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    LDMOS TRANSISTOR MOTOROLA Search Results

    LDMOS TRANSISTOR MOTOROLA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    LDMOS TRANSISTOR MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MXR9745RT1

    Abstract: FET SOT-89 N-Channel MXR9745T1 small signal transistor MOTOROLA motorola power fet rf High Dynamic Range FET sot-89
    Text: MOTOROLA Order this document by MXR9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T1 MXR9745RT1 N–Channel Enhancement–Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET


    Original     		PDF MXR9745T1/D MXR9745T1 MXR9745RT1 MXR9745RT1 MXR9745T1 FET SOT-89 N-Channel small signal transistor MOTOROLA motorola power fet rf High Dynamic Range FET sot-89

    305 Power Mosfet MOTOROLA

    Abstract: MRF9745 MRF9745T1 Case 449-02 305 Mosfet MOTOROLA marking J6 transistors Motorola transistor 358 j6 marking MRF9745T MRF974
    Text: MOTOROLA Order this document by MRF9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Silicon Lateral FET MRF9745T1 N–Channel Enhancement–Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable


    Original     		PDF MRF9745T1/D MRF9745T1 305 Power Mosfet MOTOROLA MRF9745 MRF9745T1 Case 449-02 305 Mosfet MOTOROLA marking J6 transistors Motorola transistor 358 j6 marking MRF9745T MRF974

    motorola rf device data book

    Abstract: MRF9482T1 305 Power Mosfet MOTOROLA motorola power fet rf
    Text: Freescale Semiconductor, Inc. Order this document BY MRF9482T1PP/D MRF9482T1 Product Preview Silicon Lateral FET, N-Channel Freescale Semiconductor, Inc. Enhancement-Mode MOSFET HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 36 dBm, 900 MHz Designed for use in low voltage, moderate power amplifiers such as


    Original     		PDF MRF9482T1PP/D MRF9482T1 MRF9482T1 motorola rf device data book 305 Power Mosfet MOTOROLA motorola power fet rf

    MRF9382

    Abstract: MRF9382T1 305 Power Mosfet MOTOROLA MOTOROLA SEMICONDUCTOR FET Case 449-02 motorola power fet rf motorola fet motorola rf device data book R 141 007 000
    Text: Freescale Semiconductor, Inc. Order this document BY MRF9382T1PP/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MRF9382T1 Product Preview Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 36.5 dBm, 900 MHz Designed for use in low voltage, moderate power amplifiers such as


    Original     		PDF MRF9382T1PP/D MRF9382T1 MRF9382 MRF9382T1 305 Power Mosfet MOTOROLA MOTOROLA SEMICONDUCTOR FET Case 449-02 motorola power fet rf motorola fet motorola rf device data book R 141 007 000

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    AN1977

    Abstract: MWIC930 david maurin freescale power fet RF products MHVIC915 MW4IC2020 MW4IC2230 MW4IC915 MOTOROLA SEMICONDUCTOR FET AN-489 motorola
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1977/D AN1977 Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family INTRODUCTION LDMOS THERMAL BEHAVIOR During a power amplifier design phase, an important item


    Original     		PDF AN1977/D AN1977 AN1977 MWIC930 david maurin freescale power fet RF products MHVIC915 MW4IC2020 MW4IC2230 MW4IC915 MOTOROLA SEMICONDUCTOR FET AN-489 motorola

    motorola rf Power Transistor

    Abstract: MHW910 GSM Base Station lp2951 AN1643 GSM1800 GSM1900 GSM900 MHW1810 MHW1910
    Text: MOTOROLA Order this document by AN1643/D SEMICONDUCTOR APPLICATION NOTE AN1643 RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit Prepared by: Julie Duclercq and Olivier Lembeye Motorola Semiconductor Products Sector Toulouse, France


    Original     		PDF AN1643/D AN1643 motorola rf Power Transistor MHW910 GSM Base Station lp2951 AN1643 GSM1800 GSM1900 GSM900 MHW1810 MHW1910

    motorola Base Station

    Abstract: AN1643 GSM1800 GSM1900 GSM900 LP2951 MHW1810 MHW1910 MHW910 GSM Base Station
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN1643/D SEMICONDUCTOR APPLICATION NOTE AN1643 RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit Prepared by: Julie Duclercq and Olivier Lembeye Motorola Semiconductor Products Sector


    Original     		PDF AN1643/D AN1643 motorola Base Station AN1643 GSM1800 GSM1900 GSM900 LP2951 MHW1810 MHW1910 MHW910 GSM Base Station

    M 9587

    Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
    Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station


    Original     		PDF SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210

    500 watts amplifier schematic diagram pcb layout

    Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
    Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a


    Original     		PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    MRF184

    Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France


    Original     		PDF AN1670/D AN1670 MRF184 transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    DIODE Z1 04 833 motorola

    Abstract: MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1 MHVIC915 MW4IC2230
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN1987/D SEMICONDUCTOR APPLICATION NOTE AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that


    Original     		PDF AN1987/D AN1987 MHVIC915 MW4IC915, MWIC930, MW4IC2020, MW4IC2230 MW5IC2030. DIODE Z1 04 833 motorola MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    MRF9742

    Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF MHW1184L MHW1224L MHW1254L MHW1304L MRF9742 MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1

    AN174

    Abstract: 50W linear power amplifier X96011 LM6142 LP2950 MRF9080 Vbe multiplier
    Text: Application Note AN174 Optimizing LDMOS Transistors Bias Control An Accurate Solution for Basestation RF Power Amplifiers Written by Jim Pflasterer LDMOS transistors are used for RF Power Amplification in numerous communications applications, with the most


    Original     		PDF AN174 X96011 LM6142 100pF 220pF MRF9080 LP2950 X96011 AN174 50W linear power amplifier LM6142 LP2950 MRF9080 Vbe multiplier

    3055vl motorola

    Abstract: 3055vl motorola ECU MODULE 3055V iso 9141 iso 9141 driver AEC-Q100-002 MC33690 MC33690DW SOIC20
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MC33690/D SEMICONDUCTOR TECHNICAL MC33690 Standalone Tag Reader Circuit Freescale Semiconductor, Inc. STARC STANDALONE TAG READER CIRCUIT The Standalone Tag Reader Circuit STARC is an integrated


    Original     		PDF MC33690/D MC33690 3055vl motorola 3055vl motorola ECU MODULE 3055V iso 9141 iso 9141 driver AEC-Q100-002 MC33690 MC33690DW SOIC20

    3055vl motorola

    Abstract: 3055vl ISO 9141 K line interface iso 9141 driver iso 9141 motorola ECU MODULE MC33690 Standalone Tag Reader Circuit K-Line L line motorola 125 khz reader antenna K-Line
    Text: MOTOROLA Order this document by MC33690/D SEMICONDUCTOR TECHNICAL MC33690 Standalone Tag Reader Circuit STARC STANDALONE TAG READER CIRCUIT The Standalone Tag Reader Circuit STARC is an integrated circuit dedicated to the automotive immobilizer applications. It


    Original     		PDF MC33690/D MC33690 125kHz 3055vl motorola 3055vl ISO 9141 K line interface iso 9141 driver iso 9141 motorola ECU MODULE MC33690 Standalone Tag Reader Circuit K-Line L line motorola 125 khz reader antenna K-Line

    Case 449-02

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9745T1 The RF Small Signal Line Silicon L ateral FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable


    OCR Scan     		PDF MRF9745T1 MRF9745T1 Case 449-02

    x.r sot 23

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M XR 9745T1 M XR9745RT1 The RF Small Signal Line Silicon Lateral FET N-Channel Enhancement-Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable


    OCR Scan     		PDF MXR9745RT1 MXR9745T1 9745T1 XR9745RT1 MXR9745RT1, MXR9745T1, MXR9745T1 x.r sot 23

    MRF9745

    Abstract: MOTOROLA L 358 Case 449-02 305 Power Mosfet MOTOROLA
    Text: MOTOROLA Order th is docum ent by MRF9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9745T1 The RF Small Signal Line Silicon L ateral FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable


    OCR Scan     		PDF MRF9745T1/D MRF9745T1 MRF9745 MOTOROLA L 358 Case 449-02 305 Power Mosfet MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MXR9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MXR9745T1 The RF Small Signal Line Silicon L atera l FET N-Channel Enhancement-Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable


    OCR Scan     		PDF MXR9745T1/D MXR9745T1 OT-89)

    mrf9745

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M RF9745T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information M RF9745T1 The RF Small Signal Line S ilic o n L a te ra l FET N-Channel Enhancement-Mode MOSFET 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable


    OCR Scan     		PDF RF9745T1/D RF9745T1 mrf9745