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    LH52252AD Search Results

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    LH52252AD Price and Stock

    Sharp Microelectronics of the Americas LH52252AD-45

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    Bristol Electronics LH52252AD-45 94
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    Quest Components LH52252AD-45 20
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    Component Electronics, Inc LH52252AD-45 160
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    LH52252AD Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH52252AD-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH52252AD-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH52252AD-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    LH52252AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


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    PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    PDF LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    PDF LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl

    LH52252AD-35

    Abstract: LH52252A LH52252 LH52252AD
    Text: LH52252A FEATURES • Fast Access Times: 25/35/45 ns • Low Power Standby When Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • Common I/O for Low Pin Count • JEDEC Standard Pinouts • Packages: 24-Pin, 300-mil DIP


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    PDF LH52252A 24-Pin, 300-mil LH52252AD-35 LH52252 LH52252AD

    LH52252A

    Abstract: LH52252
    Text: LH52252A FEATURES • Low Power Standby When Deselected • TTL Compatible I/O • 5 V ± 1 0 % Supply • Fully Static Operation • Common I/O for Low Pin Count • JEDEC Standard Pinouts • Packages: 24-Pin, 300-mil DIP 24-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


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    PDF LH52252A 24-Pin, 300-mil LH52252A 24-Din. DIP24-P-300) LH52252

    LH52252-35

    Abstract: LH52252-45 MB81C84-55 AK35 MB81C84-45 LH52255-35 LH52255-45 65536x4 LH52252AD MB81C84A-35
    Text: - I I o - 2 5 6 K m A 4 ì&fógH £ í± « CC TAAC max ns) TCAC max (ns) TOE max (ns) CMOS 7 TOH •in (ns) f y TOD max (ns) S t a t i c ?' TWP min (ns) if FAM (6 5 5 3 6 x 4 ) lì TDS min (ns) TDH min (ns) TWD min (ns) TWR max ins) V D D or V C C (V) 24PIN


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    PDF 65536x4) LH52252-35 LH52252-45 LH52252AD/AK-Z5 LH52252AD/AK-35 LH52255AD/AK-25 LH52255AD/AK-35 LHS2255AD/AK-45 MB81C84--45 MB81C84-55 AK35 MB81C84-45 LH52255-35 LH52255-45 65536x4 LH52252AD MB81C84A-35

    LH52252A

    Abstract: No abstract text available
    Text: CMOS 64K x 4 Static RAM FEATURES • Fast Access Times: 25/35/45 ns • Standard 24-Pin, 300-mil DIP • Space Saving 24-Pin, 300-mil SOJ • JEDEC Standard Pinouts • Low Power Standby When Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation


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    PDF 24-Pin, 300-mil LH52252A LH52252A 24-Din. DIP24-P-300Ì

    lh52252a

    Abstract: No abstract text available
    Text: CMOS 64K x 4 Static RAM FEATURES • Fast Access Times: 25/35/45 ns • Low-Power Standby When Deselected Read cycles occur when E is LOW and W is HIGH. A Read cycle wij|_begin upon an addressjransition, on a telling edge of E, or on a rising edge of W. • Fully-Static Operation


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    PDF 24-Pin, 300-mil 24-PIN LH52252A LH52252A 24-oin.