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    LG SMD TRANSISTOR Search Results

    LG SMD TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    LG SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor LY

    Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
    Text: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)


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    PDF 2SC2712 OT-23 smd transistor LY lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG

    smd marking ly

    Abstract: hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA max . Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max).


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    PDF 2SC4116 100mA, smd marking ly hFE CLASSIFICATION Marking 2SC4116 marking LG -sot23 -led SMD LY smd ic marking LY

    lg smd transistor LF

    Abstract: lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF
    Text: Transistors SMD Type NPN Transistor 2SC3052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Power dissipation :PC=0.15W 0.55 Collector current :IC=0.2A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    PDF 2SC3052 OT-23 100mA lg smd transistor LF lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF

    smd ss 7 transistor

    Abstract: SMD TRANSISTOR j11
    Text: Application Note 1946 ISL78268EVAL1Z Evaluation Board User Guide Introduction Key Features ISL78268 is an automotive grade synchronous buck controller with the 2-A sourcing/3-A sinking Integrated MOSFET Drivers. The device supports the wide input supply voltage range of 5V


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    PDF ISL78268EVAL1Z ISL78268 ISL78268, ISL78268. 100ms/DIV 20ms/DIV AN1946 smd ss 7 transistor SMD TRANSISTOR j11

    transistor smd ALG

    Abstract: transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg
    Text: • bbSBIBl OOSSAbb blfl ■ APX N AMER PHILIPS/DISCRETE PM BT3906 b?E D 7V SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature SMD plastic envelope intended for surface mounted applications. The PMBT3906 is primarily intended for use in telephony and professional communication equipment.


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    PDF BT3906 PMBT3906 transistor smd ALG transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg

    Untitled

    Abstract: No abstract text available
    Text: 711Dfi2b D D b ' m i 710 • PHIN PZTA92 PZTA93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature SMD envelope SOT-223 . They are primarily intended for use in telephony and professional communication equipment. QUICK REFERENCE DATA Collector-base voltage (open emitter)


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    PDF 711Dfi2b PZTA92 PZTA93 OT-223)

    BUK204-50Y

    Abstract: 100-P BUK200-50Y SMD RNA
    Text: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK200-50Y DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount envelope, configured as a single


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    PDF BUK204-50Y BUK200-50Y OT426 BUK204-50Y 100-P BUK200-50Y SMD RNA

    Untitled

    Abstract: No abstract text available
    Text: PZTA92 PZTA93 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD package SOT-223 . They are prim arily intended fo r use in telephony and professional comm unication equipment.


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    PDF PZTA92 PZTA93 OT-223) OT-223

    IGE smd

    Abstract: smd transistor LL lg smd transistor BUK203-50Y BUK207-50Y smd lg diode vbg transistor switch smd
    Text: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK203-50Y BUK207-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYM BOL


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    PDF BUK203-50Y BUK207-50Y OT426 IGE smd smd transistor LL lg smd transistor BUK203-50Y BUK207-50Y smd lg diode vbg transistor switch smd

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.


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    PDF 002b0D3 PZT3904 OT-223)

    Untitled

    Abstract: No abstract text available
    Text: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA


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    PDF PZT3906 OT-223) 25rom

    PZTA42

    Abstract: PZTA43
    Text: •i bbsa^ai a o E b a m ^s t « a p x N AMER PHILIPS/DISCRETE PZTA42 PZTA43 b7E D SILICON EPITAXIAL TRANSISTORS NPN transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.


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    PDF PZTA42 PZTA43 OT-223) PZTA42 PZTA43

    smd transistor kn

    Abstract: TRANSISTOR SMD KN transistor SMD 624
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y BUK207-50Y For maintenance only. Do not use for design-in. DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a


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    PDF BUK203-50Y BUK207-50Y smd transistor kn TRANSISTOR SMD KN transistor SMD 624

    smd transistor LY

    Abstract: BUK202-50Y BUK206-50Y switch smd
    Text: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50Y BUK206-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYMBOL


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    PDF BUK202-50Y BUK206-50Y OT426 smd transistor LY BUK202-50Y BUK206-50Y switch smd

    p1g SMD

    Abstract: MARKING CODE SMD IC ic smd 342 PMBTA05 PMBTA06 SMD MARKING CODE jt sot23 marking code
    Text: • bb53T31 N AMER 0025007 3 42 H A P X PHILIPS/DISCRETE b ?E PMBTA05 PMBTA06 1> y v SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a m icro m in ia tu re SMD plastic envelope intended fo r surface m ounted applications. T hey are p rim a rily intended fo r use in te le p h o n y and professional co m m u n ica tio n e q uipm ent.


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    PDF bb53T31 PMBTA05 PMBTA06 100/l/A p1g SMD MARKING CODE SMD IC ic smd 342 PMBTA06 SMD MARKING CODE jt sot23 marking code

    Untitled

    Abstract: No abstract text available
    Text: Vlioast. ODbTTbS HPHIN PZT2907 PZT2907A SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed switching and driver applications. ~v CBO max. 60 V I I < < o o m m O O


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    PDF PZT2907 PZT2907A OT-223)

    lg smd transistor

    Abstract: TMB-05
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50X DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount envelope, configured as a single


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    PDF BUK203-50X BUK207-50X lg smd transistor TMB-05

    5g smd transistor

    Abstract: transistor 5d smd smd transistor 3U
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


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    PDF BUK203-50Y BUK207-50Y BUK207-50Y 5g smd transistor transistor 5d smd smd transistor 3U

    BUK205-50Y

    Abstract: BUK201-50Y buk201
    Text: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYMBOL


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    PDF BUK201-50Y BUK205-50Y OT426 BUK205-50Y BUK201-50Y buk201

    smd transistor LY

    Abstract: BUK206-50X SOT426 BUK202-50X
    Text: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATA SYM BOL PARAMETER II Nominal load current ISO SYM BOL PARAMETER Monolithic temperature and overload protected power switch based on MOSFET technology in a


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    PDF BUK202-50X BUK206-50X OT426 smd transistor LY BUK206-50X SOT426 BUK202-50X

    smd transistor 2t1

    Abstract: smd 3b5 PZT2907 transistor 3b5 smd PZT2907A t45 sot
    Text: • bbS3T31 GÜ25Iîcn T45 « A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SMD envelope SO T-223 . Designed prim arily fo r high-speed switching and driver applications.


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    PDF bbS3131 PZT2907 PZT2907A OT-223) OT-223 smd transistor 2t1 smd 3b5 PZT2907 transistor 3b5 smd PZT2907A t45 sot

    SMD diode sg 46

    Abstract: BUK201-50X BUK205-50X TOPFET high side switch 5 PIN
    Text: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATA SYM BOL PARAMETER II Nominal load current ISO SYM BOL PARAMETER Monolithic temperature and overload protected power switch based on MOSFET technology in a


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    PDF BUK205-50X BUK201-50X wiBUK205-50X OT426 SMD diode sg 46 BUK201-50X BUK205-50X TOPFET high side switch 5 PIN

    smd transistor bq

    Abstract: smd transistor H F BQ 20 smd transistor buk202-50y
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK202-50Y QUICK REFERENCE DATA SYMBOL PARAMETER •l Nominal load current ISO SYMBOL PARAMETER APPLICATIONS Continuous off-state supply voltage Continuous load current Continuous junction temperature


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    PDF BUK202-50Y BUK206-50Y smd transistor bq smd transistor H F BQ 20 smd transistor buk202-50y

    2c550

    Abstract: smd 419 transistor
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DESCRIPTION BUK205-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


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    PDF BUK201-50Y BUK205-50Y 2c550 smd 419 transistor