Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L64 PACKAGE DIAGRAM Search Results

    L64 PACKAGE DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    L64 PACKAGE DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FCT825BT

    Abstract: 74fct825t 74FCT821 CY74FCT825BTSOC CY74FCT823
    Text: CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T 8Ć/9Ć/10ĆBit Bus Interface Registers D Features D Functional Description with clock enable EN and clear (CLR)Ċideal for parity bus interfacing in highĆperformance microprogrammed sysĆ tems. The FCT825T is an 8Ćbit buffered


    Original     		CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T 8/9/10Bit FCT825T FCT823T FCT821T 10bit FCT825BT 74fct825t 74FCT821 CY74FCT825BTSOC CY74FCT823 PDF

    7C261

    Abstract: 7c264 CY7C261-35WC C2617 cerdip z PACKAGE CY7C263-35DMB CY7C261 CY7C263 CY7C264 7C261-45
    Text: 1 CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,


    Original     		CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 8192-word 7C261 300-mil-wide 7C263 7C264 CY7C261-35WC C2617 cerdip z PACKAGE CY7C263-35DMB CY7C261 CY7C263 7C261-45 PDF

    CERPACK K73

    Abstract: 5962-9452201MXX 5962-8606320QXA cypress palce22v10 programming guide CY54FCT373CT CE22V1 cy27c256a-250wmb LCC 20.3 30MMA CY6116A-55DMB
    Text: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability


    Original     		PALCE22V10 181-MHz 110-MHz 15-ns 25-ns Apr-98 01Q3A CY7B991-7LMB 01MXX CERPACK K73 5962-9452201MXX 5962-8606320QXA cypress palce22v10 programming guide CY54FCT373CT CE22V1 cy27c256a-250wmb LCC 20.3 30MMA CY6116A-55DMB PDF

    C2613

    Abstract: C2614 c2615 C2611 C2617 7C261 7C264 CY7C261 CY7C263 CY7C264
    Text: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263


    Original     		CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 8192-word 7C261 300-mil-wide 7C263 7C264 C2613 C2614 c2615 C2611 C2617 CY7C261 CY7C263 PDF

    CY7C292A

    Abstract: CY7C293A CY7C291A
    Text: CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM D Features D D Windowed for reprogrammability D CMOS for optimum speed/power ic discharge High speed Ċ Ċ Functional Description The CY7C291A, CY7C292A, and CY7C293A are highĆperformance 2KĆ word by 8Ćbit CMOS PROMs. They are


    Original     		CY7C291A CY7C292A/CY7C293A CY7C291A, CY7C292A, CY7C293A 300mil 7C291A, 7C293A) 600mil 7C292A) CY7C292A CY7C291A PDF

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: cerdip z PACKAGE DIODE SMD A6 cy7c291 CY7C293A-30QMB PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC w14 smd transistor CY7C291A CY7C292A CY7C293A
    Text: 1CY 7C29 2A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an


    Original     		CY7C291A CY7C292A/CY7C293A 300-mil 7C291A, 7C293A) 600-mil 7C292A) CY7C293A 300-mil CERAMIC LEADLESS CHIP CARRIER cerdip z PACKAGE DIODE SMD A6 cy7c291 CY7C293A-30QMB PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC w14 smd transistor CY7C291A CY7C292A PDF

    CY7C263-35jc

    Abstract: IKN0803000 7C261 CY7C261-25QMB 7C264 CY7C261 CY7C263 CY7C264
    Text: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,


    Original     		CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 8192-word 7C261 300-mil-wide 7C263 7C264 CY7C263-35jc IKN0803000 CY7C261-25QMB CY7C261 CY7C263 PDF

    CY7C291A

    Abstract: CY7C292A CY7C293A
    Text: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial • • • • • • Functional Description The CY7C291A, CY7C292A, and CY7C293A are high-performance 2K-word by 8-bit CMOS PROMs. They are functionally


    Original     		CY7C291A CY7C292A/CY7C293A CY7C291A, CY7C292A, CY7C293A A0-A10) CY7C291A CY7C292A PDF

    C2614

    Abstract: CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4
    Text: CY7C261 CY7C263/CY7C264 D Features PROMs 20 ns commercial Functional Description 25 ns (military) Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 220 mW when deselected Fast access: 20 ns EPROM technology 100% programĆ


    Original     		CY7C261 CY7C263/CY7C264 7C261) 300mil 600mil C2614 CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4 PDF

    CY74FCT2646CTPC

    Abstract: FCT646T
    Text: CY54/74FCT2646T CY54/74FCT2648T 8ĆBit Registered Transceivers D Features D output logic levels Function and pinout compatible with D FCT and F logic D Fully compatible with TTL input and Sink current 12 mA Com'l , Source current 15 mA (Com'l), 12 mA (Mil)


    Original     		CY54/74FCT2646T CY54/74FCT2648T FCT2646T FCT2648T CY74FCT2646CTPC FCT646T PDF

    CYPRESS 7C291A

    Abstract: CY7C293AL-35PC cy7c291 CY7C291A-25WMB CY7C291A CY7C292A CY7C293A
    Text: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an


    Original     		CY7C291A CY7C292A/CY7C293A 300-mil 7C291A, 7C293A) 600-mil 7C292A) CY7C293A 300-mil CYPRESS 7C291A CY7C293AL-35PC cy7c291 CY7C291A-25WMB CY7C291A CY7C292A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Autom atic power-down when deselected • CMOS for optim um speed/power • High speed T he CY7C171A and CY7C172A are highperformance CMOS static RAMs orga­


    OCR Scan     		CY7C171A CY7C172A 7C172A 7C171A 38-00104-B PDF

    CY7C171A

    Abstract: CY7C172A K73 Package
    Text: 4bE D 256=1^2 GGGbSBT T ESCYP ' CYPRESS SEMICONDUCTOR T 7 c f f a l 5 - G CY7C171A CY7C172A 8 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — tAl\ = 15 ns


    OCR Scan     		CY7C171A CY7C172A 7C171A) CY7C172A redK73 T-46-23-08 awe1131 K73 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power


    OCR Scan     		CY7C171A CY7C172A 7C171A) 7C172A 7C171A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)


    OCR Scan     		CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A CY7C292Aâ 35DMB CY7C293Aâ PDF

    02JX

    Abstract: cy7c291 CY7C291A CY7C292A CY7C293A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode
    Text: Y P R E S S SEMICONDUCTOR 4bE » D S SflU b a 'T^fc-13-Z* CYPRESS SEMICONDUCTOR Features • Windowed for «program m ability • CMOS for optimum speed/power • High speed -¡•20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)


    OCR Scan     		CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A CY7C291â 50TMB 02JX cy7c291 CY7C291A CY7C292A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected T h e CY7C171A and CY7C172A are highperform ance C M O S static R A M s orga­ nized as 4096 by 4 bits with separate I/O .


    OCR Scan     		CY7C171A CY7C172A 7C17IA) 7C172A 7C171A PDF

    CY7C171-45VC

    Abstract: CY7C171-35PC 7c172
    Text: CY7C171 CY7C172 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected T h e CY7C171 and CY7C172 are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 hits with separate I/O. Easy memory expansion is provided by an


    OCR Scan     		CY7C171 CY7C172 7C171) 7C171 38-00036-E CY7C171-45VC CY7C171-35PC 7c172 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C171 _CY7C172 CYPRESS ,.= ^ = SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed T he CY7C171 and CY7C172 are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits with separate I/O.


    OCR Scan     		CY7C171 CY7C172 CY7C171 CY7C172 7C171) 7C171 38-00036-E PDF

    CY7C171-45VC

    Abstract: 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq
    Text: 4 bE D • 23 3 *^ 2 QDOtSBB =5 E ICYP *0VH <O -V?<y& s? CYPRESS SEMICONDUCTOR CY7C171 CY7C172 4096 x 4 Static R/W RAM Separate I/O R eading th e device is accom plishedby tak­ ing chip enable CE LOW, while write en­ able (W E) remains H IG H . U nder these con­


    OCR Scan     		7C171) CY7C171 CY7C172 4096x4 stayY7C172-45PC CY7C172-45DC CY7C172-45LC CY7C172-45VC CY7C172-45DMB CY7C172-45LMB CY7C171-45VC 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq PDF

    l 9113

    Abstract: No abstract text available
    Text: CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T V CYPRESS Features 8-/9-/10-Bit Bus Interface Registers • Sink current • Function, pinout and drive compatible with FCT, F, and Am29821/23/25 logic • FCT-C speed at 6.0 ns max. Com’l FCT-B speed at 7.5 ns max. (Com’l)


    OCR Scan     		Am29821/23/25 CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T 8-/9-/10-Bit 300-Mil) 24-Lead 28-Square l 9113 PDF

    6117a

    Abstract: MA 6116A dc 6117a CY6116A-55DMB
    Text: CY6116A CY6117A CYPRESS SEMICONDUCTOR Functional Description Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20 ns Low active power — 550 mW 1 Low standby power — 110 mW TTL-compatible inputs and outputs Capable of withstanding greater


    OCR Scan     		CY6116A CY6117A CY6117A 0105-A 6117a MA 6116A dc 6117a CY6116A-55DMB PDF

    7C261

    Abstract: 7c264
    Text: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower


    OCR Scan     		7C261) 300-mil 600-mil CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 24-Lead 7C261 7c264 PDF

    7C261

    Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
    Text: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power


    OCR Scan     		Ob704 CY7C261 CY7C263/CY7C264 7C261) 300-mil 600-mll CY7C261, CY7C263, CY7C264 8192-word 7C261 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB DIODE SMD W12 75 C261 PDF