transistors
Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
Text: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer
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BC807
BC808
BC817
BC818
BC846
BC847
BC848
BC849
BC850
BC856
transistors
bc337 TRANSISTOR equivalent
BC337 hie hre hfe
EQUIVALENT TRANSISTOR bc547
bc547 sot 23 transistor
BC547 equivalent
bc337 hie
bc338 equivalent
bc327 equivalent
BC547 sot23
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36 V INPUT LOW-DROPOUT LINEAR REGULATOR
Abstract: AMC8877 AMC8878 MAX8878
Text: AMC DOC. #:AMC8878_A LF Jun 2004 AMC8877 ADD MICROTECH CORP. LOW NOISE 300mA LOW DROPOUT REGULATOR DESCRIPTION FEATURES Low output noise: 30µVRMS Industry standard’2982 pin assignment (AMC8877) Output voltage precision of ±1.4% accuracy Very low dropout voltage: 50mV/50mA,
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Original
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AMC8878
AMC8877
300mA
AMC8877)
50mV/50mA,
165mV/150mA
450mV/300mA
OT-23
MAX8878
36 V INPUT LOW-DROPOUT LINEAR REGULATOR
AMC8877
MAX8878
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PDF
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8879
Abstract: Microtech AMC8878 AMC8879 MAX8878 ab50 regulator
Text: AMC DOC. #:AMC8878_D LF March 2004 AMC8878/8879 ADD MICROTECH CORP. LOW NOISE 150mA LOW DROPOUT REGULATOR DESCRIPTION FEATURES Low output noise: 30µVRMS Industry standard’2982 pin assignment (AMC8878) Output voltage precision of ±1.4% accuracy Very low dropout voltage: 50mV/50mA and
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Original
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AMC8878
AMC8878/8879
150mA
AMC8878)
50mV/50mA
165mV/150mA
OT-23
MAX8878
TK111xxS
8879
Microtech
AMC8879
MAX8878
ab50 regulator
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PDF
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Untitled
Abstract: No abstract text available
Text: LF to 2.5 GHz TruPwr Detector AD8361 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS Calibrated rms response Excellent temperature stability Up to 30 dB input range at 2.5 GHz 700 mV rms, 10 dBm, re 50 Ω maximum input ±0.25 dB linear response up to 2.5 GHz
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AD8361
01088-C-002
AD8361ARTZ-RL7
AD8361-EVALZ
AD8361ART-EVAL
OT-23,
OT-23-6L
D01088â
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PDF
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AD8361
Abstract: ca3080 attenuator ca3080 AD8361ART-REEL7 AD8361-EVAL AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD8361ART-EVAL AD8361ART-REEL
Text: a LF to 2.5 GHz TruPwr Detector AD8361 FEATURES Calibrated RMS Response Excellent Temperature Stability Up to 30 dB Input Range at 2.5 GHz 700 mV rms, 10 dBm re 50 ⍀ Maximum Input ؎0.25 dB Linear Response Up to 2.5 GHz Single Supply Operation: 2.7 V to 5.5 V
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Original
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AD8361
OT-23-6L
AD8361
ca3080 attenuator
ca3080
AD8361ART-REEL7
AD8361-EVAL
AD8361ARM
AD8361ARM-REEL
AD8361ARM-REEL7
AD8361ART-EVAL
AD8361ART-REEL
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PDF
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MO178AA
Abstract: MO178AB JEDEC to 243 MO-137 MO-187 TSOT23 SOT23W-3 JEDEC MO-187 ba
Text: PACKAGE OUTLINES PLASTIC QUARTER-SIZED SMALL OUTLINE PACKAGE QSOP 24 leads Package Designator LF 8.74 .344 8.55 .337 8º 0º 24 0.25 .010 0.19 .007 3.99 .157 3.81 .150 6.20 .244 5.79 .228 A 1 1.27 .050 0.40 .016 2 0.254 .010 REF 24X SEATING PLANE GAUGE PLANE
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MO-137
MO-187
MO178AA
MO178AB
JEDEC to 243
TSOT23
SOT23W-3
JEDEC MO-187 ba
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PDF
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AD8361
Abstract: AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD8361ART-EVAL AD8361ART-REEL AD8361ART-REEL7 AD8361-EVAL AD8361 circuit AD8306
Text: a LF to 2.5 GHz TruPwr Detector AD8361 FEATURES Calibrated RMS Response Excellent Temperature Stability Up to 30 dB Input Range at 2.5 GHz 700 mV rms, 10 dBm re 50 ⍀ Maximum Input ؎0.25 dB Linear Response Up to 2.5 GHz Single Supply Operation: 2.7 V to 5.5 V
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Original
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AD8361
AD8361
AD8361ARM
AD8361ARM-REEL
AD8361ARM-REEL7
AD8361ART-EVAL
AD8361ART-REEL
AD8361ART-REEL7
AD8361-EVAL
AD8361 circuit
AD8306
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PDF
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BA231
Abstract: RF diodes BA423L BA480 DIODE ED 34 BA423
Text: 47 RF/Microwave Devices RF Diodes cont. Schottky-Barrier Diodes Primarily intended for mixing applications. Type Package Outline Vr (mV) BA480 BA481 DO-34 DO-34 280 450 @ lF (mA) (ft) 1 1 15 13 *s @ ed (pF) and f I? (mA) (kHz) 1 1 5 5 Vr max V R max lF (V)
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OCR Scan
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BA480
BA481
DO-34
DO-34
BA223
BA423
BA423L
BA482
BA231
RF diodes
BA423L
DIODE ED 34
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PDF
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ZC2800E
Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz
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OCR Scan
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OT-23
ZC2800E
ZC2810E
ZC2811E
ZC5800E
ZC2810E)
Ir-10mA
BAS70-05
BAS70-06
ZC2800-ZC5800
ZC830A
ZC831A
ZC832A
ZC833A
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PDF
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zc825
Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz
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OCR Scan
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OT-23
ZC2800E
ZC2810E
ZC2811E
ZC5800E
ZC2810E)
Ir-10mA
BAS70-05
BAS70-06
capac832A
zc825
ZC830A
ZC831A
ZC832A
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PDF
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FMMV105G
Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz
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OCR Scan
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OT-23
ZC2800E
ZC2810E
ZC2811E
ZC5800E
ZC2810E)
Ir-10mA
BAS70-05
BAS70-06
-3/C25
FMMV105G
ZC830A
ZC831A
ZC832A
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PDF
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s0103
Abstract: BAT42 equivalent BAT43 equivalent S0103C
Text: Schottky Diodes Silicon Schottky Barrier Diodes DO-35 Glass Package, MiniMELF Glass Package, SOD123 Plastic Package, SOT23 Plastic Package Type Peak Inv. Voltage PIV Power Dissipation at 25 °C Junction Temp. Forward Voltage Drop VF at lF Volts Reverse Current
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OCR Scan
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DO-35
OD123
SD101A*
SD101B
SD101C
SD103A
SD103B
SD103C
BAT42
s0103
BAT42 equivalent
BAT43 equivalent
S0103C
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PDF
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BAS70-05
Abstract: No abstract text available
Text: R.F. T R A N S IS T O R S A N D DIODES TABLE 8: SOT-23 DUAL SCHO TTKY BARRIER DIODES V b r at Type iR = 1 0 m A Min. Volts BA S70-04 BAS70-05 BAS 70-06 70 70 70 V F at CTatVR = 0V lF at V F= 1 V f = 1MHz Mark lF = 1mA •r Max. ImV) Max. nA at Vn (volts) Min. (mA)
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OCR Scan
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OT-23
S70-04
BAS70-05
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PDF
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BA482
Abstract: BA483 BA484 BA792 BA423AL
Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Tuner transistors & diodes RF & MICROWAVE SEMICONDUCTORS & MODULES SCHOTTKY-BARRIER DIODES AM BAND-SWITCHING DIODES cd @ V r and type number rD @ lF and f max £ì (mA) (MHz) max (pF)
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OCR Scan
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BA423A
BA423AL
DO-34
BA482
BA483
BA484
BA582
BA682
BA683
BA792
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PDF
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BAV105
Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30
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OCR Scan
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DO-35
DO-34
OD123
OD80C
OD110
OT143
OT323/
BAW62/
BAV21
BAV10
BAV105
BAS561
Diode BAx
1PS181
1PS184
1PS193
1PS226
philips 1n4148 DIODE
"Philips Semiconductors" BAX DO-35
Diode BAX 12
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PDF
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BAT543
Abstract: BAT744 BAS70-07
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes SCHOTTKY-BARRIER DIODES OVERVIEW surface-mount VR lF trr leaded max. max. max. DO-34 V (mA) (ns) 4 30 - BA481 4 30 - - 4 30 - -
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OCR Scan
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DO-34
BA481
OD80C
OD110
OD123
OT143
OT323
BAT93
BAT85
BAT81
BAT543
BAT744
BAS70-07
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PDF
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BA792
Abstract: BA482 BA484 DO-34 BA423AL BA582
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Tuner transistors & diodes SCHOTTKY-BARRIER DIODES AM BAND-SWITCHING DIODES type number BA423A BA423AL rD lF and f max mA (MHz) (Ö) 1.2 10 1 1.2
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OCR Scan
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BA423A
BA423AL
DO-34
BA482
BA483
BA484
BA582
BA682
BA683
BA792
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PDF
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JB Sot23
Abstract: BAR74 BAL74
Text: BAL74 BAR74 Circuit For Measuring Switching Time lF=10m A 0.2|xF Pulse is supplied by a generator w ith the follow ing characteristics: Output is monitored on a sampling oscilloscope w ith the follow ing characteristics: Input impedance = 5012 Rise tim e <= 0.6ns
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OCR Scan
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BAL74
BAR74
100ns
BAR74
BAL74
100mA
JB Sot23
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PDF
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marking L2
Abstract: No abstract text available
Text: SST502 Series Vishay Siliconix Current Regulator Diodes— P o v m in 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) > PRODUCT SUMMARY Part Number Typ lF (mA) Part Number tvp if Marking (mA) Marking S ST502 0.43
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OCR Scan
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SST502
SST503
SST504
SST505
SST506
SST507
SST508
SST509
O-236
marking L2
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PDF
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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OCR Scan
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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PDF
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"Philips Semiconductors" BAX DO-35
Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)
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OCR Scan
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DO-35
OD80C
BAX14
BA220
BA315
BA314
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
"Philips Semiconductors" BAX DO-35
B2V86-2V0
b2v86
BZV87-3V24
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PDF
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S3C marking
Abstract: No abstract text available
Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.
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OCR Scan
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BF556A
BF556B
BF556C
BF556B
23SHt.
bbS3031
S3C marking
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PDF
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Untitled
Abstract: No abstract text available
Text: LL4448 Small Signal Diodes FEATURES M iniM ELF ♦ Silicon Epitaxial Planar Diode ♦ Fast sw itching diode in M iniM E LF case especially suited for autom atic insertion. « This diode is also available in other case styles including: the DO-35 case with the type
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OCR Scan
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LL4448
DO-35
1N4448,
D-123
1N4448W,
OT-23
BD4448.
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PDF
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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OCR Scan
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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PDF
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