720-LWG6SPCBEA5K8L1Z
Abstract: OHL02778
Text: 2011-05-12 Advanced Power TOPLED Datasheet LW G6SP released Advanced Power TOPLED features a compact package with a wide brightness range and high luminous efficiency. It completes the high-power product line with an outstanding lifetime of up to 50,000 hours.
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D-93055
720-LWG6SPCBEA5K8L1Z
OHL02778
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SSSB
Abstract: SSSS919800 T162 30N50N
Text: Slide Switch 5 H mm, 2mm-travel Type SSSS9 Series Mid-size general purpose type well established for user friendliness. Typical Specifications Detector Items Specifications Rating（max.）/（min.）（Resistive load） 0.1A 12V DC/1mA 5V DC Contact resistance（Initial performance/After lifetime）
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000cycles
000cycles
SSSB
SSSS919800
T162
30N50N
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APT54GA60B
Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT54GA60BD30
APT54GA60SD30
APT54GA60B
APT54GA60BD30
APT54GA60SD30
MIC4452
SD30
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APT36GA60B
Abstract: APT36GA60S MIC4452 c 1853
Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT36GA60B
APT36GA60S
APT36GA60B
APT36GA60S
MIC4452
c 1853
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Alphasense
Abstract: carbon monoxide sensor gas sensor no2 so2 sensor datasheet
Text: α S CO-AF Carbon Mono xide Sensor Monoxide PATENT PENDING Technical Specification Figure 1 CO-AF Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 CO-AF Specification PERFORMANCE * Sensitivity LIFETIME * Response time
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400ppm
400ppm
TDS/COAF/101
Alphasense
carbon monoxide sensor
gas sensor no2
so2 sensor datasheet
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APT28GA60BD15
Abstract: APT6017LLL MIC4452
Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60BD15
APT6017LLL
MIC4452
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Alphasense
Abstract: NO2-B1 no2 sensor so2 sensor datasheet gas sensor no2 SO2-BF nitrogen dioxide sensor
Text: α S NO2-B1 Nitrogen Dioxide Sensor PATENT PENDING Technical Specification Figure 1 NO2-B1 Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 NO2-B1 Specification PERFORMANCE * Sensitivity LIFETIME * Response time
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10ppm
10ppm
TDS/SO2BF/101
Alphasense
NO2-B1
no2 sensor
so2 sensor datasheet
gas sensor no2
SO2-BF
nitrogen dioxide sensor
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APT28GA60K
Abstract: MIC4452
Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60K
O-220
shift26)
APT28GA60K
MIC4452
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UMX4900
Abstract: UMX4000 UM4906 UM4000 UM4001 UM4002 UM4006 UM4010 UM4900 UM4900C
Text: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION KEY FEATURES ABSOLUTE MAXIMUM RATINGS AT 25º C UNLESS OTHERWISE SPECIFIED Package Condition UM4000 D • Carrier lifetime greater than 5 µs • Non cavity design
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UM4000
UM4900
UM4000
UMX4000,
UMX4900)
UMX4900
UMX4000
UM4906
UM4001
UM4002
UM4006
UM4010
UM4900
UM4900C
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SD15
Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT
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APT36GA60BD15
APT36GA60SD15
SD15
APT36GA60B
APT36GA60BD15
APT36GA60SD15
MIC4452
400v 20A ultra fast recovery diode
J750
1800g
TF328
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APT68GA60B
Abstract: APT68GA60S MIC4452
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT68GA60B
APT68GA60S
APT68GA60B
APT68GA60S
MIC4452
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Alphasense CO-BF
Abstract: carbon monoxide sensor gas sensor CO-bf Alphasense so2 sensor datasheet NDS specification 20000 co gas gas sensor no2 CO-BF
Text: α S CO-BF Carbon Monoxide Sensor PATENT PENDING Technical Specification Figure 1 CO-BF Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 CO-BF Specification PERFORMANCE * Sensitivity LIFETIME * Response time
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400ppm
400ppm
TDS/COBF/101
Alphasense CO-BF
carbon monoxide sensor
gas sensor CO-bf
Alphasense
so2 sensor datasheet
NDS specification 20000
co gas
gas sensor no2
CO-BF
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G200
Abstract: f 0952
Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
G200
f 0952
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APT10035LLL
Abstract: APT46GA90JD40 MIC4452 max4170
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
E145592
APT10035LLL
APT46GA90JD40
MIC4452
max4170
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Untitled
Abstract: No abstract text available
Text: GRUNDAUFBAU BASIC DESIGN Kenndaten / Characteristic data: Tastpunktabstand: Keypoint distance: Kontaktmaterial: Contact material: Prägung: Embossing: Betätigungskraft: Actuation force: Betätigungsweg: Actuation travel: Mindestlebensdauer: Lifetime min.:
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membrane key
Abstract: No abstract text available
Text: GRUNDAUFBAU BASIC DESIGN Kenndaten / Characteristic data: Tastpunktabstand: Keypoint distance: Kontaktmaterial: Contact material: Prägung: Embossing: Betätigungskraft: Actuation force: Betätigungsweg: Actuation travel: Mindestlebensdauer: Lifetime min.:
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silver ink
Abstract: No abstract text available
Text: GRUNDAUFBAU BASIC DESIGN Kenndaten / Characteristic data: Tastpunktabstand: Keypoint distance: Kontaktmaterial: Contact material: Betätigungskraft: Actuation force: Betätigungsweg: Actuation travel: Mindestlebensdauer: Lifetime min.: Max. Schaltspannung:
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DW01
Abstract: dw01 sot-23-6
Text: DW01+ One Cell Lithium-ion/Polymer Battery Protection IC General Description Ordering Information The DW01+ battery protection IC is designed to protect lithium-ion/polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell
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OT-23-6
700REF
DW01
dw01 sot-23-6
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103AT
Abstract: 30-PIN bq20z90 bq20z90DBT bq20z90DBTR BQ20Z90DBT-V150 BQ20Z90DBT-V150G4 bq29330 SLUA364 gas discharge Display theory
Text: bq20z90 www.ti.com SLUS778 – JULY 2007 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 FEATURES 1 • 2 • • • • • • • • • • • • • • • 2 Lifetime Data Logging 30-Pin TSSOP DBT
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bq20z90
SLUS778
bq29330
30-Pin
103AT
bq20z90DBT
bq20z90DBTR
BQ20Z90DBT-V150
BQ20Z90DBT-V150G4
SLUA364
gas discharge Display theory
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K2404
Abstract: No abstract text available
Text: H-IIF Series • Heavy metal Platinum: Pt introduced for lifetime control • Higher-speed diode built-in • High breakdown tolerance (high dv/dt) H H: High-Voltage Power MOSFET II: Series (Generation) F: FRD (Fast Recovery Diode) built-in H-IIF Series Built-in Diode trr and Breakdown Tolerance
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2SJ458/2SK
60V/500
K2404
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JJ SMD diode
Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package
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4-02W
Q62702-A1215
SCD-80
100MHz
JJ SMD diode
diode smd marking WP
smd diode marking JJ
6 pin smd diode
140KW
6402W
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KME AXIAL CAPACITORS
Abstract: kme series capacitors KME50T101M8X16LL KME Series xl 1507 KME50VB22RM5X11LL kme63t471m12x30ll KME50T4R7M5X12LL KME63T4R7M5X12LL KME16T471M8X20LL
Text: KME Series UNITED CHEMI-CON • Miniature ■ General Purpose ■ Solvent Proof ■ +105°C Maximum Temperature The KME series capacitors are our standard general purpose capacitors offered with radial or axial lead terminals for selected voltage and capacitance ranges. These capacitors have a rated lifetime of
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002CV
3VB102M10X12
KME16VB332M16X25
120Hz)
KME50VB1R0M5X11
KME50VB101M8X11
at120Hz)
16VB332M16X25
KME AXIAL CAPACITORS
kme series capacitors
KME50T101M8X16LL
KME Series
xl 1507
KME50VB22RM5X11LL
kme63t471m12x30ll
KME50T4R7M5X12LL
KME63T4R7M5X12LL
KME16T471M8X20LL
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LX400
Abstract: No abstract text available
Text: LXA/LX Series UNITED CHEMI-CON • Large Can ■ Screw Terminal ■ Long Life ■ High CV ■ High Ripple Current Ratings ■ +105°C Maximum Temperature The LXA/LX series capacitors are computer grade capacitors designed for a very long lifetime. These capacitors have a rated lifetime of 5,000 hours at 105°C with the rated ripple current applied. The
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000mF
250VDC
LXA250LG102T35X120
LX350LG682M
LX400LG222
LX450LG222M63X115
LX400
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panasonic ge series capacitors
Abstract: panasonic capacitors series ks
Text: Panasonic Aluminum E JsctoJytic C apacitois/K S A lm iium E fectiDÿti: C apaciDis Radial Le ad Type Japan Malaysia KS (Bi-polar) Type A (Radial Leads) style 04/JIS C 5141 Series: Bi-polar Ultra Miniature • Features • • Lifetime: 85 °C 1000 h 5 mm height
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04/JIS
1000h
panasonic ge series capacitors
panasonic capacitors series ks
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