submersible motor winding formula
Abstract: dc motor for 24v braun
Text: Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 1 Drive technology for AC and DC The engineer’s choice version 2011 Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 2 Innovations for the future The right product for every requirement
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RA-06/11-4â
M1138
D-78112
D-74673
D-84030
submersible motor winding formula
dc motor for 24v braun
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PM-308
Abstract: 8WIN PM1008 PM108A pm 108 PM308 PII-108
Text: ANALOGDE~ICESfAX-ON-DEHANDHOTLINE - Page 38 ANALOG Low-input-Current Operational Amplifiers W DEVICES PM-'08/PM208/PM-308 I I FEATURES . GENERAL DESCRIPTION The PM-108A series of precision operational amplifiers feature very low input offset and bias currents. Although
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08/PM208/PM-308
200pA
Proce88lng
Q811AX
PM-108A
PM-108A
PM-308
8WIN
PM1008
PM108A
pm 108
PM308
PII-108
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PW610
Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,
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2SJ324
IEI-1209)
PW610
TEA1034
2SK 246 transistor
alps ALP
Q8060
pw410
2SK 2462 transistor
nec Semiconductors Selection Guide
X-2462
LF 20v0
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intel 8288
Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
Text: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or
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w-9707
116th
SA/C-258n81
/45K/RRD
intel 8288
intel 8288 bus controller
8085 MICROCOMPUTER SYSTEMS USERS MANUAL
8086 interrupt structure
design fire alarm 8088 microprocessor
RCA SK CROSS-REFERENCE
8086 family users manual
8086 user manual
AP 67
weir smm 200
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Issues in Political Theory
Abstract: moores law
Text: 21st Century Semiconductor Manufacturing Capabilities Eugene S. Meieran, Intel Fellow Technology Manufacturing Engineering, Intel Corp. Index words: manufacturing, operational cost, NGM program Abstract Semiconductor device manufacturers face many difficult challenges as we enter the 21st century. Some are direct consequences of adherence to Gordon Moores Law, which states
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D4217400
Abstract: nec 4217400
Text: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili
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JJPD4216400,
/PD4216400
/JPD4217400
28/24-pin
MjE30(
6D-15
fiPD4216400,
pPD4216400,
D4217400
nec 4217400
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Untitled
Abstract: No abstract text available
Text: AW i « »02 O rd& r & M U T o c\'b f\ HM514270, HM514270L Series Preliminary 262,144-word x 16-blt Dynamic Random Access Memory ^ H I T A T he H itachi H M 514270/L are CMOS dynamic R A M o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 16-bit. HM514270/L have realized higher density, higher
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HM514270,
HM514270L
144-word
16-blt
514270/L
16-bit.
HM514270/L
400-mil
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001104 203 02
Abstract: DG110 qml-38535 5962-90622
Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET 35 36 37 38 39 40 41 42 43 44 45 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV REV STATUS OF SHEETS SHEET PREPARED BY PMIC N/A DEFENSE ELECTRONICS SUPPLY CENTER
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Untitled
Abstract: No abstract text available
Text: Te m ic TLH.4900 TELEFUNKEN Semiconductors High Efficiency LED in 0 3 mm Clear Package Color High efficiency red Soft orange Yellow Green Technology TLHR4900 TLH04900 TLHY4900 TLHG4900 GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP Angie of Half Intensity
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TLHR4900
TLH04900
TLHY4900
TLHG4900
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relay lzl
Abstract: k3n omron Scans-031 SSC 9500
Text: Period Meter omRon K3NP Period Meter Operation Manual Produced January 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual. The following conventions are used to indicate and classify precautions in this manual. Always heed
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6-949-6035/Fax:
NL-2132
2356-81-300/Fax:
847-843-7900/Fax:
835-3011/Fax:
N94-E1
relay lzl
k3n omron
Scans-031
SSC 9500
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133M
Abstract: xax3
Text: TOSHIBA TC59S6432CFT/CFTL-54,-60,-70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock
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TC59S6432CFT/CFTL-54
288-WORDSX4BANKSX32-BITS
TC59S6432CFT/CFTL
288-wordsX4
62MAX
133M
xax3
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dsa 362
Abstract: No abstract text available
Text: ADE-203-231B Z HM538123B Series 131072-word x 8-bit Multiport CMOS Video RAM H I T A The HM538123B is a 1-Mbit multiport video R A M equipped with a 128-kword x 8-bit dynamic C H I data between R A M and SAM . In addition, it has two modes to realize fast writing in RAM . Block
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ADE-203-231B
HM538123B
131072-word
128-kword
256-word
128-word
dsa 362
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HM511001AP-12
Abstract: 511001AP
Text: HM511001A Series 1,048,576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511001AP Series The H itachi H M 51 1 0 01 A series is a C M OS dynam ic R AM organized 1,048,576w ord x 1-bit. H M 51 1001A has realized higher density, higher p erform ance and vari
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HM511001A
576-Word
11001A
18-pin
20-pin
3DOP18C
511001AP
HM511001AP-12
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Untitled
Abstract: No abstract text available
Text: IBM11D4400C IBM11D4370C IBM11E4400C IBM11E4370C 4M X 36/4M X 40 D R A M M odules Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 ÎRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns I aa Access Time From Address
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IBM11D4400C
IBM11D4370C
IBM11E4400C
IBM11E4370C
36/4M
72-Pin
110ns
130ns
IBM11D4400cp
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814800
Abstract: cr2927 814800S
Text: FUJITSU LTD S3E » • 374<ì75b DDD34D3 ^ ci ci « F C A J c O May 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 8 0 0 A -70/-80/-10 CMOS 512KX.8 BIT FAST PAGE MODE D YNAMIC RAM CMOS 524,288 x 8 bit Fast Page Mode Dynamic RAM The Fujitsu MB814800Ais a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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DDD34D3
512KX
MB814800Ais
MB814800A
512x8-bits
MB814800A-70/-80/-10
814800
cr2927
814800S
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Untitled
Abstract: No abstract text available
Text: IBM0165400B 16M X 4 DRAM Features • Low Power Dissipation - Active: 504m W /432m W max - Standby (LVTTL Inputs): 7.2m W (max) - Standby (LVCMOS Inputs): 720 W (max) • 16,777,216 word by 4 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cycles/64ms
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IBM0165400B
cycles/64ms
110ns
/432m
500milx875mil)
0165400BJ5A/T5A
IBM0165400B
06H0001
MMDD45DSU-01
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BR17
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Joint Audio Decoder-Encoder - Multimode PSB 7238 Version 2.1 Datasheet 1998-07-01 DS 1 PSB 7238 1998-07-01 Revision History: Current Version: 1998-07-01 Previous Version: Preliminary Data Sheet 06.98 V1.2 Page (in previous
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P-TQFP-100
BR17
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V53C466
Abstract: DQQ0400 vitelic V53C466 lawo M54510
Text: VITELIC VITELIC CORP ifl D ÌJ ^505310 DQQ0400 7 T-V6-Z3-/7 V 5 3C 4 66 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT S TA TIC CO LUM N CMOS DYN A M IC RAM 70/70L 8 0 /8 0 L 10/10L Max. RAS Access Time, t ^ 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tCAA
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DQQ0400
70/70L
V53C466
10/10L
V53C466L
V53C466-12
DQQ0400
vitelic V53C466
lawo
M54510
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D482234
Abstract: PD482234
Text: SEC NEC Electronics Inc. Preliminary Information Description Each of the jjPD482234 fast-page and pPD482235 (hyper-page) video RAMs has a random access port and a serial read port. The serial read port is connected to an internal 4096-bit data register through a 512 x
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jjPD482234
pPD482235
4096-bit
256Kx
D482234
PD482234
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transistor 1BT 86
Abstract: 26-PIN MSM5116100A
Text: O K I Semiconductor MSM5 1 16100 A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynam ic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is O K I’s C M O S silicon gate process technology.
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MSM5116100A_
216-Word
MSM5116100A
cycles/64ms
SOJ26/24-P-3QO-1
S0J26/24-P-300-1
b72M240
QQ24b37
transistor 1BT 86
26-PIN
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC59S6432CFT/CFTL-54,-60,-70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock
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TC59S6432CFT/CFTL-54
288-WORDSX4BANKSX32-BITS
TC59S6432CFT/CFTL
288words
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ic 40103
Abstract: 74HC40103
Text: F Z Z SCS-THOM SON M54/74HC40102 M54/74HC40103 ^ 7 # , EB lllLI gre©HDei 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGH SPEED fMAX = 34 MHz (Typ at Vcc = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY V N IH = V N I L = 28% Vcc (MIN.)
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M54/74HC40102
M54/74HC40103
40102B/40103B
M54/74HC40102/40103
t10246
HC40102
HC40103
M54/74HC40102/40103
ic 40103
74HC40103
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SI HV5
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 6 4 16 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READA/VRITE MODE Description T h e;/P D 426 416 5, 4265165 are 4,194.304 w ords by 16 bits C M OS dynam ic RAMs with optional h yper page mode
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16-BIT,
50-pin
uPD4264165-A50
uPD4265165-A50
uPD4264165-A60
uPD4265165-A60
S50GS-80-7JF3
PD4264165,
iPD4264165G5-7JF,
65165G
SI HV5
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133M
Abstract: No abstract text available
Text: TOSHIBA TC59S6432CFT/CFTL-54,-60,-70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock
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TC59S6432CFT/CFTL-54
288-WORDSX4BANKSX32-BITS
TC59S6432CFT/CFTL
288-wordsX4
0-61TYP
P-22-0
62MAX
133M
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