Laser Diode 808 300 mw
Abstract: No abstract text available
Text: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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SLD-808-P200-C-04
808nm
886-3-485-268in
Laser Diode 808 300 mw
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TO18 Laser 808nm 300 mw
Abstract: 808nm laser diode diode laser 808nm 200mW 808nm pad to18 Laser Diode 250mW p1875mw laser diode bare chip
Text: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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SLD-808-P200-C-03
808nm
886-3-485ard
200mW
250mW
125mW
TO18 Laser 808nm 300 mw
808nm laser diode
diode laser 808nm 200mW
pad to18
Laser Diode 250mW
p1875mw
laser diode bare chip
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LDM_0808_300M_91
Abstract: No abstract text available
Text: LDM-0808-300m-91 TECHNICAL DATA High Power Infrared Laser Diode Features • CW Output Power: 300 mW • Typical 808 nm Emission Wavelength • High-efficiency Quantum Well Structure • TO5 Package Applications • Solid-state Laser Pumping • Medical Usage
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LDM-0808-300m-91
LDM_0808_300M_91
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808 nm
Abstract: RLDB808-300-3
Text: RLDB808-300-3 TECHNICAL DATA Infrared Diode Laser Module Thechnical Parameters : • • • • • • • • • • • • • Size: Ø 22 mm x 65 mm Wavelength: 808 nm Operating Voltage: DC 3 V DC 5 V on request Operating Current : ≤250 mA Divergence : 0.3 mrad
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RLDB808-300-3
RLDB808-120-3
808 nm
RLDB808-300-3
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JDSU CQF935 DFB
Abstract: CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
Text: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an
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CQF935/808
RWR-030-42-01083-WWM,
JDSU CQF935 DFB
CQF935
JDS uniphase CQF935
uniphase CQF935
Laser Diode 808 2 pin 1000 mw
datasheets JDS uniphase CQF935
808 nm 1000 mw 2 pins
GR-468-CORE
808 nm 1000 mw laser diode
JDSU CQF935
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JDSU CQF935 DFB
Abstract: JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
Text: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an
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CQF935/808
JDSU CQF935 DFB
JDSU CQF935
JDS uniphase CQF935
uniphase CQF935
CQF935
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Laser Diode 808 2 pin 1000 mw
Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Text: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm
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MM-222-037-261-42UM
Abstract: No abstract text available
Text: New red and IR laser diodes Roithner Lasertechnik proudly presents several new laser diodes in the red and infrared wavelength range. S6430MG, 640 nm, 30 mW, sm, 50 °C, 5.6 mm, datasheet S66100MG, 660 nm, 100 mW, mm, 50 °C, 5.6 mm, datasheet S66150MG, 660 nm, 150 mW, mm, 50 °C, 5.6 mm, datasheet
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S6430MG,
S66100MG,
S66150MG,
S808500MG,
S8081WG,
S8350MG,
S83100MG,
S83300MG,
S83500MG,
S85100MG,
MM-222-037-261-42UM
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Untitled
Abstract: No abstract text available
Text: 808/830 nm Broad Area Laser Diode Product Family Specification Sheet The M8xx series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is
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D-82140
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laser diode 200mw to-18
Abstract: 200MW
Text: LCA808200M9N Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS Tc=25 oC Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 200 mW CW • Threshold Current : 80 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) DESCRIPTION
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LCA808200M9N
200mW
200mW
lca808200m9n
laser diode 200mw to-18
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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1090D
Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
M-248
LO-11)
1090D
1000mW laser
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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808 nm 1000 mw
Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323V
SLD323V
SLD300
structur00
M-248
LO-11)
808 nm 1000 mw
1000mW laser diode
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-25
SLD323V-3
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 808nm Single Fiber Output Dual-Wavelength Laser Diodes BLD-81-tt-2W-14-F-f-c-l-22 BLD-81-tt-4W-14-F-f-c-l-22 BLD-81-tt-5W-14-F-f-c-l-22 BLD-81-tt-8W-14-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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808nm
BLD-81-tt-2W-14-F-f-c-l-22
BLD-81-tt-4W-14-F-f-c-l-22
BLD-81-tt-5W-14-F-f-c-l-22
BLD-81-tt-8W-14-F-f-c-l-22
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SLD323XT
Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Text: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323XT
SLD323XT
SLD300
65MAX
M-273
LO-10)
1000mW laser
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-25
SLD323XT-3
808 nm 1000 mw laser diode
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808 nm 100 mw
Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.
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SLD323V
SLD323V
SLD300
M-248
LO-11)
808 nm 100 mw
SLD323V-1
SLD323V-2
SLD323V-21
SLD323V-24
SLD323V-3
1000mW laser diode
808 nm 1000 mw
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Untitled
Abstract: No abstract text available
Text: rev.1.0 16.03.2015 S8081WG Description S8081WG is a infrared laser diode emitting at typically 808 nm with rated output power of 1 W cw, in a standard 9 mm TO package with flat window cap. Maximum Ratings T CASE = 25°C Parameter Symbol Values Unit Output power
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S8081WG
S8081WG
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SLD300
Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.
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SLD323XT
SLD323XT
SLD300
M-273
LO-10)
65MAX
M-273
SLD323XT-1
SLD323XT-2
SLD323XT-21
SLD323XT-24
SLD323XT-3
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808nm 500mw
Abstract: ADL-80V01NL 808nm 500mw laser diode 80V01 C 828
Text: AlGaAs Infrared Laser Diode ADL-80V01NL DATE：2006/03/02 Ver 2.0 ★808nm 500mW 9φ TO-Type High Power Laser Diode • Features 1. Low operation current 2. Cost effective • Applications 1. Pumps for solid state lasers 2. Medical use • Absolute maximum ratings
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ADL-80V01NL
DATE2006/03/02
808nm
500mW
divers-vis/ari/808nm/
adl-80v01nl
808nm 500mw
808nm 500mw laser diode
80V01
C 828
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808nm 500mw
Abstract: ADL-80V03TL 80V03
Text: ADL-80V03TL Infrared Laser Diode 6-2D-LD80-010_Rev.00 808nm 500mW High Power Operation • Features 1. Low operation current 2. High pumping efficiency 3. Stable wavelength 4. High reliability • Applications 1. Pumping source for DPSS green laser 2. Medical applications
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ADL-80V03TL
6-2D-LD80-010
808nm
500mW
divers-vis/ari/808nm/
adl-80v03tl
808nm 500mw
80V03
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PLOD'S 1Ô E D • Ô3ÔS3Ô3 000200*1 fl SLD 301W Sony 100 mW High Power Laser Diode h e lim in a ry T -4 1 -0 5 Unit: mm Package Outline Description The SLD 301W is a gain-guided high-power laser diode fabricated by MOCVD. Features • High Power Po= 100 mW
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00G2GT0
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laser 790 nm sony 8 mw
Abstract: No abstract text available
Text: SONY SLD323V High Power Density 1W Laser Diode Description The SLD 323V is a high power, gain-guided laser diode produced by M O C V D method*1. Com pared to the SLD 300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by Q W -SC H structure*2.
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SS-00259,
SLD323V
net/Sonylnfo/procurementinfo/ss00259/
M-248
LO-11)
laser 790 nm sony 8 mw
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ntc 80-9
Abstract: Thermistor NTC-10 NTC 15 KM ntc 1,0
Text: SIEMENS SFH 487401 SFH 487406 808 nm InAIGaAs LASER DIODE 1000 mW with FC-connector 750 mW^ FEATURES • • • • * SFH487401 : Mlcrooptlca for Improved Farfleld Pattern • SFH487406: Mlcrooptlca for Efficient Fiber Coupling • Package: To 220-Package
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SFH487401
SFH487406:
220-Package
SFH487401--
SFH487406--
SFH487401Æ
SFH487401
SFH487406
SFH487406
ntc 80-9
Thermistor NTC-10
NTC 15 KM
ntc 1,0
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808nm laser
Abstract: 808nm 500mw 808nm 500mW laser diode 9mm
Text: LUMEX laser diodes 808nm OED-LDH8004F OED-LDH8005F Features • • • • Visible lig h t: X - 808 nm Typ. Output power: 200mW/500mW, CW High Efficiency MOCVD Quantum Well Design Standard TO-5 package (9mm 0 ) Applications • Diode pump solid state laser
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808nm
OED-LDH8004F
OED-LDH8005F
200mW/500mW,
OED-LDH8004F
OED-LDH8005F
200mW
808nm laser
808nm 500mw
808nm 500mW laser diode 9mm
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