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    L2711 Search Results

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    U95L271100A Amphenol Communications Solutions ULTRAPORT QSFP CAGE ASSY Visit Amphenol Communications Solutions
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    L2711 Price and Stock

    Carling Technologies L2711S001-AZZ00-000

    SWITCH ROCKER DPDT 0.4VA 28V
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    DigiKey L2711S001-AZZ00-000 Bulk 10
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    Amphenol Corporation U773GE162L2711A

    U773GE162L2711A - Trays (Alt: U773GE162L2711A)
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    OTTO Engineering Inc HTL2-711111CC32

    Joysticks Hall Effect Finger Joystick Switch
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    OTTO Engineering Inc HTL2-711111AA12

    Joysticks Long Concave Bttn 0.970in SQ. Black
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    OTTO Engineering Inc HTL2-711111GG12

    Joysticks Long Concave Bttn 0.970in SQ. Black
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    Mouser Electronics HTL2-711111GG12
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    L2711 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    L2711 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF

    L2711 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF L2711

    L271

    Abstract: L2711
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2711 L271 L2711

    L2711

    Abstract: No abstract text available
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF L2711 L2711

    BS6500

    Abstract: L2711 UL62
    Text: LAST UPDATED: March 12, 2001 L2703B CORDSET - 13A PLUG WITH CEE 22 RIGHT ANGLE CONNECTOR This unit has the same format as L2711 but incorporates a shielded screened mains cord which will reject radiated interference. Typical users are on computer terminals or other


    Original     		PDF L2703B L2711 250Va BS6500) L2703B BS6500 UL62

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2711

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2711

    L271

    Abstract: 01UF 100OHM 180PF 33PF L2711 LP721
    Text: LP721 7.5V Chart 1 L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V 13 8 7 12 POUT IN WATTS 6 5 Gain 11 4 3 Efficiency = 55% 10 2 1 9 0.1 0.2 0.3 0.4 0.5 PIN IN WATTS Page 1 0.6 0.7 0.8 0.9 GAIN IN DB Pout Vgs 7.5Vdc 8 7 R1 8.2KOHM C1 33PF RFin 1 2 .8-18pf L1 4.7NH


    Original     		PDF LP721 L2711 8-18pf 100OHM 22awg L2711 180PF L271 01UF 100OHM 180PF 33PF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF L2711

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF L2711

    L271

    Abstract: L2711 3393
    Text: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF L2711 L271 L2711 3393

    IT8511TE

    Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
    Text: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)


    Original     		PDF M7X/66-M GEN-ICS9LPR363AGLF-T C7310 C7320, C7321. Q4401 IT8511TE asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448

    realtek alc660

    Abstract: ALC660 F3J INVERTER CABLE asus RM04F M64-M ATI M64-M pt5737 QG82945PM MAC522
    Text: 5 A * 02 System Setting 62 USB CONN 03 * 63 * 04 CPU-YONAH HOST 64 ISA ROM 05 CPU-YONAH(PWR) 65 * 06 * 66 LED 07 NB-945PM(HOST) 67 * 08 NB-945PM(DMI & CFG) 68 DC & BAT IN 09 NB-945PM(GRAPHIC) 69 * 10 NB-945PM(DDR2) 70 Debug CONN. 11 NB-945PM(PWR) 71 * 12


    Original     		PDF NB-945PM M7X/64-M realtek alc660 ALC660 F3J INVERTER CABLE asus RM04F M64-M ATI M64-M pt5737 QG82945PM MAC522

    TB218

    Abstract: No abstract text available
    Text: TB218 Freq:30-162Mhz, Vds=7.2Vdc, Idq=800mA TB218 Gain/Efficiency vs Frequency: Vds=7.2Vdc, Idq=800mA 50 50 45 45 40 40 35 35 Efficiency 30 Pout fixed at 3W Gain 25 25 20 20 15 15 10 10 5 5 20 30 40 50 60 70 80 90 100 110 Frequency MHz 120 130 140 150 160


    Original     		PDF TB218 30-162Mhz, 800mA 190mil, 100nF

    l289

    Abstract: H-3117-0XX H-1132 h13100 L1247 151480 h15016 L1148 BTA 06 600 application note H1-507
    Text: Ledex Rotary Solenoids • The most extensive rotary solenoid line in the industry ■ Stock models available through distribution for next day shipment across North America Extensive capabilities for modified, custom fabricated solenoids and solenoidoperated mechanisms


    Original     		PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    L-15206-0XX

    Abstract: h3278 L1135 L-2634-0XX L2268 L22680 Burgess saia H-2550-0XX H-2128-0XX
    Text: Ledex Rotary Solenoids Modifications and Custom Capabilities Modifications and Customized Units saia-burgess Solenoids F Attachment screws used should not extend below the bottom surface of the armature plate or they may interfere with the rotary stroke.


    Original     		PDF

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original     		PDF 200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941