transistor mark l6
Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
transistor mark l6
KST1623L6
KST1623L3
KST1623L4
KST1623L5
KST1623L7
sot-23 Marking l7
SOT23 MARKING L7
marking L5 sot-23
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DRAF143X
Abstract: No abstract text available
Text: DRAF143X Tentative Total pages page DRAF143X Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L6 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143X
DRAF143X
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KST1623L7
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
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dra2143X
Abstract: sot-23 l6
Text: DRA2143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143X Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L6
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DRA2143X
DRC2143X
UL-94
DRA2143X0L
SC-59A
O-236ts.
dra2143X
sot-23 l6
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L6 TRANSISTOR
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
L6 TRANSISTOR
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2SC1623
Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
2SC1623
L6 TRANSISTOR
sot23 MARKING CODE L6
marking L6 sot23
L5 SOT23
l5 transistor
sot23 L4 marking
marking l4 sot-23
l6 sot23
l7 sot-23
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L6 TRANSISTOR
Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.
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2SC4177W
2SA1611.
OT-323
BL/SSSTF039
L6 TRANSISTOR
l4 transistor
SOT-323 marking L6
SOT-323 marking .L6
transistor marking L6
marking L6 SOT
2SA1611
2SC4177W
L4 SOT
marking l4 sot
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SOT-323 marking L6
Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.
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2SC1623W
200TYP.
200mW)
OT-323
BL/SSSTF035
SOT-323 marking L6
l4 transistor
SOT-323 marking .L6
2SC1623W
transistor marking L6
L6 TRANSISTOR
NPN Silicon Epitaxial Planar Transistor
marking L6 npn
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10
MPSH10
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10A
MPSH10A
MPSH10A-x-T92-B
MPSH10AL-x-T92-B
MPSH10AG-x-T92-B
MPSH10A-x-T92-K
MPSH10AL-x-T92-K
MPSH10AG-x-T92-K
QW-R201-065
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number
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MPSH10A
MPSH10A
MPSH10AL-x-T92-B
MPSH10AG-x-T92-B
MPSH10AL-x-T92-K
MPSH10AG-x-T92-K
QW-R201-065
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mpsh10
Abstract: MPS-H10 MPSH10G transistor l2
Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number Normal
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MPSH10
MPSH10
MPSH10-x-T92-B
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10-x-T92-K
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
MPS-H10
MPSH10G
transistor l2
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MPSH10 H parameters
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Ordering Number
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MPSH10
MPSH10
MPSH10-x-T92-B
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10-x-T92-K
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
MPSH10 H parameters
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MPSH10 datasheet
Abstract: 100MHZ MPSH10
Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER
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MPSH10
MPSH10
1000pF
8-10pF
100pF
0-18pF
MPSH10 datasheet
100MHZ
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MPSH10 datasheet
Abstract: UTC200 MPSH10 100MHZ
Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER
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MPSH10
MPSH10
QW-R201-022
MPSH10 datasheet
UTC200
100MHZ
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UTC200
Abstract: 100MHZ MPSH10 MPSH10A
Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C
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MPSH10
MPSH10A
QW-R201-065
UTC200
100MHZ
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L6 TRANSISTOR
Abstract: transistor L6
Text: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5
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2SC5585
RB521S-30
200mA
200mA,
100MHz
L6 TRANSISTOR
transistor L6
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transistor mark l6
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
transistor mark l6
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transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
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MARKING SA transistor
Abstract: marking code ER transistor KST1623L6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
D02S10S
MARKING SA transistor
marking code ER transistor
KST1623L6
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L6 TRANSISTOR
Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
L6 TRANSISTOR
transistor mark l6
transistor L7
l5 transistor
MARKING l7
l4 transistor
marking L6
l7 marking code
L6 IC
KST1623L6
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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OCR Scan
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PDF
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KST1623L3/L4/L5/L6/L7
KST1623O
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leaa
Abstract: ts 1683 2SA1421
Text: O rd e rin g n u m b e r: EN 1 6 8 3 A 2SA1421/2SC3654 N o .l6 83 A PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistor I •# Dae • Switching circuit, inverter circuit, interface oircu i^f/ür i ^ P c ^ r où
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2SA1421/2SC3654
2SA1421
leaa
ts 1683
2SA1421
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12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
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2SC3629
2SC3629
520MHz,
12w 5d
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