LG 631 TV LG
Abstract: 5N5OUT Tv tuner Diagram LG RF tuner LG lg innotek tuner LG 631 IC fm radio pcb LG Innotek tv lg LG 631
Text: LG Innotek Multi Media Tuner NTSC M/N JPN & FM Radio 2004/03/08 Preliminary specification TAPE-H091F 1 LG Innotek Preliminary specification Multi Media Tuner NTSC M/N(JPN) & FM Radio TAPE-H091F FEATURES Systems NTSC M/N(JPN) & FM Radio Stereo True 5V device (low power dissipation)
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TAPE-H091F
25MHz)
LG 631 TV LG
5N5OUT
Tv tuner Diagram LG RF
tuner LG
lg innotek tuner
LG 631 IC
fm radio pcb
LG Innotek
tv lg
LG 631
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS LG [ For 105°C, 2000 Hours General ] Large Can Aluminum Electrolytic Capacitors For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS
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100VDC
82000F
120Hz,
20m/m,
120Hz)
120Hz
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YAGEO LG
Abstract: No abstract text available
Text: Yageo corporation ALUMINUM electrolytic capacitors Large Can Aluminum Electrolytic Capacitors LG [ For 105°C, 2000 Hours General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS
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100VDC
120Hz)
450VDC
20m/m,
YAGEO LG
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LH yageo
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS Large Can Aluminum Electrolytic Capacitors LG [ For General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature Range -40 to +105°C
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100VDC
450VDC
82000F
2200F
120Hz,
20m/m,
120Hz
LH yageo
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1d1107
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS Large Can Aluminum Electrolytic Capacitors LG [ For General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature Range -40 to +105°C
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100VDC
82000F
120Hz,
20m/m,
CURR45
120Hz
1d1107
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LM3661TL-1.25
Abstract: No abstract text available
Text: YAGEO CORPORATION ELECTROLYTIC CAPACITORS Large Can Aluminum Electrolytic Capacitors LG [ For General ] For Printed Circuit Board High-Performance Aluminum Electrolytic Power Supply Input and Output Filter Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature Range -40 to +105°C
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100VDC
82000F
120Hz,
20m/m,
CURR45
120Hz
LM3661TL-1.25
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am29203 "evaluation board"
Abstract: L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration 30GRAMMABLE
Text: PROGRAMMABLE ’ROGRAMMABLE 30GRAMMABLE L DGRAMMABLE LG 3RAMMABLE LOG ÏRAMMABLE LOGI ÌAMMABLE LÄGIC a Advanced Micro Devices Programmable Array Logic Handbook Prepared by the Product Planning and Applications Staff at Advanced M icro Devices, Inc. Brad Kitson, Editor
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30GRAMMABLE
I-20090
S-172
am29203 "evaluation board"
L0512
MV8000
TTL catalog
CL1101
8038 ic tester circuit diagram
tl 2345 ml
gcr encoder
parallel bus arbitration
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4Mx64
Abstract: SG 97 DIMM 72 pin out GMM7642147
Text: LG Semicon PRODUCT INDEX • 8MByte DRAM MODULES 168 pin DIMM GMM7641000CS/SG 1M x 64 Bit, 5V, 1K Ref., FPM - 37 GMM7641000CT/TG 1M x 64 Bit, 5V, 1K Ref., FPM - 46 GMM7641010CS/SG 1M x 64 Bit, 5V, 1K Ref., EDO - 55
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GMM7641000CS/SG
GMM7641000CT/TG
GMM7641010CS/SG
GMM7641010CT/TG
GMM7641200CS/SG
GMM7641200CT/TG
GMM7641210CS/SG
GMM7641210CT/TG
GMM7641013CS/SG
GMM7641043CS/SG
4Mx64
SG 97
DIMM 72 pin out
GMM7642147
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LG 631 IC
Abstract: ic lg 631
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C64000FW high performance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure
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GM23C64000FW
120/150ns.
44SOP,
A0-A21
015/A-l
Xi-270)
4QEfl757
LG 631 IC
ic lg 631
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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LED LR 3330
Abstract: 5464L K389-F 5420-R MP 3369 3360d u260e
Text: LED Lamps LED Lamps Package 4 Typo Package OuUine SMT-SOT23 SMT-SOT23 MULTILED n Part Number C olor Lena XPeak nra LS S260-D0 Superred Red diffused 635 LY S260-D0 Yellow Yellow diffused 586 LG S260-D0 Green Green diffused 565 LU S2S0-DO Superred/ green Colorless
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S260-D0
SMT-SOT23
S260-D0
SMT-SOT23
S269-BO
S269-B0
S269-BO
K370-LO
LED LR 3330
5464L
K389-F
5420-R
MP 3369
3360d
u260e
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yx 861
Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE
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NE76084S
NE76064S
NE76084S
test1342
NE76084-T1
yx 861
yx 801
BUH 508
VAUC
GT 1083
NE76083A
L to Ku Band Low Noise GaAs MESFET
x band GaAs MESFET 261
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Untitled
Abstract: No abstract text available
Text: ~ LG Semicon Co., Ltd. G WM7734113CSG-6/7 4 , 1 9 4 ,3 0 4 w o r d s x 7 2 b i t CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7734113CSG is an 4M x 72 bits EDO Dynamic RAM MODULE which is assembled 18 pieces of 4M x 4bit EDO DRAMs in 24/26 pin SOJ package, one 2K
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GMM7734113CSG
7734113CSO
7734113C
WM7734113CSG-6/7
GMM7734113CSG
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Untitled
Abstract: No abstract text available
Text: , ^ o ^ LG Semicon Co.,Ltd. Description The G M M 73640 00B S /S G is a 4M x 36 bits D ynam ic R A M M O D U LK w hich is assem bled 36 pieces o f 4M x lb it D R A M s in 20/26 pm SOJ package o n the printed circuit board. T his m odule can be as well used as 8M x 18 bits D ynam ic R A M
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GMM7364000BS/SG-60/70/80
7364000B
C3C3C3C3C30
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NJU6319
Abstract: NJU6319A NJU6319B NJU6319C NJU6319D NJU6319P NJU6319XC NJU6319XE NJU6319XR
Text: N JU 6 3 1 9 * > y - X I c Ift NJU6319VU-X" li, 50MHz £ T? 3g Jg W m m m j 'j f , fl- js s g a m ^ x T - M ' m & ?k H fill fflC-MOS x m ic t ¥ ?% r n z t it it o BSi iiffittf*eif-r?S6«Rri!iT*fcy, » { E«E4.3V*ti£fc U - o X NJU6319XC 1/23» j a t l ^ b » F o , Fo/2, Fo/4 S.t;Fo /8 |iJ*tt|*lg|5 !iig ig l c
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NJU6319*
NJU6319XC
NJU6319XE
NJU6319XR
50MHz
LSTTL10
NJU6319A
NJU6319B
NJU6319C
NJU6319D
NJU6319
NJU6319P
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2N3724
Abstract: 2N3725 2n3725a transistor 2N3725
Text: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors
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2N3724
2N3725
2N3725A
2N3724,
2N3725,
2N3725A
2N3724
Dissipation00MHz
transistor 2N3725
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CM2894A
Abstract: No abstract text available
Text: Datasheet CM2894A w Q M h C I 1 S e m ic o n d u c t o r C o rp . PNP SILICON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION
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cm2894a
to-18
CM2894A
100MHz
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PN4356
Abstract: PN4355 PN4354
Text: Datasheet PN4354 PN4355 PN4356 Central K ilH l • Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors
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PN4354
PN4355
PN4356
PN4354
PN4356
100/iA
100mA
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TIP140
Abstract: TIP142 TIP146 TIP142 TIP147 TIP141 TIP145 TIP147 tip 147
Text: Datasheet H C o n tM l TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP tm SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers of World Class Discrete Semiconductors
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TIP140
TIP141
TIP142
TIP145
TIP146
O-218
TIP140,
TIP142 TIP147
TIP147
tip 147
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2N2221A
Abstract: 2N2222A NPN transistor 2n2221a 2n2222a central
Text: Data Sheet Central" 2N2221A 2N2222A S em ico n d u cto r Corp. NPN SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:
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2N2221A
2N2222A
2N2221A,
2N2222A
150mA,
NPN transistor 2n2221a
2n2222a central
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CMXT2222A
Abstract: NPN transistor marking NY
Text: Data Sheet Central' CMXT2222A Sem iconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:
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CMXT2222A
OT-26
CMXT2222A
150mA,
OT-26
NPN transistor marking NY
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BSX59
Abstract: BSX60 BSX61 TO-39 CASE 435-1824
Text: Bata Sheet BSX59 BSX60 BSX61 S e llllC D Iia U C IO i G O fp. NPN SILICON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSX59 series types are NPN Silicon Transistors designed for high speed switching
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BSX59
BSX60
BSX61
BSX59
BSX60
BSX61
TO-39 CASE
435-1824
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2N2222 npn
Abstract: LB 122 NPN TRANSISTOR 2N2221 LB 122 transistor 2n2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor 2N2222 hfe 2N2221-2N2222
Text: Data Sheet Central 2N2221 2N2222 Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221, 2N2222 types are Silicon NPN Planar Epitaxial Transistors
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2N2221
2N2222
2N2221,
2N2222
150mA,
500mA,
150mA
500mA
100MHz
2N2222 npn
LB 122 NPN TRANSISTOR
LB 122 transistor
npn 2n2222 transistor
2n2222 npn transistor general purpose
2n2222 npn switching transistor
2N2222 hfe
2N2221-2N2222
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LG 631 IC
Abstract: 2N3634 2N3635 I2406 ic lg 631
Text: Data Sheet Central 2N3634 2N3635 Sem iconductor Corp. PNP SILIC O N TR A N SIST O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED E C TO-39 C A S E Manufacturers of World Class Discrete Semiconductors DESCRIPTION
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2N3634
2N3635
2N3635
150mA
100MHz
LG 631 IC
I2406
ic lg 631
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