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    LED SIC EPITEX Search Results

    LED SIC EPITEX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

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    visible communication LED

    Abstract: 1900nm vics Beacon Epitex L940 PT008-SM PD032P00 led 430nm highpower Opto-Sensor IR Beacon PD006-33
    Text: -Opto-Devices & Custom LEDs- EPITEX INCORPORATION Editted on 12/07/2001 Introduction Our company mottoes are Challenge, Innovation and Advance We think that Epitex is a first manufacturer of Highpower and Highspeed IRLEDs in the world to cover a wide range


    Original     		PDF 880nm visible communication LED 1900nm vics Beacon Epitex L940 PT008-SM PD032P00 led 430nm highpower Opto-Sensor IR Beacon PD006-33

    ZnSe

    Abstract: No abstract text available
    Text: LUM E^Utes COLOR/INTENSITY SORTING LIGHT INTENSITY @ 10mA GROIN» LIGHT INTENSITY @ 20mA LIGHT INTENSITY Med @/10rnA GROUP mln. F G H 1 K L M N P Q R S T U V w 0,1 0,2 0,32 05 0,8 1,25 2 3,2 5 B 12,5 20 32 50 80 125 0,2 0,32 A B C O E' F Q H J K L M N P Q


    OCR Scan     		PDF /10rnA /20mA sPa85 ZnSe