L7C164PC35 Search Results

L7C164PC35 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L7C164PC35		Logic Devices	16K x 4 Static RAM		Scan	PDF

L7C164PC35 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
s2ld Abstract: MA 166s Text: . i O <I!!H € •Hi L 7 C 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns	OCR Scan	PDF	MIL-STD-883, L7C164 L7C166 CY7C164/166 22/24-pin 24-pin 22-pin 28-pin L7C164/165/166 s2ld MA 166s
Untitled Abstract: No abstract text available Text: L7C164/165/166 16K x 4 Static RAM DESCRIPTION FEATURES The L7C164, L7C165, and L7C166are high-performance, low -pow er CMOS static RAMs. The storage cells are organized as 16,384 w ords by 4 bits per w ord. Data In and Data Out signals share I/O pins. TheL7C164	OCR Scan	PDF	CY7C164/166 22/24-pin 24-pin 22-pin 28-pin L7C164/165/166 L7C164,
Untitled Abstract: No abstract text available Text: V 1' 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns	OCR Scan	PDF	CY7C164/166 22/24-pin 24-pin 22-pin 28-pin L7C164/165/166 L7C164,
L7C164PC85 Abstract: L7C164PC25 8A720 ma 8630 L7C164PC35 L7C164PC45 Text: L7C164/165/166 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM with common I/O □ Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns Standby: 50 xW typical	OCR Scan	PDF	L7C164/165/166 CY7C164/166 22/24-pin 24-pin L7C164, L7C165, L7C166 L7C164PC85 L7C164PC25 8A720 ma 8630 L7C164PC35 L7C164PC45
Untitled Abstract: No abstract text available Text: 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 / 1 6 6 Features Description_ □ 16K by 4 Static RAM with common I/O Q Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 20 ns worst-case □ Low Power Operation Active: 285 mW typical at 45 ns	OCR Scan	PDF	L7C164, L7C165, L7C166 L7C164 L7C165 L7C166
ez619 Abstract: 55CCT 1ewd Text: LOGIC DEVICES INC 2bE » • SStSIQS 0001052 7 ■ r - 16K x 4 Static RAM I FEATURES L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION \| □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown'04 Design □ Advanced CMOS Technology Q High Speed— to 8 ns maximum Q Low Power Operation	OCR Scan	PDF	0G01Q22 L7C164/165/166 CY7C164/166 22/24-pin 24-pin 22-pin 28-pin ez619 55CCT 1ewd