Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L43 TRANSISTOR Search Results

    L43 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    L43 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    l43 transistor

    Abstract: transistor l43
    Text: 2.54mm .100" Pitch Transistor Sockets FEATURES AND SPECIFICATIONS Reference Information Packaging: Bulk Use With: 2759 and 6459 terminals Designed In: Inches Electrical Voltage: 250V Current: 4.0A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1500V AC


    Original     		PDF

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		PDF BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference

    l35 CAPacitor

    Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices
    Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features


    Original     		PDF PTFA261702E PTFA261702E 170-watt l35 CAPacitor 1800 ldmos marking l33 BCP56 LM7805 RO4350 L42 marking transistor ATC Semiconductor Devices

    marking l33

    Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor
    Text: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features


    Original     		PDF PTFA261702E PTFA261702E 170-watt marking l33 transistor L44 L33 TRANSISTOR BCP56 LM7805 RO4350 L42 marking transistor

    speaker protection circuit diagram

    Abstract: BD5446EFV L43 3pin GRM188B11H471 GRM188B31A pwm 8pin C25D C50A C50B C53D
    Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.10075EBT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD


    Original     		PDF BD5446EFV 10075EBT14 BD5446EFV R1010A speaker protection circuit diagram L43 3pin GRM188B11H471 GRM188B31A pwm 8pin C25D C50A C50B C53D

    audio amplifier 2W IC 12PIN

    Abstract: Speaker 40W C25D C50A C50B BD5446EFV GRM188B11h c31c R50b sagami
    Text: High Performance Class-D Speaker / Headphone Amplifier Series 20W+20W Class-D Speaker Amplifier for Digital Input BD5446EFV No.10075EAT14 ●Overview BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power


    Original     		PDF BD5446EFV 10075EAT14 BD5446EFV R1010A audio amplifier 2W IC 12PIN Speaker 40W C25D C50A C50B GRM188B11h c31c R50b sagami

    L43 3pin

    Abstract: BD5446 C31B
    Text: BD5446EFV Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD


    Original     		PDF BD5446EFV 11075ECT14 BD5446EFV R1120A L43 3pin BD5446 C31B

    making L43

    Abstract: 3072 rohm
    Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD


    Original     		PDF BD5446EFV 11075ECT14 BD5446EFV R1120A making L43 3072 rohm

    R50B

    Abstract: No abstract text available
    Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD


    Original     		PDF BD5446EFV 11075ECT14 BD5446EFV R1120A R50B

    S T R 54041 EQUIVALENT

    Abstract: 33u 35v electrolytic capacitor
    Text: LM2596 Simple switcher Power Converter 150kHz 3A Step-Down Voltage Regulator GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with


    Original     		PDF LM2596 150kHz needed63-5L S T R 54041 EQUIVALENT 33u 35v electrolytic capacitor

    transistor a708

    Abstract: No abstract text available
    Text: Electronic Flow Meter FM1 Description Micro controller operated Flow Meter to monitor and display flow rates and temperature. Once correctly adjusted it can also be used for mass flow measurements. Factory pre-set for air and water. rail-mounted version 1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5446EFV No.11075ECT14 ●Description BD5446EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD


    Original     		PDF BD5446EFV 11075ECT14 BD5446EFV

    bm5446

    Abstract: No abstract text available
    Text: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input with Built-in DSP BM5446EFV No.10075EBT13 ●Description BM5446EFV is a Class D Speaker Amplifier with built-in DSP Digital Sound Processor designed for Flat-panel TVs in


    Original     		PDF BM5446EFV 10075EBT13 BM5446EFV R1010A bm5446

    BUK104-50L

    Abstract: BUK104-50S BUK104-50US
    Text: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving


    OCR Scan     		PDF 711002b D0b3fl43 BUK104-50L/S BUK104-50LP/SP pK104-50L/S Ips/lps25 BUK104-60L/S BUK104-50L BUK104-50S BUK104-50US

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    d 772 transistor

    Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain
    Text: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.


    OCR Scan     		PDF bbS3T31 2N3904 2N3906. 7Z749B8_ d 772 transistor 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain

    BD264A

    Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		PDF

    Y220b

    Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 BD264A NS9726 UD3008 2N3837 2N5417

    2SC736

    Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726

    Untitled

    Abstract: No abstract text available
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    028A5

    Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF

    80 amp 30v npn darlington

    Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 80 amp 30v npn darlington UD3008 transistor 2sc115 bd107a A515 B3570 B3571 BD106 HFE-10

    BD264

    Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF

    PNP transistor A705

    Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311