Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel
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L2SC1623QLT1G
3000/Tape
L2SC1623QLT3G
10000/Tape
L2SC1623RLT1G
L2SC1623RLT3G
L2SC1623SLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel
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L2SC1623QLT1G
3000/Tape
L2SC1623QLT3G
10000/Tape
L2SC1623RLT1G
L2SC1623RLT3G
L2SC1623SLT1G
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L2SC1623QLT1G
Abstract: L2SC1623RLT1G L2SC1623SLT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel
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L2SC1623QLT1G
3000/Tape
L2SC1623QLT3G
10000/Tape
L2SC1623RLT1G
L2SC1623RLT3G
L2SC1623SLT1G
L2SC1623QLT1G
L2SC1623RLT1G
L2SC1623SLT1G
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transistor mark l6
Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
transistor mark l6
KST1623L6
KST1623L3
KST1623L4
KST1623L5
KST1623L7
sot-23 Marking l7
SOT23 MARKING L7
marking L5 sot-23
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L2SC1623QLT1
Abstract: L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G sot-23 Marking l7
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SC1623*LT1 ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. 3 ƽPNP complement: L2SA812 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Shipping L5 3000/Tape&Reel
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L2SC1623
L2SA812
3000/Tape
L2SC1623QLT1
L2SC1623QLT1G
L2SC1623QLT1
L2SC1623QLT1G
L2SC1623RLT1
L2SC1623RLT1G
L2SC1623SLT1
L2SC1623SLT1G
sot-23 Marking l7
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IC 30mA
Abstract: BSS65 l5 transistor PNP partmarking 6 Cc BSS65R DSA003680
Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 ✪ PARTMARKING DETAIL BSS65 - L1 BSS65R - L5 BSS65 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12
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BSS65
BSS65
BSS65R
-10mA,
-30mA,
IC 30mA
l5 transistor PNP
partmarking 6 Cc
DSA003680
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MOTOROLA ELECTROLYTIC CAPACITOR
Abstract: mrf255 MRF255 equivalent mrf255 mosfet motorola rf Power Transistor MOTOROLA TRANSISTOR 279 MRF255PHT Trimmer ARCO #464 motorola mosfet Trimmer ARCO
Text: MOTOROLA Order this document by MRF255PHT/D SEMICONDUCTOR TECHNICAL DATA MRF255 PHOTOMASTER The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode CASE 211–11, STYLE 2 RFC1 VGG + + C5 C6 C15 VDD + C16 C17 L5 RF INPUT N1 R2 C4
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MRF255PHT/D
MRF255
MRF255
MRF255PHT/D*
MOTOROLA ELECTROLYTIC CAPACITOR
MRF255 equivalent
mrf255 mosfet
motorola rf Power Transistor
MOTOROLA TRANSISTOR 279
MRF255PHT
Trimmer ARCO #464
motorola mosfet
Trimmer ARCO
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KST1623L7
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
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DRAF143E
Abstract: No abstract text available
Text: DRAF143E Tentative Total pages page DRAF143E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : L5 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRAF143E
DRAF143E
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Untitled
Abstract: No abstract text available
Text: DRA2143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143E Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L5
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DRA2143E
DRC2143E
UL-94
DRA2143E0L
SC-59A
O-236ts.
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FE5V-TA6
Abstract: FE5V-TB6-L10 IEC60255 FE5V-TB6-L3 IEC60255-5 daigram Yamatake FE5V-TA6-L3 FE5V-TA6-L2 FE5V-TA6-L10
Text: CATALOG LISTING FE5V-TA6 FE5V-TB6 FE5V-TA6-L2 FE5V-TB6-L2 FE5V-TA6-L3 FE5V-TB6-L3 FE5V-TA6-L5 FE5V-TB6-L5 FE5V-T A6-L10 FE5V-TB6-L10 3. C A B L E ; 0 3 CABLE LENGTH 1m 1m 2m 2m 3m 3m 5m 5m 1 Om 1 Om GRAY 0 . 1 8 mm 2 ( 1 6 /0.1 2 ) x 3 2. M ATERIALS ; CASE
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FE5V-TA6-L10
FE5V-TB6-L10
JEOOO-2119
200MQ
EN61000-4--2
EN61000-4--3
EN61000-4-6
EN61000-4--4-
IEC60255-5
FE5V-TA6
IEC60255
FE5V-TB6-L3
daigram
Yamatake
FE5V-TA6-L3
FE5V-TA6-L2
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transistor mark l6
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
transistor mark l6
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bss65
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage
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BSS65
BSS65
-10mA,
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transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
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k106 transistor
Abstract: IRC643 IRF642 IRF643 IRF642 ge C643
Text: IRF642,643 l5 116 AMPERES 200,150 VOLTS Rd S ON = 0.22 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability.
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IRF642
TC-26I
100ms
k106 transistor
IRC643
IRF643
IRF642 ge
C643
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MN1 transistor
Abstract: BUK436-200B LTO 100 F BUK436-200A
Text: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK436-200A/B
BUK436
-200A
-200B
71106Eb
MN1 transistor
BUK436-200B
LTO 100 F
BUK436-200A
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L6 TRANSISTOR
Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature
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KST1623L3/L4/L5/L6/L7
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
L6 TRANSISTOR
transistor mark l6
transistor L7
l5 transistor
MARKING l7
l4 transistor
marking L6
l7 marking code
L6 IC
KST1623L6
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 2bE F L 3ti7SS4 D QGTDSm 7 MOTOROLA SEMICONDUCTOR rT'-3>7-l5' TECHNICAL DATA PRELIMINARY DATA DM0 MRH1260PHXV, MRH1260PHS llllt ll PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR 60 VOLT, 5 AM PERE
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MRH1260PHXV,
MRH1260PHS
MIL-S-19500
10mAdc,
50Vdc
MRH630PHXV
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Untitled
Abstract: No abstract text available
Text: S0T23 PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS BSS65 - L1 BSS65R - L5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT V CBO -12 V V CEO -12 V Emitter-Base Voltage V EBO -4 V Peak Pulse Current 'c m -200 mA Continuous Collector Current
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S0T23
BSS65
BSS65R
-10mA,
-30mA,
-30mA
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hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”
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2PHX14226-31
hall marking code A04
M143206EVK
differences uc3842a uc3842b
toshiba satellite laptop battery pinout
2N3773 audio amplifier diagram
toshiba laptop battery pack pinout
BC413
motorola transistor sj 5812
M68HC705X16
ABB inverter motor fault code
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RT1N434X
Abstract: RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C RT1P434T2
Text: R T - I P434X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P434X is OUTLINE ä one chip transistor UNIT mm DRAWING R T1P 434C RT1P434U with b u ilt-in bias resistor.NPN type Is RT1N434X „ L5 0.35 0.$ 2 fl 03: 0JE5 15 Í.5& FEATURE
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RT-IP434X
HT1P434X
RT1N434X
RT1P434T2
RT1P434M
PT1P434C
RT1N434X
RT1P434M
RT1P434S
TRANSISTOR 1J5
RT1P434C
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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KST1623L3/L4/L5/L6/L7
KST1623O
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2n4033
Abstract: No abstract text available
Text: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,
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GQ312D7
37-l5
2N4030-2N4031
4032-2N
2N4030
2N4031,
2N4032,
2N4033
2N4030
2N4032
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L5 marking
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR HfCTBOM DEVICE FN1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M INI MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistor Built-in T Y P E 2.8 ± 0.2 O—W V 3 R i = 4 . 7 k£2 R1 0.65i8:l5 1.5 •
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1987M
L5 marking
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