L5 TRANSISTOR PNP Search Results

L5 TRANSISTOR PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

L5 TRANSISTOR PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC 30mA Abstract: BSS65 l5 transistor PNP partmarking 6 Cc BSS65R DSA003680 Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 ✪ PARTMARKING DETAIL BSS65 - L1 BSS65R - L5 BSS65 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12	Original	BSS65 BSS65 BSS65R -10mA, -30mA, IC 30mA l5 transistor PNP partmarking 6 Cc DSA003680	PDF
bss65 Abstract: No abstract text available Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage	OCR Scan	BSS65 BSS65 -10mA,	PDF
L5 marking Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •	OCR Scan	1987M L5 marking	PDF
Untitled Abstract: No abstract text available Text: S0T23 PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS BSS65 - L1 BSS65R - L5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT V CBO -12 V V CEO -12 V Emitter-Base Voltage V EBO -4 V Peak Pulse Current 'c m -200 mA Continuous Collector Current	OCR Scan	S0T23 BSS65 BSS65R -10mA, -30mA, -30mA	PDF
RT1N434X Abstract: RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C RT1P434T2 Text: R T - I P434X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P434X is OUTLINE ä one chip transistor UNIT mm DRAWING R T1P 434C RT1P434U with b u ilt-in bias resistor.NPN type Is RT1N434X „ L5 0.35 0.$ 2 fl 03: 0JE5 15 Í.5& FEATURE	OCR Scan	RT-IP434X HT1P434X RT1N434X RT1P434T2 RT1P434M PT1P434C RT1N434X RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R 2bE F L 3ti7SS4 D QGTDSm 7 MOTOROLA SEMICONDUCTOR rT'-3>7-l5' TECHNICAL DATA PRELIMINARY DATA DM0 MRH1260PHXV, MRH1260PHS llllt ll PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR 60 VOLT, 5 AM PERE	OCR Scan	MRH1260PHXV, MRH1260PHS MIL-S-19500 10mAdc, 50Vdc MRH630PHXV	PDF
bi 370 transistor e Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7 Text: 3 875081 6 E SOLI D STATE 01 DE \| 3 ö 7 S 0 f l l DDITID? □ \| D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where	OCR Scan	D45VH D44VH 3fl750fll bi 370 transistor e D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH7	PDF
MJE2955T Abstract: MJE3055T MJE30*T MJE2955T ST mje3055T data Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and	Original	MJE2955T MJE3055T MJE3055T O-220 MJE2955T. O-220 MJE2955T MJE30*T MJE2955T ST mje3055T data	PDF
MJE3055T Abstract: l5 transistor PNP MJE305 MJE2955T SGS-Thomson P011C SGS-Thomson MJE3055T mje3055T data Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and	Original	MJE2955T MJE3055T MJE3055T O-220 MJE2955T. O-220 l5 transistor PNP MJE305 MJE2955T SGS-Thomson P011C SGS-Thomson MJE3055T mje3055T data	PDF
st marking code Abstract: No abstract text available Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier 3 1 2	Original	2STA1837 2STC4793 O-220FP st marking code	PDF
Untitled Abstract: No abstract text available Text: FMMT549 F A IR C H IL D S E M I C D N D U C T D R tm FMMT549 B SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturatior i voltage with collector currents up to 2A continuous. Absolute Maximum Ratings*	OCR Scan	FMMT549 OT-23)	PDF
Untitled Abstract: No abstract text available Text: 2STA1837 PNP power bipolar transistor Preliminary data Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequency, typical fT = 70 MHz Applications ■ Audio power amplifier ■ Drive stage amplifier s	Original	2STA1837 2STC4793 O-220FP	PDF
marking Z1 6pin Abstract: UMZ1N F MARKING 6PIN marking Z1 6-pin Text: UMZ1N IMZ1A Transistor, dual, NPN and PNP Features Dimensions U n its: mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages • package marking: UMZ1N and IMZ1A; Z1 • UMZ1N (UMT6) z .oto. z Fi^vl 0 65 I I 0.65 T t( 2r) r r un a n r package contains a PNP	OCR Scan	SC-74) 2SA1037AK) 2SC2412K) SC-70) SC-59) marking Z1 6pin UMZ1N F MARKING 6PIN marking Z1 6-pin	PDF
MSA035 Abstract: BFQ246 MSB002 Text: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.	OCR Scan	OT223 7110fl2b BFQ246 MSA035â OT223. 711005t. MSA035 BFQ246 MSB002	PDF

tip3055 Abstract: TIP2955 tip2955t transistor PNP TIP2955 morocco TIP3055 TIP2955 NPN power transistor TIP2955 DATA IP2955 l5 transistor PNP Text: TIP2955 TIP3055  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching	Original	TIP2955 TIP3055 TIP3055 O-218 TIP2955. O-218 IP2955 IP3055 TIP2955 tip2955t transistor PNP TIP2955 morocco TIP3055 TIP2955 NPN power transistor TIP2955 DATA IP2955 l5 transistor PNP	PDF
TIP33C Abstract: TIP34C Text: TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The TIP33C is a silicon Epitaxial-Base NPN power transistor mounted in TO-218 plastic	Original	TIP33C TIP34C TIP33C O-218 TIP34C. O-218 TIP34C	PDF
TIP33C Abstract: TIP34C IP33C Text: TIP33C TIP34C  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The TIP33C is a silicon Epitaxial-Base NPN power transistor mounted in TO-218 plastic	Original	TIP33C TIP34C TIP33C O-218 TIP34C. O-218 TIP34C IP33C	PDF
transistor PNP TIP2955 Abstract: TIP3055 TIP2955 NPN power transistor morocco TIP3055 TIP2955 TIP3055 NPN power transistor morocco TIP2955 transistor TIP3055 transistor TIP3055 SOT-93 "Shunt Regulators" Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon epitaxial-base planar NPN transistor mountend in TO-218 plastic package and intented for power switching	Original	TIP2955 TIP3055 TIP3055 O-218 TIP2955. O-218 transistor PNP TIP2955 TIP2955 NPN power transistor morocco TIP3055 TIP2955 TIP3055 NPN power transistor morocco TIP2955 transistor TIP3055 transistor TIP3055 SOT-93 "Shunt Regulators"	PDF
BDW83C Abstract: BDW84C COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington Text: BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL	Original	BDW83C BDW84C BDW83C O-218 BDW84C. O-218 BDW84C COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington	PDF
bdw84c Abstract: SILICON COMPLEMENTARY transistors darlington BDW83C Text: BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ BDW83C IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL	Original	BDW83C BDW84C BDW83C O-218 BDW84C. O-218 bdw84c SILICON COMPLEMENTARY transistors darlington	PDF
BDW83C Abstract: BDW84C BDW83 Text: BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL	Original	BDW83C BDW84C BDW83C O-218 BDW84C. O-218 BDW84C BDW83	PDF
2N6111 Abstract: No abstract text available Text: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is	Original	2N6111 2N6111 O-220 O-220 P011CI	PDF
LDTA143ZET1G Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA143ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an	Original	LDTA143ZET1G SC-89 463C-01 463C-02. LDTA143ZET1G	PDF
Untitled Abstract: No abstract text available Text: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is	Original	2N6111 2N6111 O-220 O-220	PDF

L5 TRANSISTOR PNP Search Results

L5 TRANSISTOR PNP Result Highlights (5)

L5 TRANSISTOR PNP Datasheets Context Search

IC 30mA

bss65

L5 marking

Untitled

RT1N434X

Untitled

bi 370 transistor e

MJE2955T

MJE3055T

st marking code

Untitled

Untitled

marking Z1 6pin

MSA035

tip3055

TIP33C

TIP33C

transistor PNP TIP2955

BDW83C

bdw84c

BDW83C

2N6111

LDTA143ZET1G

Untitled