C27-C36
Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
Text: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#
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PAGE45
PAGE47
6870BE
C27-C36
TP5000
M1535 a1
RS200M
TP4506
TP5056
TP4721
TP5860
J5027
TP4456
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Text: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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3TP4715
TP4716
5TP4717
TP4718
7TP4719
TP4720
9TP4721
TP4722
TP4728
TP4729
TP5000
TP5056
TP4506
TP5351
TP5046
TP4656
TP4650
TP4780
TP5006
TP5299
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Text: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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TP4698
TP4699
TP4700
TP4701
TP4702
TP4703
TP4658
TP4659
TP4660
TP4661
TP4506
TP5000
AR803
TP6244
thermistor SCK D54
TP5056
R767
TP5310
TP6311
TP4765
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CD75323
Abstract: cd75232 R88D XMLF lg crt tv circuit diagram cd7523 lg 29" crt tv circuit diagram GM6486 GD75232L zp5a
Text: @ LG Semicon. Co., LTD. GD75232lGD75323 EIA RS-232-D INTERFACE 1 CHIP IC Description Block Diagram The GD75232 is a monolithic device containing 3 independent drivers and 5 receivers, and the GD75323 is a monolithic device containing 5 independent drivers and 3 receivers. These are
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RS-232-D
GD75232
GD75323
EIA-232-D.
GD75232lGD75323
EIA-232-D
RS-232-C)
CD75323
cd75232
R88D
XMLF
lg crt tv circuit diagram
cd7523
lg 29" crt tv circuit diagram
GM6486
GD75232L
zp5a
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J307
Abstract: transistor j307 A3049 CA3049T CA3102 equivalent CA3049
Text: •A3049, CA3102 CO^ ca" OÏ a 'v * e v t'“ Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz DecaTlßer 1998 Features Description • Power Gain 23dB T y p . 200MHz The CA3049T and CA3102 consist of two independent
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A3049,
CA3102
500MHz
CA3049T
CA3102
500MHz.
J307
transistor j307
A3049
CA3102 equivalent
CA3049
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Untitled
Abstract: No abstract text available
Text: CA3146, CA3146A, CA3183, CA3183A HARRIS S E M I C O N D U C T O R August 1996 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors - V qe M atch. ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)
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CA3146,
CA3146A,
CA3183,
CA3183A
120MHz
CA3146A)
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PT4572A
Abstract: TO-117A az4v pt45
Text: nOTOROLA SC XSTRS/R F 4bE D • b3b7554 00^5132 M ■ MOTb T -2 S -Û 5 MOTOROLA ■i SEM ICONDUCTOR ■ TECHNICAL DATA PT45/2A The RF Line NPN Silicon High Frequency Transistor lc = zoo mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for broadband class A applications requiring high output, low distortion
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b3b7554
PT45/2A
244D-01.
O-117A)
PT4572A
TO-117A
az4v
pt45
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Untitled
Abstract: No abstract text available
Text: h a r CA3049,J CA3102 ® S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz N o vem b er 1996 Features Description • Power Gain 23dB T y p . 200MHz T he C A 3 0 4 9 T and C A 3 10 2 co n sist o f tw o in de pen de nt
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CA3049,
CA3102
500MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: Symbol Value Unit Collector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 40 Vdc Em itter-Base Voltage Vebo 4.0 Vdc Rating ic 50 m Adc PD 350 2.8 mW m W ,5C TJ- Tstg - 5 5 to +135 3C Symbol Max Unit R&j a 357 CC:W Collector C urrent — C ontinuous
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MPSH24
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0 258 007 033
Abstract: Transistor 2274
Text: MPS536 CASE 29-04, STYLE 2 TO-92 TO-226AA M A XIM U M RATINGS Symbol MPS536 Unit Collector-Emitter Voltage VCEO -1 0 Vdc Collector-Base Voltage VCBO -1 5 Vdc Vdc Rating Emitter-Base Voltage HIGH FREQUENCY TRANSISTOR Ve b o -4 .5 Collector Current — Continuous
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MPS536
O-226AA)
MPS536
0 258 007 033
Transistor 2274
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vk200* FERROXCUBE
Abstract: MRF571
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA
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MRF571
VK-200,
56-590-65/3B
vk200* FERROXCUBE
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motorola 2198
Abstract: No abstract text available
Text: I MOT OR OL A SC XSTRS/R F 4bE D b3b?2SH □G'mSEG 7 «110Tb MOTOROLA • SEMICONDUCTOR T- 33-05 TECHNICAL DATA The RF Line NPN Silicon High Frequency Transistor 1C = 200 mA HIGH FREQUENCY TRAN SISTO R NPN SILICON . . d e sign e d for ultra-linear co m m u n ic a tio n s o r instrum entation applications. L o w n oise
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110Tb
LT3014
H-121
motorola 2198
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1377 transistor
Abstract: ITT S11 0 280 130 055
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise, small-signal amplifiers. Also used in applications requiring fast switching times. • High Current-Gain — Bandwidth Product —
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17A-01,
BFR90
b3b7254
010fc
1377 transistor
ITT S11
0 280 130 055
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CA3246M
Abstract: transistor k 911
Text: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate
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CA3227,
CA3246
CA3227
CA3246
CA3246M
transistor k 911
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MMBR2060
Abstract: mixer adc mhz MRF951
Text: MMBR941L See MRF941 MMBR951L (See MRF951) MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR2060L The RF Line NPIM Silicon High Frequency Transistor . . . designed prim arily for use in high-gain, low-noise amplifier, oscillator and mixer applications. Packaged for thick or thin-film circuits using surface
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MMBR941L
MRF941)
MMBR951L
MRF951)
MMBR2060L
MMBR2060
mixer adc mhz
MRF951
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CA3046 equivalent
Abstract: CA3046 CA3045 AN5296 Application of the CA3018 "Application of the CA3018" d143 T transistor "an5296 Application of the CA3018" Harris CA3046
Text: & CA3045, CA3046 «AR General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to
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CA3045,
CA3046
CA3045
CA3046
CA3046 equivalent
AN5296 Application of the CA3018
"Application of the CA3018"
d143 T transistor
"an5296 Application of the CA3018"
Harris CA3046
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MOTOROLA 2T transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor PNP Silicon MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Vottage Rating v CEO -4 0 Vdc C ollector-B ase Voltage VCBO -4 0 Vdc E m itter-B ase Voltage v EBO -5 .0 Vdc 'c -6 0 0 mAdc Symbol
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OT--23
MMBT4403LT1
MOTOROLA 2T transistor
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LG 631 IC
Abstract: D33D26 NPN transistor ECB TO-92 transistor npn Vcbo 25V
Text: Central semiconductor Corp. Central semiconductor Corp. 14 5 Adam s Avenue Hauppauge, N ew Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR D33D26 type is an NPN silicon transistor manufactured by the epitaxial planar process, designed for general purpose, high current applications.
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D33D26
D33D26
500mA,
500mA
20MHz
LG 631 IC
NPN transistor ECB TO-92
transistor npn Vcbo 25V
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CA3049T
Abstract: A3102 transistor j307 3049T CA3102 J307
Text: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent
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CA3049,
CA3102
500MHz
200MHz
CA3049T
A3102
transistor j307
3049T
CA3102
J307
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pt4579
Abstract: c90m nt 68 f 63 lg
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line N PN S ilicon High Frequency Tran sistor IQ = 200 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . d e s ig n e d f o r u ltr a - lin e a r c o m m u n ic a tio n s o r in s tr u m e n ta tio n a p p lic a tio n s r e q u irin g
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Untitled
Abstract: No abstract text available
Text: MPS5179* CASE 29-04, STYLE 1 TO-92 TO-226AA M AXIM UM RATINGS Rating Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CE0 12 Vdc C o lle c to r-B a s e V o lta g e VcBO 20 Vdc E m itte r-B a s e V o lta g e v EBO 2.5 V dc 'c 50 m Adc T / \ = 2 5 5C
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MPS5179*
O-226AA)
MPS5179
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2N5835
Abstract: 2N5836 M0330 2N5837 210,Motorola MRF5836HX MRF5836HXV VC80 qosmos To-206AF
Text: MOTOROLA SC XSTRS/R F MfciE b3b?554 D GO^MDTS MOTOROLA -F - 3 SEMICONDUCTOR ä • flOTb 1- 0 / 2N5835 2N5836 2N5837 TECHNICAL DATA The RF Line 2.5 G H z @ 10 m A d c - 2 N 5 8 3 5 2 .0 G H z @ 5 0 m A d c - 2 N 5 8 3 6 1.7 G H z @ 1 0 0 m A dc - 2 N 5 8 3 7
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2N5835
2N5836
2N5837
2N5835
2N5836
MIL-S-19500
2N5835,
2N5836,
M0330
2N5837
210,Motorola
MRF5836HX
MRF5836HXV
VC80
qosmos
To-206AF
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1S2112
Abstract: No abstract text available
Text: M AXIM UM RATINGS Symbol MPS536 Unit C o lle c to r -E m itte r V o lta g e Rating v CEO -1 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -1 5 Vdc E m itte r-B a s e V o lta g e Veb o -4 .5 Vdc C o n tin u o u s >C -3 0 mA P o w e r D is s ip a tio n iv T a = 25°C
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MPS536
lle500
IS12I
1S2112
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MMBR536
Abstract: No abstract text available
Text: 1EE § b3h72 SM MOTOROLA MOTOROLA SC QQ&75&S XSTRS/R □ I r-u-i r ' F SEM ICONDUCTOR TECHNICAL DATA MPS536 MMBR536 The RF Line PIMP Silico n High Frequency Transistor L O W N O IS E HIGH R F G A IN . this high current gain-bandwidth transistor makes an excellent RF amplifier and
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b3h72
MPS536
MMBR536
OT-23
A/500
IS22I
MMBR536
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