1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor
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HVV1214-075
HVV1214-075MHz,
HVV1214-075
429-HVVi
EG-01-PO08X4
L-Band 1200-1400 MHz
diode gp 429
Radar
x band radar
HV400
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Radar
Abstract: diode gp 429 HV400 hvvi transistor 1150
Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,
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HVV1012-050
HVV1012-050
HVV1012-050MHz,
Pulsed10
HVV1012-060
1025-1150MHz,
10sPACKAGE
Radar
diode gp 429
HV400
hvvi
transistor 1150
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NI-400
Abstract: diode gp 429 HV400
Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,
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HVV1012-050
HVV1012-050
HVV1012-050MHz,
Pulsed10
HVV1012-060
1025-1150MHz,
10sPACKAGE
NI-400
diode gp 429
HV400
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HVV1214-250L
Abstract: hvvi
Text: HVV1214-250L Product Overview L-Band High Power Pulsed Transistor 2000µs Pulse Width, 10% Duty Cycle For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1214-250L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1214-250L
HVV1214-250L
1200MHz
1400Mhz
EG-01-PO16X1
hvvi
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500W TRANSISTOR
Abstract: hvvi
Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-500L
on/18us
HVV1011-500L
EG-01-PO17X1
500W TRANSISTOR
hvvi
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1214EL40 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon LDMOS FET High Power Gain Excellent thermal stability Gold Metal Part number ILD1214EL40 is designed for L-Band radar applications operating over the 1.215-1.400 GHz instantaneous frequency band.
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ILD1214EL40
ILD1214EL40
16ms/50%
ILD1214EL40-REV-NC-DS-REV-D
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bd 36 930
Abstract: No abstract text available
Text: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a
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IB0810M210
IB0810M210
IB0810M210-REV-NC-DS-REV-B
bd 36 930
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diode gp 429
Abstract: HV400
Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty
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HVV1012-100
HVV1012-100
1025-1150Avionics
1025-1150MHz,
429-HVVi
diode gp 429
HV400
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transistor s 1014
Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor
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HVV1214-025
HVV1214-075
HVV1214-025
EG-01-PO05X5
429-HVVi
EG-01-PO05X1
transistor s 1014
L-Band 1200-1400 MHz
Radar
radar circuit component
x band radar
HV400
SM200
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Radar
Abstract: diode gp 429 HV400
Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty
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HVV1012-100
HVV1012-100
1025-1150Avionics
1025-1150MHz,
429-HVVi
Radar
diode gp 429
HV400
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ATC100A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 PINNING - SOT467C FEATURES • High power gain
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M3D381
BLL1214-35
OT467C
SCA74
613524/01/pp8
ATC100A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A
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M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
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ATC200B
Abstract: BLL1214-250 MLD861
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES
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M3D379
BLL1214-250
OT502A
SCA75
613524/03/pp10
ATC200B
BLL1214-250
MLD861
|
|
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BLL1214-250
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Preliminary specification 2002 Jan 10 Philips Semiconductors Preliminary specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLL1214-250
OT502A
SCA73
BLL1214-250
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475 50K
Abstract: 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor FEATURES BLL1214-35 PINNING - SOT467C • High power gain
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M3D381
BLL1214-35
OT467C
OT467C)
SCA74
613524/01/pp8
475 50K
475 50K 608
"475 50K"
ATC100A
BLL1214-35
ATC100B
radar circuit component
1200 - 1400 MHz L-Band Applications
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of
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IB1214M375
IB1214M375
IB1214M375-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011S350 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating
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IB1011S350
IB1011S350
1090MHz.
D1977-2
IB1011S350-REV-NC-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high fT L-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over
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IB1214M55
IB1214M55
IB1214M55-REV-NC-DS-REV-C
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating
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IB0810M50
IB0810M50
IB0810M50-REV-NC-DS-REV-A
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D1790
Abstract: No abstract text available
Text: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating
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IB1011S70
IB1011S70
1090MHz.
IB1011S70-
D1790
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D1788
Abstract: No abstract text available
Text: Part Number: Integra IB1011S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating
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IB1011S250
IB1011S250
1090MHz.
IB1011S250-REV-NC-DS-REV-A
D1788
|
Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over
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IB1214M32
IB1214M32
IB1214M32-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating
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IB1214M150
IB1214M150
IB1214M150-REV-NC-DS-REV-A
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