Untitled
Abstract: No abstract text available
Text: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. GPS2 click 2 1 3 4. Essential features 1. Introduction
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L30 dual diode
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet production data Features Diode 1 • Low forward voltage drop A1 Very small conduction losses K Diode 2 Negligible switching losses A2 Extremely fast switching Low thermal resistance K -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
L30 dual diode
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Untitled
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
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CM1230-02
Abstract: CM1230 CM1230-04 CM1230-08 L30 diode part marking CM1230-02cp CM1230-08CP
Text: PRELIMINARY CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with
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CM1230
CM1230
178mm
CM1230-04
CM1230-08
CM1230-02
CM1230-04
CM1230-08
L30 diode part marking
CM1230-02cp
CM1230-08CP
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CM1230-02
Abstract: CM1230-08CP CM1230-04 xtal 32.768 CM1230 CM1230-08 L30 diode part marking micro b usb
Text: CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with
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CM1230
CM1230
178mm
CM1230-04
CM1230-08
CM1230-02
CM1230-08CP
CM1230-04
xtal 32.768
CM1230-08
L30 diode part marking
micro b usb
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Untitled
Abstract: No abstract text available
Text: FERD60M45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB this device is intended to
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FERD60M45C
O-220AB
O-220AB
FERD60M45CT
DocID024892
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Untitled
Abstract: No abstract text available
Text: FERD60U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 Packaged in TO-220AB, this device is intended to be used in switch mode power supplies, or
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FERD60U45C
O-220AB,
O-220AB
FERD60U45CT
DocID024893
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Untitled
Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC12H065C
O-220AB
STPSC12H065CT
DocID024809
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Untitled
Abstract: No abstract text available
Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC8H065C
O-220AB
STPSC8H065CT
DocID024808
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L30 diode part marking
Abstract: l128dn l128dn transistor L128D
Text: STL128DN High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Large RBSOA ■ Integrated antiparallel collector-emitter diode
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STL128DN
O-220
L30 diode part marking
l128dn
l128dn transistor
L128D
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TR136D
Abstract: No abstract text available
Text: TR136D High voltage fast-switching NPN power transistor Preliminary Data Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode
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TR136D
O-220
TR136D
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Untitled
Abstract: No abstract text available
Text: TR236D High voltage fast-switching NPN power transistor Preliminary Data Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode
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TR236D
O-220
TR236D
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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Untitled
Abstract: No abstract text available
Text: FERD40U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB, and D2PAK, this device is intended to be used in switch mode power
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FERD40U45C
O-220AB,
FERD40U45CG
O-220AB
FERD40U45CT
DocID024891
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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11213
Abstract: STPS30120CT
Text: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high
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STPS30120C
O-220AB,
O-220AB
STPS30120CT
STPS30120CR
11213
STPS30120CT
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Untitled
Abstract: No abstract text available
Text: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high
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STPS30120C
STPS30120CR
O-220AB
STPS30120CT
O-220AB,
O-220AB
STPS30any
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STPS40120
Abstract: No abstract text available
Text: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high
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STPS40120C
O-220AB,
O-220AB
STPS40120CT
STPS40120CR
STPS40120CTN
STPS40120
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Untitled
Abstract: No abstract text available
Text: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency
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STPS40SM120C
O-220AB,
O-220AB
STPS40SM120CR
STPS40SM120CTN
O-220AB
STPS40SM120CT
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Untitled
Abstract: No abstract text available
Text: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency
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STPS40M120C
O-220AB,
O-220AB
STPS40M120CR
STPS40M120CTN
O-220AB
STPS40M120CT
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PS40M120CT
Abstract: STPS40M120CR
Text: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency
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STPS40M120C
O-220AB,
O-220AB
STPS40M120CR
STPS40M120CTN
STPS40M120CT
PS40M120CT
STPS40M120CR
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Untitled
Abstract: No abstract text available
Text: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high
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STPS40120C
O-220AB,
O-220AB
STPS40120CR
O-220AB
STPS40120CT
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PS40SM120CTN
Abstract: STPS40SM120CR
Text: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency
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STPS40SM120C
O-220AB,
O-220AB
STPS40SM120CR
STPS40SM120CTN
STPS40SM120CT
PS40SM120CTN
STPS40SM120CR
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Untitled
Abstract: No abstract text available
Text: STPS10H100C High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adapters and on-board DC/DC converters. A1 K A2 The product is packaged in TO-220AB,
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STPS10H100C
O-220AB,
O-220FPAB,
O-220AB
STPS10H100CT
STPS10H100CG-TR
O-220FPAB
STPS10H100CFP
DocID024444
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