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    L6 EPITAXIAL TRANSISTOR Search Results

    L6 EPITAXIAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L6 EPITAXIAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23

    DRAF143X

    Abstract: No abstract text available
    Text: DRAF143X Tentative Total pages page DRAF143X Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L6 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRAF143X DRAF143X

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7

    dra2143X

    Abstract: sot-23 l6
    Text: DRA2143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143X Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L6


    Original     		PDF DRA2143X DRC2143X UL-94 DRA2143X0L SC-59A O-236ts. dra2143X sot-23 l6

    L6 TRANSISTOR

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


    Original     		PDF 2SC1623 200TYP OT-23 BL/SSSTC0018 L6 TRANSISTOR

    2SC1623

    Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


    Original     		PDF 2SC1623 200TYP OT-23 BL/SSSTC0018 2SC1623 L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23

    L6 TRANSISTOR

    Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.


    Original     		PDF 2SC4177W 2SA1611. OT-323 BL/SSSTF039 L6 TRANSISTOR l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot

    SOT-323 marking L6

    Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.


    Original     		PDF 2SC1623W 200TYP. 200mW) OT-323 BL/SSSTF035 SOT-323 marking L6 l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF MPSH10 MPSH10 MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number


    Original     		PDF MPSH10A MPSH10A MPSH10A-x-T92-B MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10A-x-T92-K MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF MPSH10A MPSH10A MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065

    mpsh10

    Abstract: MPS-H10 MPSH10G transistor l2
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number Normal


    Original     		PDF MPSH10 MPSH10 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10-x-T92-K MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 MPS-H10 MPSH10G transistor l2

    MPSH10 H parameters

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Ordering Number


    Original     		PDF MPSH10 MPSH10 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10-x-T92-K MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 MPSH10 H parameters

    MPSH10 datasheet

    Abstract: 100MHZ MPSH10
    Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		PDF MPSH10 MPSH10 1000pF 8-10pF 100pF 0-18pF MPSH10 datasheet 100MHZ

    MPSH10 datasheet

    Abstract: UTC200 MPSH10 100MHZ
    Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		PDF MPSH10 MPSH10 QW-R201-022 MPSH10 datasheet UTC200 100MHZ

    UTC200

    Abstract: 100MHZ MPSH10 MPSH10A
    Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		PDF MPSH10 MPSH10A QW-R201-065 UTC200 100MHZ

    L6 TRANSISTOR

    Abstract: transistor L6
    Text: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5


    Original     		PDF 2SC5585 RB521S-30 200mA 200mA, 100MHz L6 TRANSISTOR transistor L6

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6

    MARKING SA transistor

    Abstract: marking code ER transistor KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 D02S10S MARKING SA transistor marking code ER transistor KST1623L6

    L6 TRANSISTOR

    Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 L6 TRANSISTOR transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 KST1623O

    leaa

    Abstract: ts 1683 2SA1421
    Text: O rd e rin g n u m b e r: EN 1 6 8 3 A 2SA1421/2SC3654 N o .l6 83 A PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistor I •# Dae • Switching circuit, inverter circuit, interface oircu i^f/ür i ^ P c ^ r où


    OCR Scan     		PDF 2SA1421/2SC3654 2SA1421 leaa ts 1683 2SA1421

    12w 5d

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC3629 2SC3629 520MHz, 12w 5d