NV4V31MF
Abstract: Laser Diode 405 nm 400 mW
Text: Preliminary Data Sheet Specifications in this document are tentative and subject to change. NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0001 Rev.0.01 Sep 08, 2011 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
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NV4V31MF
R08DS0045EJ0001
NV4V31MF
Laser Diode 405 nm 400 mW
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML6xx71 LD SERIES FOR MOTION SENSOR TYPE NAME ML60171C DESCRIPTION FEATURES Mitsubishi ML6xx71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 827 nm and standard light output of 260mW. This LD has narrow-stripe structure which enables
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ML6xx71
ML60171C
260mW.
260mW
827nm
TLDE-P1323
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organic light emitting diode
Abstract: No abstract text available
Text: LASER DIODES ML6xx71 LD SERIES FOR MOTION SENSOR TYPE NAME ML60171C DESCRIPTION FEATURES Mitsubishi ML6xx71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 827 nm and standard light output of 260mW. This LD has narrow-stripe structure which enables
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ML6xx71
ML60171C
260mW
827nm
260mW.
TLDE-P1323
organic light emitting diode
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ML5xx71
Abstract: Ml5x
Text: LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G71 DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 300mW. This LD has broad-stripe structure which enables
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ML5xx71
ML520G71
300mW
638nm
ML520G71
300mW.
TLDE-P1251
Ml5x
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM ML520G71 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 300mW. This LD has broad-stripe structure which enables
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ML5xx71
ML520G71
300mW
638nm
ML520G71
300mW.
TLDE-P1251
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NDL3320SU
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION VISIBLE LASER DIODE NDL3320SU 5 mW, 650 nm AlGaInP MQW VISIBLE LASER DIODE FOR CD-ROM, DVD APPLICATIONS DESCRIPTION NDL3320SU is an AlGaInP visible laser diode and especially developed for CD-ROM, DVD. The newly developed Multipule Quantum Well MQW LD chip, can achieve low operating current, wide
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NDL3320SU
NDL3320SU
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Laser Diode 405 nm
Abstract: LD chip NV4V31MF Laser Diode 405 nm 400 mW 5N5408
Text: Preliminary Data Sheet NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0100 Rev.1.00 Mar 05, 2012 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW at up to 85°C. The NV4V31MF can provide excellent linearity
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NV4V31MF
R08DS0045EJ0100
NV4V31MF
Laser Diode 405 nm
LD chip
Laser Diode 405 nm 400 mW
5N5408
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ML520G71
Abstract: p1068
Text: MITSUBISHI LASER DIODES ML5xx71 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G71 DESCRIPTION FEATURES Mitsubishi ML520G71 is a high-power, highefficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 300mW.
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ML5xx71
ML520G71
ML520G71
300mW.
300mW
638nm
TLDE-P1068
p1068
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ML501P73
Abstract: No abstract text available
Text: LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM ML501P73 TYPE NAME DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML501P73
638nm
ML501P73
Duty33%
frequency50Hz
TLDE-P1245
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ML501P73
Abstract: Semiconductor Laser International Corporation
Text: MITSUBISHI LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML501P73
ML501P73
638nm
Duty33%
frequency50Hz
TLDE-P1123
Semiconductor Laser International Corporation
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML501P73
ML501P73
638nm
TLDE-P1245
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Semiconductor Laser International Corporation
Abstract: No abstract text available
Text: LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML501P73
638nm
ML501P73
Duty33%
frequency50Hz
TLDE-P1245
Semiconductor Laser International Corporation
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ML520G72
Abstract: ML5xx72
Text: MITSUBISHI LASER DIODES ML5xx72 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G72 DESCRIPTION FEATURES • High Output Power: 500mW CW Mitsubishi ML520G72 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx72
ML520G72
500mW
ML520G72
500mW.
638nm
Duty25%
frequency50Hz
TLDE-P1074
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10 gb laser diode
Abstract: 10ghz optical modulator driver
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF FEATURES • Driver integrated 10Gb/s MI-DFB module for 800ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is included • Modulator driver IC is included • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF
10Gb/s
800ps/nm
FTM1141GF
FCSI0103M200
10 gb laser diode
10ghz optical modulator driver
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10ghz optical modulator driver
Abstract: FTM1141GF-C nrz optical modulator 10Gb/s laser driver stm-64 dfb TEC Driver STM-64 10 gb laser diode Integrated Modulator and Driver Module
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF-C FEATURES • Driver integrated 10Gb/s MI-DFB module for 1600ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is installed • Modulator driver IC is installed • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF-C
10Gb/s
1600ps/nm
FTM1141GF-C
als4888
10ghz optical modulator driver
nrz optical modulator
10Gb/s laser driver
stm-64 dfb
TEC Driver
STM-64
10 gb laser diode
Integrated Modulator and Driver Module
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML6ｘｘ40 LD SERIES FOR PUMPING ML620G40 TYPE NAME DESCRIPTION FEATURES • High output power: 0.5 W CW and 1.2W (Pulse) ML6xx40 is a high-power, high-efficient semiconductor laser diode which provides a stable oscillation with • Lasing wavelength: 805 nm (typ.)
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ML640
ML620G40
ML6xx40
805nm
frequency50Hz
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ML520G73
Abstract: ML520 638nm Ml5x
Text: E V I T A T N TE TYPE NAME LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM ML520G73 DESCRIPTION FEATURES • High Output Power: 500mW CW Mitsubishi ML520G73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML520G73
500mW
638nm
ML520G73
500mW.
TLDE-P1324
ML520
638nm
Ml5x
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2 Wavelength Laser Diode
Abstract: "Thermoelectric Cooler" thermoelectric 10 gb laser diode dfb laser diode cwdm dfb-ld butterfly package gain coupled DFB aifotec
Text: www.aifotec.com DFB Laser Diode for C-WDM The cooled coax DFB-LD Distributed Feedback Laser Diode Discription > The cooled DFB-LD has a gain coupled, Multi-Quantum-Well structure (InGaAsP/InP) within a hermetically sealed subcomponent. > By means of a thermoelectric
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STM-16
OC-48)
D-82152
2 Wavelength Laser Diode
"Thermoelectric Cooler"
thermoelectric
10 gb laser diode
dfb laser diode cwdm
dfb-ld butterfly package
gain coupled DFB
aifotec
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laser diode 30mw
Abstract: 2 Wavelength Laser Diode high power laser 6 pin laser diode single power diode package SLD1231VL PE9531
Text: SLD1231VL High Power Red Laser Diode Preliminary For the availability of this product, please contact the sales office. Package Outline Unit : mm M-274 Reference Slot 1.0 0.4 Description The SLD1231VL is a short wavelength high power laser diode, created as a light source for the nextgeneration high density magneto-optical discs.
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SLD1231VL
M-274
SLD1231VL
685nm)
laser diode 30mw
2 Wavelength Laser Diode
high power laser
6 pin laser diode
single power diode package
PE9531
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Hitachi DSA0096
Abstract: hitachi le7602 LE7602-L LE7602-S hitachi laser diode
Text: Preliminary Technical Data Rev. 0.1, June 16, 2000 LE7602-S Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been
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LE7602-S
FOD-DS-00076
Hitachi DSA0096
hitachi le7602
LE7602-L
LE7602-S
hitachi laser diode
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TOLD9442M
Abstract: laser diode toshiba 650
Text: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
TOLD9442M
laser diode toshiba 650
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PIN Photodiode side look
Abstract: TOLD9442M
Text: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
35idual
PIN Photodiode side look
TOLD9442M
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laser diode toshiba
Abstract: TOLD9442M laser diode toshiba 650 TOLD told9442 daiode
Text: TO SH IBA TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
OLD9442
laser diode toshiba
TOLD9442M
laser diode toshiba 650
TOLD
told9442
daiode
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Untitled
Abstract: No abstract text available
Text: Laser Diodes AIGaAs, near-infrared laser diode RLD-85PC T he R LD -85P C is th e w o r ld ’s firs t •E x te rn a l dim ensions Unit: mm m a s s -p ro d u c e d la se r d io d e th a t is manufactured by m olecular beam epi taxy. The wavelength is 850 nm for re
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RLD-85PC
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