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    L 3005 TRANSISTOR Search Results

    L 3005 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L 3005 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PS2501 optocoupler

    Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
    Text: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar


    Original     		PDF

    MP1470

    Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
    Text: MICRONAS INTERMETALL CCZ 3005 H Central Control Unit MICRONAS Edition March 13, 1996 6251-412-2DS CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34


    Original     		PDF 6251-412-2DS MP1470 transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482

    Untitled

    Abstract: No abstract text available
    Text: MC100EP14 3.3V / 5V 1:5 Differential ECL/PECL/HSTL Clock Driver Description The MC100EP14 is a low skew 1−to−5 differential driver, designed with clock distribution in mind, accepting two clock sources into an input multiplexer. The ECL/PECL input signals can be either differential or


    Original     		PDF MC100EP14 MC100EP14 LVEP14 MC10EP56/D

    Untitled

    Abstract: No abstract text available
    Text: MC100EP40 3.3V / 5V ECL Differential Phase-Frequency Detector Description The MC100EP40 is a three−state phase−frequency detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. Advanced design


    Original     		PDF MC100EP40 MC100EP40 MC100EP40/D

    Untitled

    Abstract: No abstract text available
    Text: MC10EP57, MC100EP57 3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer


    Original     		PDF MC10EP57, MC100EP57 MC10/100EP57 MC10EP57/D

    current to voltage converter using 741

    Abstract: ZN425 ZN424 ZN425E8 ZN424P ZN425E-8 ramp generator 555 ZN425E 6 bit r2r ladder 741 as buffer amplifier
    Text: i E C S E M I p l e s s e m - W - y C~~Ò N D U C T O R~~S~| 3005-1.0 ZN425E8 8-BIT D-A/A-D CONVERTER The ZN425 is a monolithic 8-bit D-A converter containing n R-2R ladder network of diffused resistors with precision ipolar switches, and in addition a counter and a 2.5V


    OCR Scan     		PDF ZN425E8 ZN425 10kohms ZN425 ZLD741 current to voltage converter using 741 ZN424 ZN425E8 ZN424P ZN425E-8 ramp generator 555 ZN425E 6 bit r2r ladder 741 as buffer amplifier

    ax 3003

    Abstract: ax 3005 3003
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRW3001 MRW3003 MRW3005 M icrowave Power Transistors . . designed prim arily for large-signal output and driver am plifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers


    OCR Scan     		PDF MRW3001 MRW3003 MRW3005 MRW300 JIRW300 MRW3005 ax 3003 ax 3005 3003

    ax 3003

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3001 MRW3003 MRW3005 The RF Line M icrowave Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers


    OCR Scan     		PDF MRW3001 MRW3003 MRW3005 MRW3001 MRW30Q5 ax 3003

    MOTOROLA 13003

    Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER


    OCR Scan     		PDF MRW3000 TRW3000 MOTOROLA 13003 F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL

    MM3007

    Abstract: MM3005 MM3006 MM5007 MM5005 MM5006
    Text: MM3005 silicon MM3006 MM3007 MPN S ILICOÍM A N N U LA R NPN SILICON A U D IO TRANSISTORS TRANSISTORS . . . designed fo r high-voltage audio driver am plifiers and generalpurpose switching and oscillator applications. High C ollector-E m itter Breakdown Voltage —


    OCR Scan     		PDF MM3005 MM3006 MM3007 MM3007) MM5005, MM5006, MM5007 MM3005 MM3007 D3006 MM5007 MM5005 MM5006

    transistor 30054

    Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
    Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications


    OCR Scan     		PDF

    2n3411

    Abstract: 2N3419 2N3418
    Text: n iC R O SEH I CORP/ üiatertow n SDE D 'OMTIba POWER TRANSISTORS DG1SM77 HÜS IUNIT JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEA TU RES • Meets MIL-S-19500/393


    OCR Scan     		PDF DG1SM77 2N3418 2N3419 2N3420 2N3421 MIL-S-19500/393 1003C T347Tb3 2N3418-2N3421 2n3411 2N3419 2N3418

    2N3419

    Abstract: 2n341 2N3420 2N3421
    Text: POWER TRANSISTORS JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEATURES • M eets MIL-S-19500/393 • C ollector-Base Voltage: up to 125V • Peak Collector Current: 5A


    OCR Scan     		PDF 2N3418 2N3419 2N3420 2N3421 MIL-S-19500/393 2N3418-2N3421 2n341 2N3421

    2N3419

    Abstract: 2N3420 2N3421 2N3418 Unitrode transistors data To5 2N3416 JANTXV2N3418 JANTXV2N3419 2n3418-2n3421 N3421
    Text: POWER TRANSISTORS JAN, JANTX, JAN, JANTX, JAN, JANTX, JAN, JANTX, 3 Amp, 80V, Planar NPN & JANTXV 2N3418 & JANTXV 2N3419 & JANTXV 2N3420 & JANTXV 2N3421 FEATURES DESCRIPTION • M e e t s M IL -S -1 9 5 0 0 / 3 9 3 U n it r o d e p o w e r t r a n s is t o r s p r o v id e a u n iq u e


    OCR Scan     		PDF JANTXV2N3418 JANTXV2N3419 2N3420 2N3421 MIL-S-19500/393 861-654D 2N3419 2N3421 2N3418 Unitrode transistors data To5 2N3416 2n3418-2n3421 N3421

    40 pins ic used in color television with ir captu

    Abstract: semiconductors cross index itt capacitors itt capacitor semiconductors cross reference ITT Intermetall 200H 65C02 K6S6 413027
    Text: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.


    OCR Scan     		PDF 4bfl2711 Palet35 Q00bG4G 40 pins ic used in color television with ir captu semiconductors cross index itt capacitors itt capacitor semiconductors cross reference ITT Intermetall 200H 65C02 K6S6 413027

    A23041

    Abstract: 2N4150 Unitrode transistors data To5
    Text: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode power transistors provide a unique com bination o f low saturation voltage, high gain and fast switching. They are ideally suited fo r power supply pulse


    OCR Scan     		PDF 2N4150 MIL-S-19500/394 A23041 2N4150 Unitrode transistors data To5

    transistor ESM 3004

    Abstract: ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a
    Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide


    OCR Scan     		PDF O-220 00V-600V 1000T 2060T CB-70 transistor ESM 3004 ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ UATERTOUN SDE 13471b3 GG124ÔS Sfil M U N I T POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN F EA T U RES • M eets MIL-S-19500/394 • Collector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fast S w itch in g


    OCR Scan     		PDF 13471b3 GG124Ã 2N4150 MIL-S-19500/394

    motorola 2961

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRW3001 MRW 3003 MRW 3005 M icrow ave Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.5 to 3 .0 G H z frequency range. • Designed for C lass B or C, C om m on B ase Linear Pow er Amplifiers


    OCR Scan     		PDF MRW3001 MRW3003 MRW3005 motorola 2961

    M3002M

    Abstract: M3006M transistor 3005 2 L 3005 TRANSISTOR transistor 3005 transistor 3006 3003 BR TRANSISTOR transistor m 3003 g 3006M in 3003 TRANSISTOR
    Text: MOTOROLA SC Í X S T R S / R 6367254 FJ "Tb MOTOROLA SC j>F|t,3L,7ES4 00üE35ti S 96D CXSTRS/R F 82356 _ 7" - ¿ - D 33 MM3001 thru MM3003 CASE 79-02, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Sym bol R a tin g C o lle c to r-E m itte r V o lta g e


    OCR Scan     		PDF E35ti MM3001 MM3003 O-205AD) M3002M M3006M transistor 3005 2 L 3005 TRANSISTOR transistor 3005 transistor 3006 3003 BR TRANSISTOR transistor m 3003 g 3006M in 3003 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES • M e ets MIL-S-19500/394 • C ollector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fa st Sw itch in g • Low Saturation Voltage D E S C R IP T IO N U nitrode power tra n sistors provide a


    OCR Scan     		PDF 2N4150 MIL-S-19500/394

    RS 3005 CL

    Abstract: No abstract text available
    Text: LPV521 LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier Texa s In s t r u m e n t s Literature Number: SNOSB14B t í a l LPV521 Semiconductor Nanopower, 1.8V, RRIO, CMOS Input, Operational Am plifier General Description Features The LPV521 is a single nanopower 552 nW am plifier de­


    OCR Scan     		PDF LPV521 LPV521 SNOSB14B RS 3005 CL

    C 547 B pin configuration

    Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
    Text: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max


    OCR Scan     		PDF CB-76 BC317P. C 547 B pin configuration transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B

    3ghz npn transistor 1w

    Abstract: rca 3001 transistor RCA3001 RCA3003 HF-46 XI 3003 RCA3005 telemetry 406 1651 ghz
    Text: File No. 6 5 7 . RF Power Tran sisto rs Solid State Division RCA3001 R C A3003 RCA3005 1-W, 2.5-W , and 4.5-W 3-GHz Emitter-Ballasted N-P-N Transistors Features: • 1-W output with 7-dB gain min. at 3 GHz (RCA3001) ■ 2.5-W output with 5-dB gain (min.) at 3 GHz (RCA3003)


    OCR Scan     		PDF RCA3001 RCA3003 RCA3005 HF-46 HF-46 H-1796 RCA3001) RCA3003) RCA3005) RCA3001, 3ghz npn transistor 1w rca 3001 transistor XI 3003 RCA3005 telemetry 406 1651 ghz