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    KY 2 TRANSISTOR Search Results

    KY 2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    KY 2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    potentiometer 470k

    Abstract: KY transistor vhb200w-q24-s24 VHB200W KY Series DC 5V to DC 100V CIRCUIT DIAGRAM KY 100v KY Series 100v vhb200w-q24-s15 KY Series 82uf 100v
    Text: rev. description features The VHB200W series of DC-DC converters are designed for high reliability applications, featuring over-temperature protection, and over-current protection. The wide 4:1 input range 10-36V or 18-75V is very useful to stabilize an input


    Original     		PDF VHB200W VHB200W 0-36V 8-75V) 32-200W 20MHz. 112th potentiometer 470k KY transistor vhb200w-q24-s24 KY Series DC 5V to DC 100V CIRCUIT DIAGRAM KY 100v KY Series 100v vhb200w-q24-s15 KY Series 82uf 100v

    AT892051

    Abstract: AT892051 coding DR1200-DK AT8920 Car remote keyless entry schematic diagram 1n4148ct AT89C2051 microcontroller 20 pin ic Motorolla transistor replacement book schematic diagram UPS DR1200
    Text: File: 400-1436.doc Rev: B, 1999.03.05 Virtual Wire  Development Kit Manual for DR1200-DK and DR1201DK Virtual Wire  Development Kit Hardware Warranty Special Notices 1 Virtual Wire  Development Kit Introduction 1.1 1.2 1.3 1.4 1.5 Purpose of the Virtual Wire Development Kit


    Original     		PDF DR1200-DK DR1201® JANTX1N4148 1N5819 T491B106K006AS T491A105K016AS 100uf 9723K22 H620-ND H560-ND AT892051 AT892051 coding AT8920 Car remote keyless entry schematic diagram 1n4148ct AT89C2051 microcontroller 20 pin ic Motorolla transistor replacement book schematic diagram UPS DR1200

    top 433.92 MHZ came tx

    Abstract: AT892051 AT892051 coding AT89C2051 ic ecn 1310 Motorolla Motorolla transistor replacement book schematic diagram UPS stepping motor coil construction DR1300-DK
    Text: File: 400-1455.doc Rev: B, 1999.05.12 Virtual Wire  Development Kit Manual for DR1300-DK Virtual Wire  Development Kit Hardware Warranty Special Notices 1 Virtual Wire  Development Kit Introduction 1.1 1.2 1.3 1.4 1.5 Purpose of the Virtual Wire Development Kit


    Original     		PDF DR1300-DK JANTX1N4148 1N5819 T491B106K006AS T491A105K016AS 100uf 9723K22 H620-ND H560-ND AT89C2051-24PC top 433.92 MHZ came tx AT892051 AT892051 coding AT89C2051 ic ecn 1310 Motorolla Motorolla transistor replacement book schematic diagram UPS stepping motor coil construction DR1300-DK

    91841A005

    Abstract: INTERFACING LED WITH AT89C2051 LM358 comparator circuit Microcontroller AT89C2051 virtual machine Microcontroller - AT89C2051 virtual machine Microcontroller - AT89C2051 pin diagram ZVN2106A MMIC MARKING P18 ATmel AT89C2051 RX2020
    Text: File: 400-1397.doc 400-1397-001, Rev: B Virtual Wire Development Kit Manual for DR1007-DK Virtual Wire Development Kit Hardware Warranty Special Notices 1 Virtual Wire Development Kit Introduction 1.1 1.2 1.3 1.4 1.5 Purpose of the Virtual Wire Development Kit


    Original     		PDF DR1007-DK H560-ND H620-ND 91771A107 91841A005 98449A005 9723K22 MAX218CPP-ND RS232 MAX218CPP 91841A005 INTERFACING LED WITH AT89C2051 LM358 comparator circuit Microcontroller AT89C2051 virtual machine Microcontroller - AT89C2051 virtual machine Microcontroller - AT89C2051 pin diagram ZVN2106A MMIC MARKING P18 ATmel AT89C2051 RX2020

    VHB100W-Q24-S24

    Abstract: VHB100W-Q48-S24 VHB100W VHB100W-Q24-S28 vhb100w-q48-s28 47uf/100v VHB100W-Q24-S12 VHB100W-Q24-S5 VHB100W-Q24-S48 DC-DC converter 9-36V input range 12v output
    Text: rev. description features The VHB100W series of DC-DC converters are designed for high reliability applications, featuring over-temperature protection, over-current protection. The wide 4:1 input range 9-36V or 18-75V is very useful to stabilize an input source


    Original     		PDF VHB100W VHB100W 8-75V) 6-100W 20MHz. 112th VHB100W-Q24-S24 VHB100W-Q48-S24 VHB100W-Q24-S28 vhb100w-q48-s28 47uf/100v VHB100W-Q24-S12 VHB100W-Q24-S5 VHB100W-Q24-S48 DC-DC converter 9-36V input range 12v output

    VHB50W-Q24-S48

    Abstract: VHB50W-Q48-S48 47uf/100v 50V 100uf rca 6086 VHB50W-Q24-S15 VHB50W-Q24-S12 VHB50W-Q48-S12 12V DC to 24V dC converter schematic diagram KY Series
    Text: rev. description features The VHB50W series of DC-DC converters are designed for high reliability applications, featuring over-temperature protection, over-current protection. The wide 4:1 input range 9-36V or 18-75V is very useful to stabilize an input source


    Original     		PDF VHB50W VHB50W 8-75V) 5-50W 20MHz. 112th VHB50W-Q24-S48 VHB50W-Q48-S48 47uf/100v 50V 100uf rca 6086 VHB50W-Q24-S15 VHB50W-Q24-S12 VHB50W-Q48-S12 12V DC to 24V dC converter schematic diagram KY Series

    marking 3a SOT89

    Abstract: No abstract text available
    Text: ྯ૵਌ Epitaxial Planar PNP Transistor Epitaxial Planar PNP Transistor ྯ૵਌ FHA1001 DESCRIPTION & FEATURES 概述及特點 Low Collector Saturation Voltage High Power Dissipation SOT-89 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號


    Original     		PDF FHA1001 OT-89 OT-89 FHA1001 FHA1001Y -35VIE -10mA -75mA marking 3a SOT89

    speaker 8 ohm

    Abstract: MSS0618
    Text: o • ■ -V Prelim inary M O SEL VITE LIC INC. February 1999 MSS0618 Transistor-less variable pitch 6" Voice ROM Features I Single pow er supply can operate at 2.4 V through 6.0 V. I B uilt-in o scillatin g R esisto r b on ding o ptio na lly. 4 frequencies are provided optionally chipw ise:5, 6, 7, 8


    OCR Scan     		PDF MSS0618 10000h) 9000hx speaker 8 ohm MSS0618

    EN2510A

    Abstract: EN2510
    Text: O r d e r in g n u r r b e r : E.N 2510 A 1 2SA1592/2SC4134 N0.251OA SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Applications . Power supplies, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes


    OCR Scan     		PDF 251OA 2SA1592/2SC4134 2SA1592/2SC4134-applied 2SA1592 SC4134 2SA1592/2SC4134 EN2510A EN2510

    sy 320 diode

    Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
    Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren


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    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan     		PDF 000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN 3582 _ 2SA1768/2SC4612 No.3582 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications A pplications . Color T V sound output, converter, inverter Features . Adoption of MBIT process . High breakdown voltage, large current capacity


    OCR Scan     		PDF 2SA1768/2SC4612 2SA1768 5110MO

    2SD1887

    Abstract: No abstract text available
    Text: Ordering num ber: EN 2434 2SD1887 No.2434 NPN Triple Diffused Planar Silicon Transistor SAiYO i Color TV Horizontal Deflection _Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output


    OCR Scan     		PDF 2SD1887 100ns 711707b 0DSD311 2SD1887

    AC Zero detector

    Abstract: No abstract text available
    Text: Principle of Operation SSR Switching Characteristics 1. SSR for AC Loads 1 Zero-crossing SSR The zero-crossing SSR uses a photo­ transistor or phototriac coupler to isolate the input from the output (see the circuit configuration on the previous page).


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    LA2500

    Abstract: Sanyo LA2500 JV3 diode class A power amp sanyo power amp
    Text: LA2500 No.1443A SANYO ✓ Monolithic Linear IC P seudo Cl a s s A B i a s Ci r c u i t for Power Amp Features . Incorporating the LA2500 in a pure complementary class B power amp permits this amp to be changed to a pseudo class A power amp easily. . The power transistors in the pseudo class A power amp are not cut off,


    OCR Scan     		PDF LA2500 LA2500 3017B-S9IC 4255MW Sanyo LA2500 JV3 diode class A power amp sanyo power amp

    AIL 4

    Abstract: 2SA1813
    Text: Ordering number: EN3972 No.3972 SAXYO i 2SA1813 PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer.


    OCR Scan     		PDF EN3972 2SA1813 2SAl813-applied AIL 4

    Untitled

    Abstract: No abstract text available
    Text: m M m b H F P ro d u c ts ic r o s e m m i 140 C o m m e rc e D rive Montgomeryvilie, PA 18936-1013 Tel: 215 631 -9840 5 D 1 O 5 0 RF & MICROWAVE TRANSISTORS CLASS A MICROWAVE 2.3GHz •2W K-iixUUi^OY HO'.VfcH OUT POVVfe« GAiN '/O L fA G L 11dB 1ftv 80mA


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    2SD1309

    Abstract: d1309 BO150
    Text: 2SD 1309 2SD1309 N P N + V h^ x ^ NPN Silicon Epitaxial Darlington Transistor Audio Frequency Amplifier and Low Speed Switching Industrial Use Xi f f l K M m / P ACKAGE DIMENSIONS # * / FEATURES > > O t e » 7 " ' V — o C - E Paliseli. II K / N - . y 'r — ^ X


    OCR Scan     		PDF 2SD1309 2SD1309 d1309 BO150

    2SC1627

    Abstract: 2sc1627 transistor
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2 S C 1 627 DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC1627) Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS . 5.1 MAX. • s Complementary to 2SA817 Driver Stage .Application of 20 to 2-5 "Wsitts Amplifiers.


    OCR Scan     		PDF 2SC1627 2SC1627) 2SA817 2SC1627-2* 2SC1627 2sc1627 transistor

    transistor kt 925

    Abstract: 2SC4365 2SC4072
    Text: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.


    OCR Scan     		PDF 250mm racteristics/Ta-25 MT930617TR transistor kt 925 2SC4365 2SC4072

    1944B

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r:EN 1944B SAHYOi Nol944B a _ 2SC3771 NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator, Mixer, HF Amp Applications Applications . UHF/VHF frequency converters, local oscillators, HF amplifiers Features . High power gain: PG=10dB typ f=0.9GHz .


    OCR Scan     		PDF 1944B Nol944B 2SC3771 2SC3771 200MHz 1944B

    603 transistor npn

    Abstract: BT 316 transistor
    Text: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —


    OCR Scan     		PDF DSDH33Ã Q00bS17 D40D11 THC40D11 D41D11 THC41D11 0S0433fl 05D433fl 603 transistor npn BT 316 transistor

    telefunken transistoren

    Abstract: service-mitteilungen halbleiter telefunken funkschau Radio Fernsehen Elektronik Servicemitteilungen telefunken dioden VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN stassfurt diode sy 526
    Text: SERVICE-MITTEILUNGEN V EB IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N AUSGABE: r a d i o -television 675 J ü N I S S IT Ï 1-6 Der "CHASAR - 401" wird aus der Sowjetunion importiert« Ss handelt sich bei diesem Gerät um einen Kofferempfänger der unteren Preisgruppe. Die tech­


    OCR Scan     		PDF 13t681· III/18/379 telefunken transistoren service-mitteilungen halbleiter telefunken funkschau Radio Fernsehen Elektronik Servicemitteilungen telefunken dioden VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN stassfurt diode sy 526