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    L30 DIODE PART MARKING Search Results

    L30 DIODE PART MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    L30 DIODE PART MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. GPS2 click 2 1 3 4. Essential features 1. Introduction


    Original     		PDF

    L30 dual diode

    Abstract: No abstract text available
    Text: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj


    Original     		PDF STPS20200C O-220FPAB STPS20200CFP O-220AB STPS20200CT STPS20200CG-TR DocID024382 L30 dual diode

    Untitled

    Abstract: No abstract text available
    Text: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj


    Original     		PDF STPS20200C O-220FPAB STPS20200CFP O-220AB STPS20200CT STPS20200CG-TR DocID024382

    CM1230-02

    Abstract: CM1230 CM1230-04 CM1230-08 L30 diode part marking CM1230-02cp CM1230-08CP
    Text: PRELIMINARY CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with


    Original     		PDF CM1230 CM1230 178mm CM1230-04 CM1230-08 CM1230-02 CM1230-04 CM1230-08 L30 diode part marking CM1230-02cp CM1230-08CP

    CM1230-02

    Abstract: CM1230-08CP CM1230-04 xtal 32.768 CM1230 CM1230-08 L30 diode part marking micro b usb
    Text: CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with


    Original     		PDF CM1230 CM1230 178mm CM1230-04 CM1230-08 CM1230-02 CM1230-08CP CM1230-04 xtal 32.768 CM1230-08 L30 diode part marking micro b usb

    Untitled

    Abstract: No abstract text available
    Text: FERD60M45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB this device is intended to


    Original     		PDF FERD60M45C O-220AB O-220AB FERD60M45CT DocID024892

    Untitled

    Abstract: No abstract text available
    Text: FERD60U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 Packaged in TO-220AB, this device is intended to be used in switch mode power supplies, or


    Original     		PDF FERD60U45C O-220AB, O-220AB FERD60U45CT DocID024893

    Untitled

    Abstract: No abstract text available
    Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		PDF STPSC12H065C O-220AB STPSC12H065CT DocID024809

    Untitled

    Abstract: No abstract text available
    Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original     		PDF STPSC8H065C O-220AB STPSC8H065CT DocID024808

    L30 diode part marking

    Abstract: l128dn l128dn transistor L128D
    Text: STL128DN High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Large RBSOA ■ Integrated antiparallel collector-emitter diode


    Original     		PDF STL128DN O-220 L30 diode part marking l128dn l128dn transistor L128D

    TR136D

    Abstract: No abstract text available
    Text: TR136D High voltage fast-switching NPN power transistor Preliminary Data Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original     		PDF TR136D O-220 TR136D

    Untitled

    Abstract: No abstract text available
    Text: TR236D High voltage fast-switching NPN power transistor Preliminary Data Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original     		PDF TR236D O-220 TR236D

    Untitled

    Abstract: No abstract text available
    Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		PDF STPSC16H065C O-220AB STPSC16H065CT DocID024810

    Untitled

    Abstract: No abstract text available
    Text: FERD40U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB, and D2PAK, this device is intended to be used in switch mode power


    Original     		PDF FERD40U45C O-220AB, FERD40U45CG O-220AB FERD40U45CT DocID024891

    Untitled

    Abstract: No abstract text available
    Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


    Original     		PDF STPSC16H065C O-220AB STPSC16H065CT DocID024810

    11213

    Abstract: STPS30120CT
    Text: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high


    Original     		PDF STPS30120C O-220AB, O-220AB STPS30120CT STPS30120CR 11213 STPS30120CT

    Untitled

    Abstract: No abstract text available
    Text: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high


    Original     		PDF STPS30120C STPS30120CR O-220AB STPS30120CT O-220AB, O-220AB STPS30any

    STPS40120

    Abstract: No abstract text available
    Text: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high


    Original     		PDF STPS40120C O-220AB, O-220AB STPS40120CT STPS40120CR STPS40120CTN STPS40120

    Untitled

    Abstract: No abstract text available
    Text: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


    Original     		PDF STPS40SM120C O-220AB, O-220AB STPS40SM120CR STPS40SM120CTN O-220AB STPS40SM120CT

    Untitled

    Abstract: No abstract text available
    Text: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


    Original     		PDF STPS40M120C O-220AB, O-220AB STPS40M120CR STPS40M120CTN O-220AB STPS40M120CT

    PS40M120CT

    Abstract: STPS40M120CR
    Text: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


    Original     		PDF STPS40M120C O-220AB, O-220AB STPS40M120CR STPS40M120CTN STPS40M120CT PS40M120CT STPS40M120CR

    Untitled

    Abstract: No abstract text available
    Text: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high


    Original     		PDF STPS40120C O-220AB, O-220AB STPS40120CR O-220AB STPS40120CT

    PS40SM120CTN

    Abstract: STPS40SM120CR
    Text: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


    Original     		PDF STPS40SM120C O-220AB, O-220AB STPS40SM120CR STPS40SM120CTN STPS40SM120CT PS40SM120CTN STPS40SM120CR

    Untitled

    Abstract: No abstract text available
    Text: STPS10H100C High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adapters and on-board DC/DC converters. A1 K A2 The product is packaged in TO-220AB,


    Original     		PDF STPS10H100C O-220AB, O-220FPAB, O-220AB STPS10H100CT STPS10H100CG-TR O-220FPAB STPS10H100CFP DocID024444