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    L-BAND 60 WATT TRANSISTOR Search Results

    L-BAND 60 WATT TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    L-BAND 60 WATT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FERRITE TOROID

    Abstract: F624-19 100MIL ferrite L8 FERRITE TOROID Indiana General F684-1 Johanson Dielectrics UDR-450 C144* transistor Johanson Piston Trimmer c16pc
    Text: UDR-450 450 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-450 is an internally matched, COMMON EMITTER transistor capable of providing 450 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450


    Original     		PDF UDR-450 UDR-450 100MIL) FG27-8 180pf, 470pf, FERRITE TOROID F624-19 100MIL ferrite L8 FERRITE TOROID Indiana General F684-1 Johanson Dielectrics C144* transistor Johanson Piston Trimmer c16pc

    100MIL

    Abstract: FERRITE TOROID Johanson Piston Trimmer indiana general UDR-500 udr 70 F624-19 l44 transistor
    Text: UDR-500 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The UDR-500 is an internally matched, COMMON EMITTER transistor capable of providing 500 Watts of pulsed RF output power at sixty microseconds pulse width, two percent duty factor across the band 400-450


    Original     		PDF UDR-500 UDR-500 100MIL) 180pf, 470pf, 100MIL FERRITE TOROID Johanson Piston Trimmer indiana general udr 70 F624-19 l44 transistor

    MRF327

    Abstract: 80WF
    Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base


    Original     		PDF MRF327 AR120NA MRF327 80WF

    MRF327

    Abstract: No abstract text available
    Text: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the


    Original     		PDF MRF327 VK200-19/4B 10i22 80-mil-Thick MRF327

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization


    Original     		PDF PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF

    2SC2131

    Abstract: No abstract text available
    Text: ^s.mi-Conau.cto'L ^Pioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OUTLINE DRAWING Dimensions ,n mm «!9-39 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2131 is a silicon NPN epitaxial planar type transistor designed


    Original     		PDF 2SC2131 500MHz 15CVs

    Untitled

    Abstract: No abstract text available
    Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 1522-PTF

    UTV020

    Abstract: No abstract text available
    Text: Products., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UTV020 2 Watts, 25 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55FT, STYLE 2 The UTV 020 is a COMMON EMITTER transistor capable of providing 2


    Original     		PDF UTV020 UTV020

    Johanson Piston Trimmer

    Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
    Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc


    Original     		PDF MRF327/D MRF327 Johanson Piston Trimmer J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier

    BFY81

    Abstract: No abstract text available
    Text: 3s BFY81 DUAL, HIGH-GAIN, LOW-NOISE, LOW-CURRENT TYPE NPN DIFFUSED SILICON PLANAR TRANSISTORS PHYSKAl MUCNSKWS G E N ER A L D ESCRIPTIO N - The B F Y 8 1 i s a six terminal device containing two iso la ted high gain NPN double d iffu sed silic o n PLA N A R tran sistors.


    OCR Scan     		PDF BFY81 BFY81

    bfy81

    Abstract: No abstract text available
    Text: 3iT i^r?sr BF Y 81 DUAL, HIGH-GAIN, LOW-NOISE, LOW-CURRENT TYPE NPN DIFFUSED SILICON PLANAR TRANSISTORS phtocu huenskws G E N ER A L D E S C R IP T IO N -T h e B F Y 8 1 i s a six terminal d ev ice co n tain in g two iso la te d high gain NPN double d iffu sed silico n P LA N A R tran sisto rs.


    OCR Scan     		PDF

    2N410

    Abstract: 2N487 2n404 2N4880
    Text: I» D DUAL MONOLITHIC MATCHED NPN SILICON PLANAR TRANSISTORS O 65 RUSHMORE STREET, WESTBURX NEW YORK 11590 516 997-7474 TWX 510*222*0974 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 G E N E R A L D E S C R IP T IO N D IELEC T R IC A LLY Package Options ISOLATED


    OCR Scan     		PDF 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 2N410 2N487 2n404 2N4880

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF MRF327 MRF327 Li3b7555

    MRF327

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF 80-mil-Thick MRF327

    TCF10B

    Abstract: pilot relay TC-10B master trip relay power line carrier communication abb TC-10
    Text: T y p e s 1 AStA BROWN BOVfcft! T C - 1 0 B a n c l T C F - T 0 B " Frequency programmable power line carrier 1MDB11007-EN Page 1 March 1992 Changed since August 1990 Data subject to change without notice ABB Network Control & Protection SE 90629 Features


    OCR Scan     		PDF 1MDB11007-EN TC-10B TCF-10B TAMP-100 TCF10B pilot relay master trip relay power line carrier communication abb TC-10

    ACRIAN

    Abstract: acrian inc
    Text: 0182998 ACRIAN INC T7 ACRIAN INC rJm UStk Krai JS l M l ¡2 S I H m P ! S r . n i L h Wj¡¡¡ h >« Ü m&Z I 12 WATT - 28 VOLT 100-500 MHz The 0105-12 is a 12 watt balanced transistor designed for broadband use in the 100-500 M Hz frequency band. It may be operated in Class A, AB or C. Gold


    OCR Scan     		PDF 33-OJ GDG1E17 ACRIAN acrian inc

    transistor B 764

    Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
    Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838

    TRANSISTOR BC 545

    Abstract: NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643
    Text: MM m tm F?F- Products m M ic m s e m i 140 Commerce Drive Montgomery ville, PÂ 18936' Tel: ,215 631-9840 2N5641 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS 175MHz • FREQUENCY ■ VOLTAGE 28V TO 40 W • HIGH POWER OUT . HIGH POWER GA!N


    OCR Scan     		PDF 2N5641 2N5642/2N5643 230MHz 175MHz SD120O SDT224 2NS641 SD1222-10 2N5642 2N564 TRANSISTOR BC 545 NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    2SC730

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC730 2SC730 150MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC2056 2SC2056 175MHz

    2SC1947 equivalent

    Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor

    2SC730

    Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.


    OCR Scan     		PDF 2SC730 2SC730 150MHz TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC2131 500MHz 150MHz 150MHz 450MHz) 100pF, 01/iF, 200/iF 01/iF