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Text: L120NH02V N-CHANNEL 20V - 0.0025Ω - 120A PowerFLAT 6X5 STripFET™ III MOSFET TARGET SPECIFICATION Table 1: General Features TYPE L120NH02V • ■ ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 20 V < 0.003 Ω 28 A (2) TYPICAL RDS(on) = 0.0025 Ω @ 4.5V
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STL120NH02V
STL120NH02V
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JESD97
Abstract: L120NH02V STL120NH02V
Text: L120NH02V N-channel 20V - 0.0025Ω - 120A - PowerFLAT 6x5 STripFET™ III Power MOSFET Target Specification General features Type VDSS RDS(on) ID L120NH02V 20V <0.003Ω 28A(1) 1. Value limited by wire bonding • Improved die-to-footprint ratio
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Original
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STL120NH02V
STL120NH02V
JESD97
L120NH02V
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PDF
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JESD97
Abstract: L120NH02V STL120NH02V
Text: L120NH02V N-channel 20 V - 0.0025 Ω - 120 A - PowerFLAT 6x5 STripFET™ III Power MOSFET Preliminary Data Features Type VDSS RDS(on) ID L120NH02V 20 V < 0.003 Ω 28 A(1) 1. Value limited by wire bonding • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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Original
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STL120NH02V
STL120NH02V
JESD97
L120NH02V
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PDF
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JESD97
Abstract: L120NH02V STL120NH02V
Text: L120NH02V N-channel 20 V - 0.0025 Ω - 120 A - PowerFLAT 6x5 STripFET™ III Power MOSFET Preliminary Data Features Type VDSS RDS(on) ID L120NH02V 20 V < 0.003 Ω 28 A(1) 1. Value limited by wire bonding • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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Original
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STL120NH02V
STL120NH02V
JESD97
L120NH02V
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PDF
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