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    APT36GA60S Search Results

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    APT36GA60S Price and Stock

    Microchip Technology Inc APT36GA60SD15

    IGBT PT 600V 65A D3PAK
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    DigiKey APT36GA60SD15 Tube 70
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    Avnet Americas APT36GA60SD15 Tube 26 Weeks 70
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    Mouser Electronics APT36GA60SD15 52
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    Newark APT36GA60SD15 Bulk 70
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    Microchip Technology Inc APT36GA60SD15
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    Onlinecomponents.com APT36GA60SD15
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    TME APT36GA60SD15 1
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    NAC APT36GA60SD15 Tube 48
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    Master Electronics APT36GA60SD15
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    APT36GA60S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT36GA60S Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original PDF
    APT36GA60SD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original PDF

    APT36GA60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT36GA60B

    Abstract: APT36GA60S MIC4452 c 1853
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S APT36GA60B APT36GA60S MIC4452 c 1853

    SD15

    Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 SD15 APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328

    439J

    Abstract: No abstract text available
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 APT36GA60SD15 439J

    Untitled

    Abstract: No abstract text available
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15

    Untitled

    Abstract: No abstract text available
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S

    400v 20A ultra fast recovery diode

    Abstract: No abstract text available
    Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT36GA60B APT36GA60S 400v 20A ultra fast recovery diode