZ Renesas Electronics Corporation Low Power, High Sensitivity, Light-to Digital Sensor Evaluation Board Visit Renesas Electronics Corporation
    ISL76682AROZ-T7A Renesas Electronics Corporation Automotive Low Power, High Sensitivity, Light-to Digital Sensor With I²C Interface Visit Renesas Electronics Corporation
    ISL29020IROZ-T7 Renesas Electronics Corporation A Low Power, High Sensitivity, Light-to-Digital Sensor With I2C Interface Visit Renesas Electronics Corporation

    LIGHT-SENSITIVE RESISTOR GAAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


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    BPW34 application note

    Abstract: No abstract text available
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°


    Original     		PDF VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note

    bpw 75

    Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
    Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability


    Original     		PDF VSML3710 VEMT3700 VSML3710 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 bpw 75 near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note

    uv phototransistor

    Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
    Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200


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    BPW21R

    Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
    Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al


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    BPW34 application note

    Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
    Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be


    Original     		PDF 14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R

    Measurement Techniques

    Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
    Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		PDF 31-Jul-12 Measurement Techniques measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
    Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		PDF 27-Aug-08 BPW34 application note APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram

    near IR sensors with daylight filter

    Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
    Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original     		PDF w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector

    near IR sensors with daylight filter

    Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
    Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


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    Untitled

    Abstract: No abstract text available
    Text: Fiber Optic LAN Components Connectorized PIN Plus Preamplifier FEATURES • Prealigned LC SFF Connector sleeve • Data rates > 1GHz • PIN detector and preamplifier in a TO-46 heremtic package • 5V or 3.3V operation • GaAs PIN detector and BiCMOS preamplifier


    Original     		PDF HFD3180-002 HFD3180-002 850nm 25Gbps 622Mbps) 006697-1-EN

    Honeywell DBM 01

    Abstract: 100C HFD3180-102 HFD3381-102
    Text: Fiber Optic LAN Components Connectorized PIN Plus Preamplifier HFD3381-102 FEATURES • Prealigned SC Connector sleeve • Data rates from 622 Mbps to 2.5 Gbps • PIN detector and preamplifier in a TO-46 heremtic package • 3.3V operation • GaAs PIN detector and


    Original     		PDF HFD3381-102 HFD3381-102 850nm 006697-1-EN Honeywell DBM 01 100C HFD3180-102

    Honeywell DBM 01

    Abstract: HFD3180-102 HFD3381-002 HONEYWELL OPTOELECTRONICS
    Text: Fiber Optic LAN Components Connectorized PIN Plus Preamplifier HFD3381-002 FEATURES • Prealigned SC Connector sleeve • Data rates > 1GHz • PIN detector and preamplifier in a TO-46 heremtic package • 5V or 3.3V operation • GaAs PIN detector and BiCMOS preamplifier


    Original     		PDF HFD3381-002 HFD3381-002 850nm 25Gbps 622Mbps) 006697-1-EN Honeywell DBM 01 HFD3180-102 HONEYWELL OPTOELECTRONICS

    Honeywell DBM 01

    Abstract: hfd3180 HFD3180-102 100C
    Text: Fiber Optic LAN Components Connectorized PIN Plus Preamplifier FEATURES • Prealigned LC SFF Connector sleeve • Data rates from 622 Mbps to 2.5 Gbps • PIN detector and preamplifier in a TO-46 heremtic package • 3.3V operation • GaAs PIN detector and


    Original     		PDF HFD3180-102 HFD3180-102 850nm Honeywell DBM 01 hfd3180 100C

    phototransistor application lux meter

    Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF VEMT4700 VSML3710 VEMT4700 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 phototransistor application lux meter BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor

    fiber optic lan

    Abstract: No abstract text available
    Text: Fiber Optic LAN Components PIN Plus Preamplifier FEATURES • LC ROSA HFD6180-001 • SC ROSA HFD6380-001 • High performance GaAs PIN photodiode with separate transimpedance amplifier • Microwave Ceramic package capable of 20GHz • Data rates from DC to


    Original     		PDF HFD6180-001 HFD6380-001 20GHz HFD6X80-001 HFD6X80-001 10Gbps 006697-1-EN fiber optic lan

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


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    near IR sensors with daylight filter

    Abstract: light sensing circuit project BPW34 application note BPW20RF
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original     		PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original     		PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram

    long range Phototransistor Detector 880nm

    Abstract: IR Phototransistor Detector 880nm xenon linear flash lamps varistor xf 030 pnp phototransistor IR LED and photodiode heart rate optocoupler with schmitt trigger input h11c optocoupler Silicon bilateral switch phototransistor ultraviolet
    Text: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SY S T E M S Light, Irradiance and Effectiveness When the word “ light” is used in this discussion instead of “ electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part of the spectrum where silicon light


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    IR sensor LFN

    Abstract: lfn photodiode TUR varistor IR detector LFN IR LED and photodiode heart rate scr firing circuit schematic diagram using optocoupler led and phototransistor simple circuit Triacs form factors TRIACS EQUIVALENT LIST ge optoelectronics
    Text: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SYSTEMS Light, Irradiance and Effectiveness W hen the word “ light” is used in this discussion instead of ‘ ‘electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part o f the spectrum where silicon light


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    high speed Photointerrupter 6 pin

    Abstract: color sensitive PHOTO TRANSISTOR TLP1024 TLP1034
    Text: TLP1034 TO SHIBA TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1034 PRINTER, ELECTRONIC TYPEWRITER, FACAIMILE COPYING MACHINE, LATHER BEAMING PRINTER VCR, VIDEODISC, COMPACT DISC VARIOUS POSITION DETECTION TLP1034 is a digital output photointerrupter with an GaAs


    OCR Scan     		PDF TLP1034 TLP1034 TLP1024 high speed Photointerrupter 6 pin color sensitive PHOTO TRANSISTOR

    lita

    Abstract: No abstract text available
    Text: N E C 30E ELECTRONICS INC D • b4275S5 002=1621, b ■ PH O TO IN TERRU PTER PS5501LR-1 PHOTO IC IN T E R R U P T E R D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit : mm The PS5501LR-1 photo interrupter module is a <4.2: 0.2 GaAs Light Emitting Diode coupled to a Si m ono­


    OCR Scan     		PDF b4275S5 PS5501LR-1 PS5501LR-1 lita

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


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