LH51V2008
Abstract: 32-PIN
Text: PRODUCT INFORMATION LH51V2008 2M SRAM Integrated Circuits Group APPLICATIONS: Pager PDA Set Top Box Cellular Phone 32-PIN TSOP PINOUT 32-PIN TSOP FEATURES • Access time 85 ns MAX. • Operating current – 40 mA (MAX.) – 5 mA (MAX. tRC, tWC = 1 µs)
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LH51V2008
32-PIN
TSOP32-P-0813)
51BV2008-2
MS-J10105D;
SMT98210
LH51V2008
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icz1
Abstract: No abstract text available
Text: LH51V2008HS-85LL 2 M S R A M Model No.: LHSV282S Spec No.: MS-J10706 Issue Date: July 8, 1998 SHARP LHSV282S # Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited
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LH51V2008HS-85LL
LHSV282S)
MS-J10706
LHSV282S
icz1
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LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
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109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
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IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
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ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
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Untitled
Abstract: No abstract text available
Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)
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24SOP
LH5116SN
LH5164AVN/AVT
LH5164AV3HN
LH5164AVHN/AVHT
LH5164AST
LH5164ASHN/ASHT
LH51V256N/T-85SL
LH51V256HN/HT-85SL
LH52CV256N/T-10LL
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LH521007AK-20
Abstract: No abstract text available
Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.
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LH5116SN
LH5164AVN/AVT
LH5164AV3HN
24SOP
28S0P/28TS0P
LH5268A/AN/AD-1
52256C
-70LIÆ
710LL
LH521007AK-20
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operating
Abstract: LH52E1000
Text: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V
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LH5116S
LH5164AV
LH5164AV3H
LH5164AVH
LH5164AS
LH5164ASH
LH51V256
LH51V256H
LH52E1000
LH51V1016CJ
operating
LH52E1000
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Untitled
Abstract: No abstract text available
Text: L H 5 1 V 2 8 J S - 2M SRAM Model No.: LHSV286S Spec No.: MS-J10707 Issue Date: July 9, 1998 8 5 L L SHARP LHSV286S # Handle this document ca re fu lly for it contains material protected by international copyright law. Any reproduction, fu ll or in part, of this material is prohibited
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LHSV286S)
MS-J10707
LHSV286S
LH51V2008JS
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