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    Advanced Energy Industries Inc SIL15C-12SADJ-V

    DC DC CONVERTER 0.9-5V 75W
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    Advanced Energy Industries Inc SIL15C-12SADJ-VJ

    DC DC CONVERTER 0.9-5V 75W
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    DigiKey SIL15C-12SADJ-VJ Tray
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    Avnet Abacus SIL15C-12SADJ-VJ 210
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    NXP Semiconductors TDA9981BHL-15-C1:5

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    NXP Semiconductors TDA9981AHL-15-C181

    IC HDMI TX 150MHZ SGL OUT 80LQFP
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    DigiKey TDA9981AHL-15-C181 Reel 1,000
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    NXP Semiconductors TDA9981BHL-15-C1,5

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    L15C1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L15C1 General Electric Semiconductor Data Book 1971 Scan PDF
    L15C1 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    L15C1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    L-05C10N

    Abstract: No abstract text available
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin


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    0201age L-05C10N PDF

    L-14C6N8

    Abstract: No abstract text available
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin


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    10lectrodes PDF

    L-14C6N8

    Abstract: L-07C4N7 L-07C3N3 L-14C8N2 L-07C8N2 14C15 L-07C6N8
    Text: www.johanson-caps.com High Frequency Ceramic Chip Inductors KEY ADVANTAGES APPLICATIONS • High-Q • Self Resonant Frequencies as high as 4.0 GHz • New ultra-minature size 0402 • Standard SMD chip sizes • Low Cost • Cellular Products • Wireless LAN


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    L-07C1N5S-_ L-07C1N8S-_ L-07C2N2S-_ L-07C2N7S-_ L-07C3N3 L-07C3N9 L-07C4N7 L-07C5N6 L-07C6N8 L-07C8N2 L-14C6N8 L-14C8N2 14C15 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature tin plated


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    PDF

    HC11A8

    Abstract: 68hC L14C2 l22c M2B4 lcr8 en18 R71B7 hc11e9 L14C3
    Text: MC68HC68VBI General Release Specification M68HC05 Microcontrollers HC68VBIGRS/D Rev. 3.1 08/2005 freescale.com List of Sections Section 1. General Description . . . . . . . . . . . . . . . . . . . 15 R E Q U I R E D General Release Specification — MC68HC68VBI


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    MC68HC68VBI M68HC05 HC68VBIGRS/D MC68HC68VBI HC11A8 68hC L14C2 l22c M2B4 lcr8 en18 R71B7 hc11e9 L14C3 PDF

    L-05C10N

    Abstract: L15C1 05C15 L-07C2N2ST L-05C3N3
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature tin plated


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    PDF

    L-05C1N0SV6T

    Abstract: HK0603 HK100547N tdk 0201 CL160808 LQG18HN MLK1005S2N2ST L-07C2N7SV6T L-05C8N2 LLV0603-F1N2S
    Text: High Frequency Monolithic Inductor Part Number Cross Reference This guide provides the necessary information to derive an equivalent Johanson Technology part number from another vendor’s part number. Johanson Technology Inc. supplies the information contained herein based on the vendor data available


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    Cl201210-1N5D

    Abstract: L-07C27N L-14C68N L-07CR10 L-07C4N7 CL1005 L-07C68N cl100505 L-14CR12 cl2012
    Text: High Frequency Ceramic Chip Inductors High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size 0201 - 0805 and


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    MLI01 Cl201210-1N5D L-07C27N L-14C68N L-07CR10 L-07C4N7 CL1005 L-07C68N cl100505 L-14CR12 cl2012 PDF

    L-14C33N

    Abstract: No abstract text available
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin


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    PDF

    0900BL18B200

    Abstract: S805D 500L41L120XG4 smd V05 2450BL15B200 substitution 0900BL18B100 SMD transistor package code V12 SMD package code V12 Johanson Dielectrics marking code v4t
    Text: C e HlSianc Roomp High Frequency Ceramic Solutions Antennas Baluns Capacitors - Low Loss Couplers Combiners Diplexers Filters - Notch, BP, LP Inductors IPC’s Integrated Passive Components Modules 90 Hybrids Substrates 931 VIA ALONDRA, CAMARILLO, CALIFORNIA 93012 • TEL (805) 389-1166 • FAX (805) 389-1821


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    TCAT-1103 0900BL18B200 S805D 500L41L120XG4 smd V05 2450BL15B200 substitution 0900BL18B100 SMD transistor package code V12 SMD package code V12 Johanson Dielectrics marking code v4t PDF

    07C12

    Abstract: CL1005 CL100505 L-14CR10 L-07C3N9 L-07C4N7 L-15C33N L-14CR22 SRF10-10
    Text: High Frequency Ceramic Chip Inductors High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size 0402 - 0805 and


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    TEMP00 MLI00-revB. 07C12 CL1005 CL100505 L-14CR10 L-07C3N9 L-07C4N7 L-15C33N L-14CR22 SRF10-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature tin plated


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH FREQUENCY CHIP INDUCTORS New miniature 0603 and 0805 size inductor chips feature monolithic ceramic construction allowing low cost manufacturing methods. The high-Q ceramic material exhibits self resonant frequencies up to 17 GHz. APPLICATIONS • CELL/PCS RF Modules


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    L-07C68N

    Abstract: LQG10A1N2S00
    Text: High Frequency Ceramic Chip Inductors High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size 0402 - 0805 and


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    MLI00-revB. L-07C68N LQG10A1N2S00 PDF

    photo transistor L14F

    Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
    Text: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline


    OCR Scan
    L14B1 L14B2 L14B3 L14B4 L14D1 2N5777 L14D2 2N5778 L14D3 2N5779 photo transistor L14F photo transistor 2n5777 L1402 L14F 2N5780 L14A502 L14f photo transistor photo transistor L14e2 PDF

    HC11A8

    Abstract: No abstract text available
    Text: General Release Specification — MC68HC68VBI List of Sections Section 1. General Section 2. M e m o ry .33 Section 3. Phase-Locked Loop PLL . 45


    OCR Scan
    MC68HC68VBI MC68HC68VBI. 28-Pin MC68HC68VBIFB b3b724B HC11A8 PDF

    SI345P

    Abstract: D28C3 250u5 D16P2 transistor 75U5 0 a darlington pair photo transistor L14B3 BDX66L D12X012 D28C8
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


    OCR Scan
    L15D2 MCH2005F SI345P 250mA 300mW 100nA 500mW 350ns 600mW SI346P D28C3 250u5 D16P2 transistor 75U5 0 a darlington pair photo transistor L14B3 BDX66L D12X012 D28C8 PDF