Untitled
Abstract: No abstract text available
Text: Technical Specification BQ4H136HTx80 230-400V 13.6V 80A 1048W 4250V Half-brick Input Output Current Power Isolation DC-DC Converter a pu d bl va ic n at ce io d n The BQ4H136HTx80 bus converter is a nextgeneration, board-mountable, isolated, fixed switching
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BQ4H136HTx80
30-400V
BQ4H136HTx80
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Untitled
Abstract: No abstract text available
Text: 02547^3 DODQQSb 5 • 1SE D ADVANCED ELECTRONIC ~ Z $ -O S. CY7C168 CY7C169 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Features • Automatic power-down when deselected 7C16S • CM OS for optimum speed/ power • High Speed — 25 n* Iaa — 15 ns tACE (7C169)
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CY7C168
CY7C169
7C16S)
7C169)
7C168)
CY7CI68
CY7C169
CY7C168
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Untitled
Abstract: No abstract text available
Text: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL
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65767B
65767B
16384x1
bfl45b
00GS411
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t 16 k
Abstract: F01011
Text: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum
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65767B
16384x1
00GS411
t 16 k
F01011
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sm 126 ao
Abstract: MSM41256A MSM41256A-10 MSM41256A-12 MSM41256A-15
Text: S8E D O K I • L 7 2 4 2 4 D 0012bfib 7 41 H O K I J S E M I C O N D U C T O R GROUP O K I semiconductor MSM41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> _ GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as
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L724240
-is-MSM41256A_
144-WORD
MSM41256A
dyn57
sm 126 ao
MSM41256A-10
MSM41256A-12
MSM41256A-15
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1492-AIFM6S-3
Abstract: rockwell powerflex 753 wiring diagram 20C-DA1-A 1321-3RB320-C powerflex 753 programming manual price list for bussmann semiconductor fuse 170M8547 30554 20C-DA1-B PFLEX-IN006
Text: PowerFlex 700H TECHNICAL DATA ADJUSTABLE FREQUENCY AC DRIVE PowerFlex 700H AC Drive - Technical Data 2 PowerFlex 700H AC Drive - Technical Data Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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20C-TD001B-EN-P
20C-TD001A-EN-P
1492-AIFM6S-3
rockwell powerflex 753 wiring diagram
20C-DA1-A
1321-3RB320-C
powerflex 753 programming manual
price list for bussmann semiconductor fuse
170M8547
30554
20C-DA1-B
PFLEX-IN006
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10G070-3L36
Abstract: No abstract text available
Text: T E K T R O N I X INC/ TRI ÖU IN T 2bE I> H fl^GbSlê O O O D M b l T EJ TRÖ Id n lB iL ] G ig a B it L o g ic 10G070 10G070K Variable Modulus Divider 2.0 GHz Clock Rate 10G PicoLogic Family FEATURES Mode pin allows 10G PicoLogic, TTL, and CMOS control of N or N+1 division ratio
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10G070
10G070K
10G070K
050P3
10G070-3L36
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377 hall sensor
Abstract: lb 385 IC circuit diagram posistor
Text: TA8420AF/TA8421AF 1 CHIP DC FAN MOTOR DRIVER Unit in mm Build-in Lock Sensing Circuit Over Heat Protector for Drive C o i l . Build-in Automatic Self Rotation Recovery Circuit After Release of Motor Locking. Operating Voltage : V q q opr=A~15V Output Current
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TA8420AF/TA8421AF
TA8420AF
TA8421AF
377 hall sensor
lb 385 IC circuit diagram
posistor
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Untitled
Abstract: No abstract text available
Text: Temic L 65756 S e m i c o n d u c t o r s 32 K X 8 High Speed CMOS SRAM 3.3 Volts Description The L 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a
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0DQ73C
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PFC design
Abstract: CS1500 15 watt Universal Line Input PFC Boost Converter CS1500-FSZ
Text: Nov ?$shortyear> CONFIDENTIAL CS1500 Digital Power Factor Correction IC Features & Description Description Digital EMI Noise Shaping The CS1500 is a high-performance power factor correction PFC controller for universal AC input, which uses a proprietary digital
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CS1500
CS1500
DS849F1
PFC design
15 watt Universal Line Input PFC Boost Converter
CS1500-FSZ
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CS1500
Abstract: pfc driver pfc 2000 watt
Text: Oct ?$shortyear> CONFIDENTIAL CS1500 Digital Power Factor Correction IC Features & Description Description Digital EMI Noise Shaping The CS1500 is a high-performance power factor correction PFC controller for universal AC input, which uses a proprietary digital
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CS1500
CS1500
DS849PP1
pfc driver
pfc 2000 watt
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CS1500
Abstract: compact case rectifier diode 230V AC input and 230V DC output
Text: May ?$shortyear> CONFIDENTIAL CS1500 Digital Power Factor Correction IC Features & Description Description Digital EMI Noise Shaping The CS1500 is a high-performance power factor correction PFC controller for universal AC input, which uses a proprietary digital
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CS1500
CS1500
DS849A6
compact case rectifier diode 230V AC input and 230V DC output
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Untitled
Abstract: No abstract text available
Text: TA8420AF/TA8421AF 1 CHIP DC FAN MOTOR DRIVER Unit in mm Build-in Lock Sensing Circuit Over Heat Protector for Drive Coil . Build-in Automatic Self Rotation Recovery Circuit After Release of Motor Locking. Operating Voltage : Vqq 0pr=4~15V Output Current
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TA8420AF/TA8421AF
TA8420AF
TA8421AF
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cro circuit diagram
Abstract: Audio Amplifier diagram audio amplifier circuit diagram AN7348K DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK tape head preamp circuit 61kQ audio tape head preamp circuit PRE-AMPLIFIER FOR TAPE deck Panasonic SU
Text: AN7348K AN7348K Dual Record/Playback Pre-Amplifier IC for Double Cassette • Description T h e A N 7348K is a m onolithic integrated circu it d esigned fo r double cassette recorder. It has d ual ch annel PB / R ec am plifier w ith A L C function. Tape A PB o n ly and Tape
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AN7348K
AN7348K
DD14DÃ
cro circuit diagram
Audio Amplifier diagram
audio amplifier circuit diagram
DUAL PRE-AMPLIFIER FOR TAPE PLAYBACK
tape head preamp circuit
61kQ
audio tape head preamp circuit
PRE-AMPLIFIER FOR TAPE deck
Panasonic SU
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-5v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-5v0-E
MB85R4002A
MB85R4002A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-4v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-4v0-E
MB85R1002A
MB85R1002A
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JEDEC TRAY DIMENSIONS - TSOP48
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-3v0-E
MB85R4002A
MB85R4002A
JEDEC TRAY DIMENSIONS - TSOP48
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-3v0-E
MB85R1002A
MB85R1002A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-3v0-E
MB85R1002A
MB85R1002A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-3v1-E
MB85R4002A
MB85R4002A
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48-pin TSOP package tray
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-2v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-2v0-E
MB85R4002A
MB85R4002A
48-pin TSOP package tray
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bu2114
Abstract: No abstract text available
Text: Standard ICs 8-bit shift register and latch driver B U 2 1 1 4 /B U 2 1 1 4 F The BU2114 and BU2114F are CMOS ICs with low power consum ption, and are equipped with an 8-bit shift register latch. Data in the shift register can be latched asynchronously. The ou tputs 01 to 0 8 are open drain ou tputs (be
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BU2114
BU2114F
150mA
7fl20c
D021b37
BU2114/BU2114F
0021b30
021b3i
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-3v1-E
MB85R4002A
MB85R4002A
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DS-501
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-2v0-E
MB85R1002A
MB85R1002A
DS-501
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