Vishay diode u60
Abstract: LATTICE 3000 SERIES alcon lm 555 diagram GaAs p-n diode Light-emitting diode inp
Text: Vishay Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.
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LED top layer reflector
Abstract: telefunken diodes SI 61 L 565nm led detector 650nm Receivers lattice LM 45 diode SI 61 L telefunken
Text: Vishay Telefunken Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.
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929p
Abstract: Light-emitting diode inp silicon carbide LED Gan on silicon substrate
Text: VISHAY Vishay Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.
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05-Jul-04
929p
Light-emitting diode inp
silicon carbide LED
Gan on silicon substrate
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DWG-001216
Abstract: 001216 NCP15XH103J03RC dj bj 810 215R6 CBT-90 DNG14-250FL
Text: PRODUCT DATA SHEET PRELIMINARY PhlatLight LED Illumination Products CBT-90 RGB Features • Extremely high optical output: Over 810 Red Lumens Over 1800 Green lumens Over 450 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 ºC/W
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CBT-90
DWG-001216
001216
NCP15XH103J03RC
dj bj 810
215R6
DNG14-250FL
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physics
Abstract: lattice LM 45 565nm led detector tr 4as silicon carbide LED
Text: Vishay Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.
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ban580
05-Jul-04
physics
lattice LM 45
565nm led detector
tr 4as
silicon carbide LED
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SLIC DIAGRAM
Abstract: br06 BR08 plc array Bc600 OR3T125 OR3T20 OR3T30 ORCA Series 3C ORCA Series 2
Text: Product Brief January 2002 ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.35 µm and 0.3 µm 4-level metal technology 4- or 5-input look-up table delay of 1.2 ns with -7 speed grade in 0.3 µm .
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208-Pin
OR3T20
OR3T30
OR3C/T55
OR3C/T80
OR3T125
240-Pin
PS208
SLIC DIAGRAM
br06
BR08
plc array
Bc600
OR3T125
OR3T20
OR3T30
ORCA Series 3C
ORCA Series 2
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CBT-120
Abstract: PDS-001226 NCP15XH103J03RC LM2500 cbt-120-g-c11 NCP15XH103J03 KF300 RC11B DF-3 dwg001124
Text: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-120 Series Features • Extremely high optical output: Over 1225 Red Lumens Over 2000 Green lumens Over 470 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.7 ºC/W
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CBT-120
PDS-001226
NCP15XH103J03RC
LM2500
cbt-120-g-c11
NCP15XH103J03
KF300
RC11B
DF-3
dwg001124
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CF 775
Abstract: cf775 JC200 HC100 NCP15XH103J03RC CBT-40-G-C21-JC200 R5631 A 1050 09
Text: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-40 Series Features • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 1.8 ºC/W
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CBT-40
CF 775
cf775
JC200
HC100
NCP15XH103J03RC
CBT-40-G-C21-JC200
R5631
A 1050 09
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Untitled
Abstract: No abstract text available
Text: PT39 Product Datasheet PT39 LEDs Features: • Matched RGB Chipset with 3.9 mm2 emitting area designed for LED projector applications Table of Contents Technology Overview. . . . . . 2 • Photonic lattice technology for very high surface brightness and uniform surface
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615nm,
460nm
PDS-001338
Rev08
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CBT-120
Abstract: No abstract text available
Text: CBT-120 CBT-120Product Product Datasheet CBT-120 LEDs Features: Table of Contents Technology Overview. . . . . . 2 Test Specifications . . . . . . . . . 2 Bin Codes. . . . . . . . . . . . . . . . . . 3 • Extremely high optical output: Over 1225 Red Lumens
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CBT-120
PDS-001226
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Untitled
Abstract: No abstract text available
Text: CBT-120 CBT-120Product Product Datasheet CBT-120 LEDs Features: Table of Contents Technology Overview . . . . . .2 Test Speciications . . . . . . . . .2 Bin Codes . . . . . . . . . . . . . . . . . .3 • Extremely high optical output: Over 1225 Red Lumens
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CBT-120
PDS-001226
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Untitled
Abstract: No abstract text available
Text: CBT-40 Product Datasheet CBT-40 LEDs Features: Technology Overview. . . . . . 2 • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens Test Specifications . . . . . . . . . 2 • High thermal conductivity package - junction to heat sink thermal resistance of only
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CBT-40
PDS-001229
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Untitled
Abstract: No abstract text available
Text: CBT-40 Product Datasheet CBT-40 LEDs Features: Technology Overview . . . . . .2 • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens Test Speciications . . . . . . . . .2 • High thermal conductivity package - junction to heat sink thermal resistance of only
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CBT-40
PDS-001229
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Untitled
Abstract: No abstract text available
Text: Lattice GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 10ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs
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GAL18V10
100ms)
22V10
GAL18V10
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TLMB100
Abstract: light-sensitive resistor GaAs silicon carbide LED telefunken diodes SI 61 L
Text: T e m ig TELEFUNKEN Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as
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DS0075
Abstract: GAL22LV10C
Text: Lattice G A L 2 2 L V 1 0 C Low Voltage E2CMOS PLD Generic Array Logic ] Semiconductor I Corporation FEATURES • 3.3V LOW VOLTAGE 22V10 A rchitecture — Interfaces with Standard 5V TTL Devices — 45m A Typical Active C urrent 75m A Max. FUNCTIONAL BLOCK DIAGRAM
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22V10
125MHz
GAL22LV10C
GAL22LV10C:
1-800-FASTGAL
DS0075
GAL22LV10C
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Untitled
Abstract: No abstract text available
Text: Lattice •■■■■■ GAL22LV10C Semiconductor Corporation Low Voltage E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • 3.3V LOW VOLTAGE 22V 10 Architecture — Interfaces with Standard 5V TTL Devices — 45m A Typical Active C urrent 75m A Max.
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GAL22LV10C
125MHz
53flbi4c
00040b2
GAL22LV10C:
DDD40L3
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GAL6001-30P
Abstract: ic 8155 block diagram GAL6001-30J
Text: Lattice GAL6002B High Performance E2CMOS FPLA Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 15ns Maximum Propagation Delay — 75MHz Maximum Frequency — 6.5ns Max. Clock to Output Delay — TTL Compatible 16mA Outputs
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GAL6002B
75MHz
100ms)
GAL6001-30P
ic 8155 block diagram
GAL6001-30J
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Untitled
Abstract: No abstract text available
Text: Lattica ispLSI 3256A ;Semiconductor I Corporation High Density Programmable Logic Functional Block Diagram Features HIGH-DENSITY PROGRAMMABLE LOGIC — 1281/0 Pins — 11000 PLD Gates — 384 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State
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160-Pin
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loadable 4 bit counter
Abstract: No abstract text available
Text: Lattice ispLSI and pLSI 6192 ; Semiconductor I Corporation High Density Programmable Logic with Dedicated Memory and Register/Counter Modules — 96 I/O Pins with Input Registers — Security Cell Prevents Unauthorized Design Copy ing Features • A FAMILY OF HIGHLY INTEGRATED, CELL-BASED,
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50MHz
6192FF-70LM
6192FF-50LM
6192S
-70LM
-50LM
loadable 4 bit counter
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ispGAL16Z8-25L
Abstract: GAL programming Guide LA1T PAL Decoder 16L8 GAL16V8 T-25 0/ispGAL16Z8
Text: Lattice Semiconductor is p G A L 1 6 Z 8 In-System Programmable Generic Array Logic Corporation™ U.S. Patents 4.761.768 n d 4766,569 FU N C TIO N AL BLOCK DIA GR A M FEA TU RES • IN-SYSTEM -PROGRAM M ABLE - - 5-VOLT ONLY — Change Logic "On the Fly" In le ss than 1 s
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20-pin
100ns
ispGAL16Z8-25L
GAL programming Guide
LA1T
PAL Decoder 16L8
GAL16V8
T-25
0/ispGAL16Z8
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Untitled
Abstract: No abstract text available
Text: LÆ y S R 6 4 K 8 HIGH-SPEED 64K STATIC RAM 8 K x8 FUNCTIONAL BLOCK DIAGRAM FEATURES • FULLY STATIC - v Cc — No Clocks Required - GND A 5— • FAST ACCESS TIME = CYCLE TIME — — — — SR64K8-35: SR64K8-40: SR64K8-45: SR64K8-55: a 7— a8—.
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SR64K8-35:
SR64K8-40:
SR64K8-45:
SR64K8-55:
28-Pin,
32-Lead,
0-A12
ENABL00-FASTMEM
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Untitled
Abstract: No abstract text available
Text: Lattice G AL20RA10 High-Speed Asynchronous E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E’CM O S* TECHNOLOGY — 12 ns Maximum Propagation Delay — Fmax =71.4 MHz — 12 ns Maximum from Clock Input to Data Output
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AL20RA10
24-Pin
GAL20RA10-15LJ
28-Lead
GAL20RA10-20LP
GAL20RA10-20LJ
GAL20RA10-30LP
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416RP
Abstract: gal 16v8 programming specification
Text: Lattice G A L16LV8C Low Voltage E2CMOS PLD Generic Array Logic . . . J Semiconductor i • ■ ■ Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • 3.3V LOW VOLTAGE — Interfaces with Standard 5V TTL Devices — 45mA Typical Active Current 65mA Max.
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L16LV8C
100ms)
GAL16LV8C
GAL16LV8C:
1-800-FA
416RP
gal 16v8 programming specification
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