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KAGA FEI America Inc MB85R4002ANC-GE1 IC FRAM 4MBIT PARALLEL 48TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85R4002ANC-GE1	Tray			634	1 - 10 - 100 - 1000 $17.76416 10000 $17.76416	Buy Now
FUJITSU Limited MB85R4002ANC-GE1 Fram, 4Mbit, 120Ns, Tsop-48; Memory Type:Fram; Memory Size:4Mbit; Nvram Memory Configuration:256K X 16Bit; Ic Interface Type:Parallel; Access Time:120Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes \|Fujitsu MB85R4002ANC-GE1
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Newark	MB85R4002ANC-GE1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RAMXEED MB85R4002ANC-GE1 4Mbit FRAM (256k x16) parallel interface - TSOP48 tray
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Symmetry Electronics	MB85R4002ANC-GE1				128	1 - 10 - 100 - 1000 $16 10000 $16	Buy Now
RAMXEED MB85R4002APFCN 4Mbit FRAM x16 parallel TSOP48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Symmetry Electronics	MB85R4002APFCN				1	1 $29.93 10 $29.93 100 $29.93 1000 $29.93 10000 $29.93	Buy Now

MB85R4002A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R4002ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 4MBIT 150NS 48TSOP		Original	PDF

MB85R4002A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-0v01-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-0v01-E MB85R4002A MB85R4002A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-5v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-5v0-E MB85R4002A MB85R4002A	PDF
JEDEC TRAY DIMENSIONS - TSOP48 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-3v0-E MB85R4002A MB85R4002A JEDEC TRAY DIMENSIONS - TSOP48	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-3v1-E MB85R4002A MB85R4002A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-3v1-E MB85R4002A MB85R4002A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-1v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-1v0-E MB85R4002A MB85R4002A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-4v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-4v0-E MB85R4002A MB85R4002A	PDF
48-pin TSOP package tray Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-2v0-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00006-2v0-E MB85R4002A MB85R4002A 48-pin TSOP package tray	PDF
FUJITSU FRAM Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00013-2v1-E FRAM MB85R4002A MB85R4002A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00013-2v1-E MB85R4002A MB85R4002A 15mA5 I/O16 I/O15 I/O14 I/O13 I/O12 FUJITSU FRAM	PDF