Lemo
Abstract: No abstract text available
Text: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.
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LH537NXX
LH5S16P00DD
DIP42-M0Ö
Lemo
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LH537
Abstract: NAE03
Text: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.
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LH537Nxx
LHS316P00DN
SGP44-P-600
M1050
K01SS
CY648
LH537
NAE03
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jwu17
Abstract: No abstract text available
Text: I P. 24 88. 08. 29. * 17 î17 SHLARP SPEC Ko. E L Q 8 6 1 Q 2 I S S g I: Jwu 17 1396 To - , S P E C I F I CAT I ONS Product Type 16M MAS K ROM LH537NXX Kode I Wo. (L H 5 3 1 6 P Q 0 DP ) ^ Hi is spécifications contains 12 pagfrg including; the cover and appendix.
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LH537NXX
DIP42-M0Ö
jwu17
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Untitled
Abstract: No abstract text available
Text: SHARP SPEC No. E L 0 8 6 1 0 0 I S S UE: Jun. 1 1996 To ; S P E C I F I C A T I O N S p ro d u ct Type 1 6M MASK ROM LH537Nxx I o d e l No._ L H 5 3 1 6 P 0 ODN JKThis specifications contains 14 pages including the cover acid appendix If you have any objections, please contact us before issuing purchasing order.
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LH537Nxx
LHS316P00DN
SGP44-P-600
M1050
K01SS
CY648
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lh5s4
Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.
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LH531000BN-S
LH53V2P00AN/AT
LH53V4P00N/T
LH53V8500N/T
LH53V16500AN/AT
LH53V32500AN-2
LH53V32500AT-2
LH53V64P00T
LH53V64POON
LH53V12800T
lh5s4
lh537
48-TSOP
LH5s
42-DIP
48TSOP1
LH5364P00D
LH538
LH5S46
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lh537
Abstract: 42DIP lh533200 LH535g
Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H
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LH-538VXX
LH-5387XX
LH-538NXX
32DIP/32SOP/32TSOP
32DIP/32SOP/
32TSOP
42DIP/44SOP
48TSOP0)
lh537
42DIP
lh533200
LH535g
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cey marking code
Abstract: 816P
Text: SHARP L H 5 3 1 6 P 0 ODD C O N T E N T S 1. General Description P2 2. Features P2 3. Block Diagraa P3 4. Pin Connections P4 5. Pin Description P4 6. Absolute ïaiinna Ratings PS 7. Opwatine Sanges P5 S. B.C. Electrical Characteristics P5 9. À.C. Electrical Characteristics
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LH6316POODD
LH53TNxx
CLH5315PQ0DD)
16-bit
001713fl
LH5S16
54TYP.
24TTP.
DIP42-Ã
616D7T6
cey marking code
816P
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lh5s4
Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T
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LH53V4T00E
LH53V4ROOAN/AT
LH53V4R00N/T
LH53V4YG0N/E
LH53H4100D/N
LH534700D/N
LH534R00BD/BN
LH53V4B00T
LH534A00T
LH534BOOT
lh5s4
LH537
lh5s4p
lh5s4R
lh5s46
LH538
44SOP
lh533200
LH5s
5g85
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