MCM69T618
Abstract: R4000 RM5200 RM5271 RM7000 RM7000A RM7000B
Text: :29 :59 AM RM7000B Microprocessor with On-Chip Secondary Cache Data Sheet Preliminary Th ur sd ay ,0 8A ug us t, 2 00 2 06 RM7000B™ Data Sheet Proprietary and Confidential Preliminary Issue 3, March 2002 Do wn loa de db yt am er na bil of Si lic on Ex
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RM7000BTM
RM7000BTM
PMC-2010588,
RM7000B
RM7000B-450T
RM7000B-500T
MCM69T618
R4000
RM5200
RM5271
RM7000
RM7000A
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LIC AGENTS DATA
Abstract: RM5261 R4000 R4650 R5000 RM5200 RM5231 RM5261-250Q
Text: 06 :20 :48 AM RM5261 Microprocessor with 64-Bit System Bus Data Sheet Released on Th ur sd ay ,0 8A ug us t, 20 02 RM5261 Data Sheet Proprietary and Confidential Do wn loa de db yt am er na bil of Si lic on Ex pe rt RM5261™ Microprocessor with 64-Bit
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RM5261TM
64-Bit
RM5261
64-Bit
PMC-2002241,
LIC AGENTS DATA
RM5261
R4000
R4650
R5000
RM5200
RM5231
RM5261-250Q
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MS-022
Abstract: R4000 RM5200 RM5231
Text: 06 :14 :26 AM RM5231 Microprocessor with 32-Bit System Bus Data Sheet Released on Th ur sd ay ,0 8A ug us t, 20 02 RM5231 Data Sheet Proprietary and Confidential Do wn loa de db yt am er na bil of Si lic on Ex pe rt RM5231™ Microprocessor with 32-Bit
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RM5231TM
32-Bit
RM5231
32-Bit
PMC-2002165,
MS-022
R4000
RM5200
RM5231
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LIC AGENTS DATA
Abstract: RM5231A R4000 RM5200 lic policy
Text: :15 :32 AM RM5231A Microprocessor with 32-Bit System Bus Data Sheet Preliminary Th ur sd ay ,0 8A ug us t, 2 00 2 06 RM5231A Data Sheet Proprietary and Confidential Preliminary Issue 3, February 2002 Do wn loa de db yt am er na bil of Si lic on Ex pe rt
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RM5231ATM
32-Bit
RM5231A
32-Bit
PMC-2002174,
RM5231A
LIC AGENTS DATA
R4000
RM5200
lic policy
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R4000
Abstract: RM5200 RM5261A
Text: :17 :12 AM RM5261A Microprocessor with 64-Bit System Bus Data Sheet Preliminary on Th ur sd ay ,0 8A ug us t, 2 00 2 06 RM5261A Data Sheet Do wn loa de db yt am er na bil of Si lic on Ex pe rt RM5261A™ Microprocessor with 64-Bit System Bus Proprietary and Confidential
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RM5261ATM
64-Bit
RM5261A
64-Bit
PMC-2002240,
RM5261A
R4000
RM5200
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TRS-X
Abstract: No abstract text available
Text: SM5K3/SM5K4/SM5K5 SHARP Microcomputer Data Sheet 4-Bit Single-Chip Microcomputer FEATURES DESCRIPTION • 2,048 x 8-bits ROM C apacity The S M 5 K 3 /5 K 4 /5 K 5 are C M O S 4 -b it s in g le -c h ip m icrocom puters incorporating 4 -b it parallel processing
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36-Pin
32-Pin
30-Pin
28-Pin
10-bit
J63428
T98159
TRS-X
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SM5* sharp
Abstract: No abstract text available
Text: SHARP Microcomputer Data Sheet SM565 4-Bit Single-Chip Microcomputer FEATURES • Built-in C arrier O utput C ircuit fo r Rem ote C ontrol • 8,192 x 8-bits ROM C apacity • 256 x 4-bits RAM C apacity Including 64 x 4-bits D isplay RAM • 98 Instruction Sets
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SM565
100-pin
FP100-P
J63428
T98125
SM5* sharp
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PEm 0549
Abstract: No abstract text available
Text: SH A R P Data Sheet LH540235/45 2048 x 18 / 4096 x 18 Synchronous FIFOs FEATURES • Fast Cycle Times: 20/25/35 ns • Pin-Compatible Drop-In Replacements for IDT72235B/45B FIFOs • May be Cascaded for Increased Depth, or Paralleled for Increased Width •
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IDT72235B/45B
LH540235/45
36-Bit
J63428
PEm 0549
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RCA c30808
Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Text: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo sensitive Surface Areas 0.2 mm2 to 100 mm2
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3G30blQ
C30807,
C30808,
C30809
C30810,
C30822,
C30831
l-571
C30810
C30807
RCA c30808
TAG60
3G30
L568
C30822 photodiode
C30810
d28j
35XL
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Untitled
Abstract: No abstract text available
Text: Differential Line Receiver F e a tu r e s G e n e ra l D e sc r ip tio n • D ifferential in p u t range ± 2.3V • 1 5 0 M H z 3 dB b andw idth • 400 V //xs slew rate • ± 5V supplies or single supply • 50 m A m inim um o u tp u t current • O u tp u t sw ing 100ft load to
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EL2142C
100ft
EL2142C
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FDN336P
Abstract: SOIC-16
Text: N ovem ber 1998 FAIRCHILD S E M IC O N D U C T O R TM FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDN336P
FDN336P
SOIC-16
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LH0032
Abstract: No abstract text available
Text: -• ' hff.‘im w ic r a u ;os iNTrs'rrr;C'Ac:j:TS EL2006/E L 2006A High Gain Fast F E T Input Op Amp F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • • • 90 dB open loop gain 450 V/jiis slew rate 40 M Hz bandwidth No therm al tail 3 mV max input offset voltage
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EL2006/EL2006A
EL2006/E
EL2006/EL2006A
EL2006/
EL2006A
EL2006
LH0032
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transistor 632p
Abstract: 632p
Text: F A I R C H I L D M ICDNDUCTQ R Junel 996 tm NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS
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NDC632P
transistor 632p
632p
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A7830
Abstract: No abstract text available
Text: PAIRCHII-D March 1996 M ICDNDUCTQ R ! NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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NDC651N
A7830
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two way intercom
Abstract: No abstract text available
Text: ELH0041G/883/8508701ZX f l t a l r f W f HIGH PERFO RM AN CE ANALOG INTEGRATED CIRCUITS F e a tu r e s E L 0 » 1 H A t t l ß 4 1 G / 8 P O W ß T 8 O / 3 p C 8 5 T d 8 t l O 7 T 1 l d l Z A X m p l l f l C T G e n er a l D e sc r ip tio n • H igh output current— 200 m A
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G/883/8508701ZX
MIL-STD-883
ELH0041G/883B
MDP002
8508701ZX
ELH0041
LH0041
two way intercom
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Untitled
Abstract: No abstract text available
Text: ELH0041G/883/8508701ZX M M tß C HIGH PERFORMANCE ANALOG INTEGRATEDCIRCUITS E L H 0 0 4 1 G /8 8 3 /8 5 0 8 7 0 1 Z X 0*1 Ailtip POWßT OpBTdtlOTlttl A ltipllflC T F e a tu r e s G en era l D e sc r ip tio n • H ig h o u tp u t current— 200 mA • E xcellent open-loop
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ELH0041G/883/8508701ZX
ELH0041
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D October 1998 S E M I C O N D U C T O R tm FDS4435 Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDS4435
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Untitled
Abstract: No abstract text available
Text: LM H6739 LMH6739 Very Wideband, Low Distortion Triple Video Buffer Texa s In s t r u m e n t s Literature Number: SNOSAD2F Sem iconductor LM H 6739 V ery W ideband, Low D istortion T rip le V id e o B uffer General Description Features The LMH6739 is a very wideband, DC coupled monolithic se
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H6739
LMH6739
12-bit
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U410B
Abstract: DIODE BJE deutsch transistor smd bj
Text: Semiconductor N a tio n a l t u CLC420 High-Speed, Voltage Feedback Op Amp General Description Features T he C L C 4 2 0 is an o p e ra tio n a l a m p lifie r d e s ig n e d fo r a p p lic a tio n s re q u irin g m a tc h e d in p u ts , in te g ra tio n or
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CLC420
110OV/jas
U410B
DIODE BJE deutsch
transistor smd bj
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Untitled
Abstract: No abstract text available
Text: HGH PERFORMANCEanalog integrated circuits EL2004/EL2004C 350 MHz FET Buffer F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • The EL2004 is a very high-speed, F E T input buffer/line driver designed for unity gain applications a t both high current up to
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EL2004/EL2004C
EL2004
M2004
200mA
200nS
100mA
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Untitled
Abstract: No abstract text available
Text: LM X9830 LM X9830 Bluetooth Serial Port M odule T ex a s In s t r u m e n t s Literature Number: SNOSAUOA £/r Semiconductor LM X 9830 B luetooth D Serial Port M odule 1.0 General Description 3.0 Other Features The National Semiconductor LMX9830 Bluetooth Serial Port
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X9830
X9830
LMX9830
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Elantec High Performance Analog Integrated Circuits 1994 Elantec Inc
Abstract: No abstract text available
Text: élaatec HIGHPERFORHANCE ANALOG INTORATtO CIRCUITS EL4451C M r Wideband Variable-Gain Amplifier, Gain of 2 Ol F e a tu r e s G e n e r a l D e s c r ip t io n • Com plete variable-gain am plifier w ith o u tp u t am plifier, requires no ex tra com ponents
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EL4451C
EL4451C
Elantec High Performance Analog Integrated Circuits 1994 Elantec Inc
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74C914N
Abstract: No abstract text available
Text: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C914 Hex Schmitt Trigger with Extended Input Voltage General Description typ 0.0005V /°C at V qq = 10V . And the hysteresis, V j + - The M M 74C 914 is a m onolithic C M O S Hex S chm itt trig ge r
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MM74C914
MM74C914
74C914N
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SDB08B
Abstract: LME49990 eval SNOSB16B
Text: LM E 49990 LME49990 Overture E-Series Ultra-low Distortion, Ultra-low Noise Operational Amplifier T ex a s In s t r u m e n t s Literature Number: SNOSB16B Semiconductor Ultra-low Distortion, Ultra-low Noise Operational Am plifier General Description Key Specifications
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LME49990
SNOSB16B
SDB08B
LME49990 eval
SNOSB16B
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