10003 NPN
Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-001
500mA,
10003 NPN
STD1664
STB1132
a2 sot-89
KST-8004-001
TRANSISTOR 10003
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STB1132
Abstract: STD1664
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-002
-500mA,
-50mA
-50mA,
30MHz
STB1132
STD1664
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8002 amplifier
Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766
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STB1188
STD1766
OT-89
KST-8002-001
-200mA
-500mA,
30MHz
8002 amplifier
KST-8002-001
TRANSISTOR 10003
STB1188
STD1766
kst80
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KST-8007-002
Abstract: MARKING CODE YA TRANSISTOR marking ya STD361
Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.
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STD361
A/150
OT-89
KST-8007-002
KST-8007-002
MARKING CODE YA TRANSISTOR
marking ya
STD361
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Untitled
Abstract: No abstract text available
Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766
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STB1188
STD1766
OT-89
KST-8002-002
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Untitled
Abstract: No abstract text available
Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KST-8006-002
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ZLDQ250A
Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513
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pinwei0225
ZLDQ250A
pwm INVERTER welder
ZQ25A
zldq150a
ZQ50A
st600c
ZQ35A
diode m3
3phase bridge diode mds 60
SKE200A
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STB1188
Abstract: STD1766
Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KST-8006-001
200mA
500mA
STB1188
STD1766
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Untitled
Abstract: No abstract text available
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-003
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STD1766
Abstract: Transistor B2 SOT-89 STB1188
Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KST-8006-002
STD1766
Transistor
B2 SOT-89
STB1188
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STB1132
Abstract: Transistor STD1664 a1 sot-89
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-003
STB1132
Transistor
STD1664
a1 sot-89
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-002
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-003
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TRANSISTOR 10003
Abstract: STA346 marking d2
Text: STA346 Semiconductor PNP Silicon Transistor Features • Low saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability Ordering Information Type NO. Marking STA346 Package Code D2 SOT-89 Outline Dimensions
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STA346
STA346
OT-89
KST-8008-000
-100mA
-500mA,
-50mA
TRANSISTOR 10003
marking d2
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STB1188
Abstract: Transistor 8002 amplifier STD1766
Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766
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STB1188
STD1766
OT-89
KST-8002-002
STB1188
Transistor
8002 amplifier
STD1766
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-003
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Untitled
Abstract: No abstract text available
Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Switching Application Ordering Information
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STD361
A/150mA)
OT-89
KST-8007-001
500mA
150mA
-50mA
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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STD1664
STB1132
OT-89
KST-8004-003
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