600v 75a
Abstract: ntc 2,0 robot control PS18 SV18 80C154
Text: VIO 125-12P1 VID 125-12P1 VDI 125-12P1 IC25 = 138 A VCES = 1200 V VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK 10 IK10 VID X15 SV18 L9 S18 X16 X15 L9 T16 IK10 X16 AC1 LMN 9
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125-12P1
121T120
600v 75a
ntc 2,0
robot control
PS18
SV18
80C154
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PS18
Abstract: SV18
Text: VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IC25 = 169 A = 1200 V VCES VCE sat typ. = 2.9 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 SV18 L9 S X16 X15 L9 T16 IK10 X16 AC1 LMN NTC F1
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160-12P1
160-12P1
156T120
PS18
SV18
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ps18
Abstract: SV18
Text: VID 125-12P1 VIO 125-12P1 VDI 125-12P1 IC25 = 138 A = 1200 V VCES VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 SV18 L9 S X16 X15 L9 T16 IK10 X16 AC1 LMN NTC F1
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125-12P1
125-12P1
121T120
ps18
SV18
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IGBT 1500
Abstract: ntc 2,0 power supply 13v 100a robot control PS18 SV18
Text: VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IC25 = 169 A VCES = 1200 V VCE sat typ. = 2.9 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK 10 IK10 VID X15 SV18 L9 S18 X16 X15 L9 T16 IK10 X16 AC1 LMN 9
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160-12P1
160-12P1
156T120
IGBT 1500
ntc 2,0
power supply 13v 100a
robot control
PS18
SV18
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transistor NTC 1,0
Abstract: 206 100 psig
Text: ECO-PACTM 2 IGBT Module PSIG 130/06 PSIS 130/06* PSSI 130/06* PSI 130/06* IC25 = 121 A VCES = 600 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet L9 E2 NTC X15 K10 X16 NTC VX 18 X16 PSI 130/06* IK 10 NTC L9 T16 X15 X13
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germanium transistor pnp
Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies
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WiOO/25A
2N240
uG-491A/U,
MIL-S-19500/25B
15SUE.
10UAL
germanium transistor pnp
GERMANIUM TRANSISTOR
2N240
S236
de-01 germanium transistor
boonton 91-6c
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ISL9H2060EG3
Abstract: LD26 igbt 400V 20A
Text: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS
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ISL9H2060EG3
ISL9H2060EG3
LD26
igbt 400V 20A
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transistor P18
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25
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40D/06
B25/50
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g0650
Abstract: No abstract text available
Text: VII 130-06P1 IC25 = 121 A VCES = 600 V VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet OP9 VII L9 GH10 X13 E2 NTC B3 X15 Pin arangement see outlines VX18 K10 X16 Features IGBTs Symbol Conditions
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130-06P1
PaB25/50
g0650
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PS18
Abstract: No abstract text available
Text: VDI 100-06P1 VII 100-06P1 VID 100-06P1 VIO 100-06P1 IC25 = 93 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 L9 G10 X15 X16 F1 NTC Pin arangement see outlines Features
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100-06P1
100-06P1
B25/50
PS18
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R1560P2
Abstract: No abstract text available
Text: ISL9R1560P2 Data Sheet Title L9 560 bje A, 0V alth ode) utho eyw s tersi File Number 4913.2 15A, 600V Stealth Diode Features The ISL9R1560P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R1560P2
ISL9R1560P2
R1560P2
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NTC 303
Abstract: robot control PS18 SV18
Text: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN
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130-06P1
130-06P1
NTC 303
robot control
PS18
SV18
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25t120
Abstract: PS18 SV18 NTC 279 T 200
Text: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines
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25-12P1
25-12P1
25T120
25t120
PS18
SV18
NTC 279 T 200
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237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
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50-06P1
25T60
237td
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eco-pac
Abstract: transistor P18
Text: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 ID25 VDSS RDSon PSHM 40/06 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 L9 P18 R18 K12 A1 E10 F10 NTC Preliminary Data Sheet
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50-12P1
Abstract: PS18 SV18
Text: VDI 50-12P1 VID 50-12P1 VII 50-12P1 VIO 50-12P1 IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X16 X15 L9 T16 NTC n IK10 Pin arangement see outlines Features
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50-12P1
42T120
50-12P1
PS18
SV18
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TRANSISTOR Outlines
Abstract: inductive sensor SYMBOL robot control PS18 SV18 5006p1
Text: VDI 50-06P1 VID 50-06P1 VII 50-06P1 VIO 50-06P1 IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X16 X15 L9 T16 NTC n IK10 Pin arangement see outlines Features
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50-06P1
25T60
TRANSISTOR Outlines
inductive sensor SYMBOL
robot control
PS18
SV18
5006p1
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50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
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50-12P1
42T120
50-12P1
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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120D/01
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VKM 40-06P1
Abstract: CoolMOS Power Transistor 10P18
Text: VKM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET 1 Package with Electrically Isolated Base L4 L6 Preliminary data K 12 A1 L9 E 10 P 18 R 18 NTC F 10 X 15 K 10 K 13
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40-06P1
B25/50
VKM 40-06P1
CoolMOS Power Transistor
10P18
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NF 022
Abstract: 200NS160
Text: VID 125-12P1 VIO 125-12P1 VDI 125-12P1 IC25 = 138 A = 1200 V VCES VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 NTC X16 X15 L9 F1 IK10 X16 AC1 LMN NTC F1 B3 PS18
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125-12P1
125-12P1
121T120
NF 022
200NS160
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2N1050A
Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Text: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A
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000D12S
MIL-S-l9500/176B
MIL-S-19500/176A
2N1047A,
2N1048A,
2N1049A
2N1050A
2N1047A
2N1048A
2N1050A
T 3036
2n1048
2N1049
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mm4018
Abstract: No abstract text available
Text: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli cations in military and industrial equipment. Suitable for use as
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MM4018/D
mm4018
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