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    LAND PATTERN FOR TSOP IDT Search Results

    LAND PATTERN FOR TSOP IDT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    LAND PATTERN FOR TSOP IDT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options


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    IDT71V256SA 10/12/15/20ns 28-pin IDT71V256SA 144-bit 727-C11« 492-M74 10-U4-2070 PDF

    Untitled

    Abstract: No abstract text available
    Text: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise


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    V424S IDT71V424L 10/12/15ns 36-pin, 44-pin, IDT71V424 304-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: jd t Integrated Device Technology, Inc. 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K 32K x 8-BIT) IDT71V256SB FEATURES DESCRIPTION • Ideal for high-perform ance processor secondary cache • Fast access tim es: — 12/15/20ns • Inputs are 2.5V and LVTTL com patible: V ih = 1,8V


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    IDT71V256SB T71V256SB 144-bit IDT71V256SB IDT71V256SA. 727-C11« 492-M 4A25771 PDF

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


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    IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit PDF

    DD27D

    Abstract: land pattern for TSOP 2 50 MB257 TM 1828
    Text: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin


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    16-BIT IDT71V008 10/12/15/20ns 44-pin IDT71V008 288-bit 910-338-207Q DD27D land pattern for TSOP 2 50 MB257 TM 1828 PDF

    woy transistor

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128KX IDT71T024L 150ns, 200ns 32-pin IDT71T024L 576-bit 10-338-207Q woy transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128Kx IDT71V024L T71V024L 576-bit 10-338-207Q PDF

    land pattern for TSOP 2 44 PIN

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128Kx IDT71V024L 100ns 32-pin T71V024L 576-bit 10-338-207Q land pattern for TSOP 2 44 PIN PDF

    land pattern for TSOP 2 44 PIN

    Abstract: com 6116 e2 CHN 920
    Text: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • JED E C revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle tim es


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    9/10/12/15/20ns 32-pin 400-m 32pin IDT71V124SA T71V124 576-bit land pattern for TSOP 2 44 PIN com 6116 e2 CHN 920 PDF

    land pattern for TSOP 2 54 pin

    Abstract: TSOP 54 land pattern AS7C1024 AS7C31024 land pattern for TSOP 2 44 PIN
    Text: H igh P erfo rm an ce •■ 128Kx8 A S7C 1024 A S7C 31024 H CMOS SRAM 1 2 8 K X 8 CM O S SRAM C o m m o n I / O Features • O rg a n iz a tio n : 1 3 1 ,0 7 2 w o rd s x 8 b its • H ig h sp e ed - 3 0 0 m il PDIP a n d SOJ - 1 0 / 1 2 / 1 5 / 2 0 n s ad d ress access tim e


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    AS7C1024 128Kx8 AS7C31024 32-pin 7C512 64Kx8) 2S6/272 1-10007-A. T00344C] land pattern for TSOP 2 54 pin TSOP 54 land pattern land pattern for TSOP 2 44 PIN PDF

    ln 3624

    Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
    Text: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times


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    256Kx 16-BIT) IDT71V416 8/10/12/15ns 44-pin, IDT71V416 194304-bit high-reliabil005 MS-027, ln 3624 ansi y14.5m-1982 decimal .xxxx 71V416S15 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)


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    128KX IDT71T024 150ns, 200ns 10jxA 32-pin, 46-BALL IDT71T024 576-bit 10-338-207Q PDF

    ed9a

    Abstract: woy transistor
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)


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    128KX IDT71T024 150ns, 200ns 10jxA 32-pin, 46-BALL IDT71T024 576-bit 10-338-207Q ed9a woy transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


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    128Kx IDT71L024 100ns 32-pin, 46-BALL T71L024 576-bit 910-338-207Q PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


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    IDT71124 12/15/20ns 32-pin IDT71124 576-bit MO-061, S5771 PDF

    TIP 3771

    Abstract: 3771 E1 3771 8 pin ic
    Text: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


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    16-BIT) IDT71L016 100ns 10jxA 44-pin 46-BALL IDT71L016 576-bit TIP 3771 3771 E1 3771 8 pin ic PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


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    16-BIT) IDT71T016 150ns, 200ns 10jxA 44-pin 46-BALL IDT71T016 576-bit 10-338-207Q PDF

    s0324

    Abstract: land pattern for TSOP idt IDT land pattern tsop 6
    Text: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for


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    IDT71124 12/15/20ns 32-pin 576-bit MO-061, PSC-4033 s0324 land pattern for TSOP idt IDT land pattern tsop 6 PDF

    R50-E2Y2-24

    Abstract: sk 8085 84 pin plcc ic base Aromat TQ2E-24V UT1553BCRTM INTEL 486 dx2 soic40 plcc44 pinout numbers XE4006E 68hc001
    Text: Ironwood Electronics PC.1 IC Package and Device Converters We offer over 500 adapters for converting IC packaging and device pinouts, solving many IC availability and performance issues. We also offer "fix" adapters to solve layout problems and some known chip deficiences. Custom, quick turn solutions are our speciality.


    Original
    PC-ZIP/DIP20-01 PC-ZIP/DIP28-01 PC-ZIP/DIP28-02 PC-ZIP20/DIP18-01 R50-E2Y2-24 sk 8085 84 pin plcc ic base Aromat TQ2E-24V UT1553BCRTM INTEL 486 dx2 soic40 plcc44 pinout numbers XE4006E 68hc001 PDF

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion


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    HY29F400T/B 48-Pin HY29F400 16-Bit) G-90I T-90I, R-90I G-90E, T-90E, R-90E PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE D e sc rip tio n F e a tu re s • High-speed access - Commercial: 20/25/35/45/55/70ns max. • Low-power operation - IDT71342SA Active: 700mW(typ.) Standby: 5m W (typ.) - ID T 7 1 3 4 2 S A /L A IDT71342LA


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    20/25/35/45/55/70ns IDT71342SA 700mW IDT71342LA T71342 492-M PDF

    land pattern for TSOP idt

    Abstract: ls 74 79 flip flop
    Text: HIGH-SPEED 16K X 16 DUAL-PORT STATIC RAM IDT7026S/L Features * * * * plexed bus compatibility IDT7026 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one d e v ic e _ ♦ M/S = H for BUSY output flag on Master,


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    DT7026S/L 20/25/35/55ns 15/20/25/35/55ns IDT7026S 750mW IDT7026L IDT7026 ZZ00000D000DDD0 PSC-4008 land pattern for TSOP idt ls 74 79 flip flop PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V08S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access * - * Low-power operation - ♦ Com m ercial: 15/20/25/35ns max. ID T70V08S


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    IDT70V08S/L 15/20/25/35ns T70V08S IDT70V08L IDT70V08 492-M PDF