LDMOS TRANSISTOR Search Results

LDMOS TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
BLA1011-2	Rochester Electronics LLC	BLA1011-2 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLA1011-10	Rochester Electronics LLC	BLA1011-10 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLA0912-250	Rochester Electronics LLC	BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
BLF1046	Rochester Electronics LLC	BLF1046 - UHF Power LDMOS Transistor (Ampleon Die)

LDMOS TRANSISTOR Price and Stock

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Nexperia BSS84,215 MOSFETs SOT23 P CHAN 50V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BSS84,215	Reel	726,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0287	Buy Now

LDMOS TRANSISTOR Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
LDMOS Transistors in Power Microwave Applications		NXP Semiconductors	LDMOS Transistors in Power Microwave Applications		Original	PDF

LDMOS TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
capacitor 47pf 200v Abstract: ECJ1VB1H102K AN-067 thermistor 100k ohm thermistor 100k AN067 NOTE-AN067 EAN-103965 LDMOS 30w amplifier Text: APPLICATION NOTE-AN067 LDMOS Bias Temperature Compensation Introduction This paper is intended to provide useful guidance building a temperature compensating bias network for Sirenza LDMOS power modules and Sirenza packaged LDMOS transistors. LDMOS Characteristics	Original	PDF	NOTE--AN067 LM3480 EAN-103965 capacitor 47pf 200v ECJ1VB1H102K AN-067 thermistor 100k ohm thermistor 100k AN067 NOTE-AN067 LDMOS 30w amplifier
Untitled Abstract: No abstract text available Text: AN_BLF574 BLF574 LDMOS Transistor Model Rev. 01 — 12-08-2008 Application note Document information Info Content Keywords BLF574, BLF574, LDMOS, model Abstract This document describes the BLF574 LDMOS transistor model including its installation, usage and verification.	Original	PDF	BLF574 BLF574 BLF574, BLF574LDMOS
Untitled Abstract: No abstract text available Text: AN_BLS6G3135-120i BLS6G3135-120i LDMOS Transistor Model Rev. 02s — 21-05-2008 Application note Document information Info Content Keywords BLS6G3135-120i, BLS6G3135-120i_ LDMOS, model Abstract This document describes the BLS6G3135-120i LDMOS transistor model	Original	PDF	BLS6G3135-120i BLS6G3135-120i BLS6G3135-120i, BLS6G3135-120i_
Untitled Abstract: No abstract text available Text: AN_BLS6G3135-20i BLS6G3135-20i LDMOS Transistor Model Rev. 01s — 02-05-2008 Application note Document information Info Content Keywords BLS6G3135-20i, BLS6G3135-20i_ LDMOS, model Abstract This document describes the BLS6G3135-20i LDMOS transistor model including its installation.	Original	PDF	BLS6G3135-20i BLS6G3135-20i BLS6G3135-20i, BLS6G3135-20i_
Untitled Abstract: No abstract text available Text: AN_BLF578 BLF578 LDMOS Transistor Model Rev. 01 — 25-09-2008 Application note Document information Info Content Keywords BLF578, BLF578, LDMOS, model Abstract This document describes the BLF578 LDMOS transistor model including its installation, usage and verification.	Original	PDF	BLF578 BLF578 BLF578, BLF578LDMOS
Untitled Abstract: No abstract text available Text: AN_BLF878 BLF878 LDMOS Transistor Model Rev. 01 — 28-07-2008 Application note Document information Info Content Keywords BLF878, BLF878, LDMOS, model Abstract This document describes the BLF878 LDMOS transistor model including its installation, usage and verification.	Original	PDF	BLF878 BLF878 BLF878,
C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801
Untitled Abstract: No abstract text available Text: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.	Original	PDF	BLF884P OT1121A OT1121B-sized BLF884P
AN1228 Abstract: "RF MOSFETs" AN1226 Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic	Original	PDF	AN1228 AN1226) AN1228 "RF MOSFETs" AN1226
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
LDMOS Abstract: AN1226 AN1228 Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic	Original	PDF	AN1228 AN1226) LDMOS AN1226 AN1228
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
SD57045 Abstract: AN1224 Text: AN1224 Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher	Original	PDF	AN1224 SD57045 SD57045, AN1224

SD57045 Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,	Original	PDF	AN1224 SD57045, SD57045 CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
CAPACITOR 33PF Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils Text: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,	Original	PDF	AN1224 SD57045, CAPACITOR 33PF SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
Untitled Abstract: No abstract text available Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS	Original	PDF	IEDM2006,
HP RF TRANSISTOR GUIDE Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS	Original	PDF	SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device	Original	PDF	ILD1011M15 ILD1011M15 ILD1011M15-REV-NC-DS-REV-B
Untitled Abstract: No abstract text available Text: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very	Original	PDF	CA-330-11;
Untitled Abstract: No abstract text available Text: LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts LD0810-50 LD0810-50 Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V Features • • • • • • • Outline Drawing New LDMOS Technology Broadband Class AB Operation	Original	PDF	LD0810-50 -30dBc
SMD r801 Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	PDF	PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
c102 TRANSISTOR Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PDF	PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111
Untitled Abstract: No abstract text available Text: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high	Original	PDF	BLF888A

LDMOS TRANSISTOR Search Results

LDMOS TRANSISTOR Result Highlights (5)

LDMOS TRANSISTOR Price and Stock

Nexperia BSS84,215

LDMOS TRANSISTOR Datasheets (1)

LDMOS TRANSISTOR Datasheets Context Search

capacitor 47pf 200v

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C801

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AN1228

TRANSISTOR C802

c102 TRANSISTOR

LDMOS

TRANSISTOR C802

SD57045

SD57045

CAPACITOR 33PF

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HP RF TRANSISTOR GUIDE

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SMD r801

c102 TRANSISTOR

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