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    KST80 Price and Stock

    Rochester Electronics LLC ADV7400KST-80

    VIDEO DECODER 1ADC 10 BIT 100PIN
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    DigiKey ADV7400KST-80 Bulk 12
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    Rochester Electronics LLC ADSP-2115KST-80

    16-BIT DIGITAL SIGNAL PROCESSOR
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    DigiKey ADSP-2115KST-80 Bulk 24
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    Analog Devices Inc ADV7400KST-80

    Video Decoder 1ADC 10-Bit 100-Pin LQFP '
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    Rochester Electronics ADV7400KST-80 6,588 1
    • 1 $26.88
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    Analog Devices Inc ADSP-2115KST-80

    ADSP-2115 - DSP MicroComputer, 16-Bit '
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    Rochester Electronics ADSP-2115KST-80 3,594 1
    • 1 $12.64
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    • 100 $11.88
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    KST80 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KST8050 Kexin NPN Transistors Original PDF
    KST8050 TY Semiconductor NPN Transistors - SOT-23 Original PDF
    KST8050S Kexin NPN Transistors Original PDF
    KST8050S TY Semiconductor NPN Transistors - SOT-23 Original PDF

    KST80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF KST8050 OT-23

    j3y transistor

    Abstract: J3Y marking transistor J3Y TRANSISTOR SMD j3y
    Text: Transistors Transistor T SMD Type Product specification KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF KST8050S OT-23 j3y transistor J3Y marking transistor J3Y TRANSISTOR SMD j3y

    j3y smd

    Abstract: SOT-23 J3Y SOT-23 J3Y npn
    Text: Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF KST8050S OT-23 j3y smd SOT-23 J3Y SOT-23 J3Y npn

    Y1 SOT-23

    Abstract: KST8050 marking y1 sot-23 y1 npn smd y1 Y1 marking Y1 smd smd marking y1 smd y1 sot-23 npn
    Text: Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


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    PDF KST8050 OT-23 Y1 SOT-23 KST8050 marking y1 sot-23 y1 npn smd y1 Y1 marking Y1 smd smd marking y1 smd y1 sot-23 npn

    10003 NPN

    Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


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    PDF STD1664 STB1132 OT-89 KST-8004-001 500mA, 10003 NPN STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003

    STB1132

    Abstract: STD1664
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


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    PDF STB1132 STD1664 OT-89 KST-8001-002 -500mA, -50mA -50mA, 30MHz STB1132 STD1664

    8002 amplifier

    Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


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    PDF STB1188 STD1766 OT-89 KST-8002-001 -200mA -500mA, 30MHz 8002 amplifier KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80

    KST-8007-002

    Abstract: MARKING CODE YA TRANSISTOR marking ya STD361
    Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.


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    PDF STD361 A/150 OT-89 KST-8007-002 KST-8007-002 MARKING CODE YA TRANSISTOR marking ya STD361

    Untitled

    Abstract: No abstract text available
    Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766


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    PDF STB1188 STD1766 OT-89 KST-8002-002

    Untitled

    Abstract: No abstract text available
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


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    PDF STD1766 STB1188 OT-89 KST-8006-002

    ZLDQ250A

    Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
    Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513


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    PDF pinwei0225 ZLDQ250A pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A

    Untitled

    Abstract: No abstract text available
    Text: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DP500F


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    PDF DN500F A/150 DP500F OT-89 KST-8012-003

    STB1188

    Abstract: STD1766
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


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    PDF STD1766 STB1188 OT-89 KST-8006-001 200mA 500mA STB1188 STD1766

    Untitled

    Abstract: No abstract text available
    Text: DP500F Se m i c o nduc t o r PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F • Switching Application Ordering Information Type NO. Marking DP500F Package Code


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    PDF DP500F DN500F DP500F OT-89 KST-8014-003 500mA 150mA

    STD1766

    Abstract: Transistor B2 SOT-89 STB1188
    Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


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    PDF STD1766 STB1188 OT-89 KST-8006-002 STD1766 Transistor B2 SOT-89 STB1188

    STB1132

    Abstract: Transistor STD1664 a1 sot-89
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


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    PDF STB1132 STD1664 OT-89 KST-8001-003 STB1132 Transistor STD1664 a1 sot-89

    Untitled

    Abstract: No abstract text available
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


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    PDF STD1664 STB1132 OT-89 KST-8004-002

    Untitled

    Abstract: No abstract text available
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


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    PDF STD1664 STB1132 OT-89 KST-8004-003

    sot-89 marking N5

    Abstract: DN500F DP500F N5 npn transistor SOT89 N5 MARKING CODE
    Text: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Complementary pair with DP500F • Switching Application


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    PDF DN500F A/150mA) DP500F OT-89 KST-8012-002 500mA 150mA sot-89 marking N5 DN500F DP500F N5 npn transistor SOT89 N5 MARKING CODE

    DP500F

    Abstract: Transistor DN500
    Text: DP500F Semiconductor PNP Silicon Transistor Description • • • • Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with DN500 Switching Application Ordering Information Type NO. Marking DP500F Package Code P5


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    PDF DP500F DN500 OT-89 KST-8014-004 DP500F Transistor DN500

    DN200F

    Abstract: DP200F P04 transistor transistor p04
    Text: DP200F Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.3V Typ. @IC /IB =-1A/-50mA) • Suitable for low voltage large current drivers • Excellent hFE linearity • Complementary pair with DN200F


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    PDF DP200F -1A/-50mA) DN200F OT-89 KST-8013-000 -100mA -50mA DN200F DP200F P04 transistor transistor p04

    TRANSISTOR 10003

    Abstract: STA346 marking d2
    Text: STA346 Semiconductor PNP Silicon Transistor Features • Low saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability Ordering Information Type NO. Marking STA346 Package Code D2 SOT-89 Outline Dimensions


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    PDF STA346 STA346 OT-89 KST-8008-000 -100mA -500mA, -50mA TRANSISTOR 10003 marking d2

    Untitled

    Abstract: No abstract text available
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


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    PDF STB1132 STD1664 OT-89 KST-8001-003

    DN500F

    Abstract: DP500F
    Text: DP500F Semiconductor PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F


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    PDF DP500F -3A/-150mA) DN500F OT-89 KST-8014-000 -100mA -150mA DN500F DP500F