ERICSSON TMA KRY 112
Abstract: KRY 112 89 Ericsson tma Ericsson tma for gsm 900 kry 112 212 ERICSSON BTS product ericsson kry 112 TMA 900 ERICSSON dual band tma KRY 112
Text: GSM Dual Duplex Tower Mounted Amplifier for 900 MHz With a Tower Mounted Amplifier TMA installed close to the antenna, the overall network performance and coverage is enhanced due to reduced system noise figure and improved uplink sensitivity. Excellent reliability
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ERICSSON TMA KRY 112
Abstract: Ericsson tma Ericsson tma for gsm 900 Ericsson KRY 112 ERICSSON dual band tma Ericsson TMA 1900 kry 112 212 KRY 112 212 -1 KRY 112 46 TMA ericsson
Text: GSM Dual Duplex Tower Mounted Amplifier for 1900 MHz Sub-bands With a Tower Mounted Amplifier TMA installed close to the antenna, the overall network performance and coverage is enhanced due to reduced system noise figure and improved uplink sensitivity.
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Ericsson tma for gsm 900
Abstract: ERICSSON TMA KRY 112 TMA ericsson 1800 Ericsson tma ericsson kry 112 ERICSSON dual band tma Tower Mounted Amplifiers ericsson KRY 112 46 ericsson BTS GSM 1800 KRY 112
Text: GSM Dual Duplex Tower Mounted Amplifier for 1800 MHz Sub-bands With a Tower Mounted Amplifier TMA installed close to the antenna, the overall network performance and coverage is enhanced due to reduced system noise figure and improved uplink sensitivity.
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ERICSSON TMA KRY 112
Abstract: Ericsson tma ERICSSON dual band tma DDTMA Ericsson KRY 112 71 Ericsson TMA 1900 Tower Mounted Amplifiers ericsson ericsson BTS and antenna installation RBS 2106 ericsson kry 112
Text: GSM Dual Duplex Tower Mounted Amplifier Fullband for 1900 MHz When installed close to the antenna, this Tower Mounted Amplifier TMA enhances the overall network performance and coverage. This is due to reduced system noise figure and improved uplink sensitivity.
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UL1950,
ERICSSON TMA KRY 112
Ericsson tma
ERICSSON dual band tma
DDTMA
Ericsson KRY 112 71
Ericsson TMA 1900
Tower Mounted Amplifiers ericsson
ericsson BTS and antenna installation
RBS 2106
ericsson kry 112
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KRY 112 75 1 dual band
Abstract: Ericsson tma KRY 112 75 1 ERICSSON TMA KRY 112 TMA ericsson 1800 ericsson BTS and antenna installation Ericsson tma kry 112 75 ERICSSON dual band tma DDTMA Tower Mounted Amplifiers ericsson
Text: GSM Dual Duplex Tower Mounted Amplifier Fullband for 1800 MHz When installed close to the antenna, this Tower Mounted Amplifier TMA enhances the overall network performance and coverage. This is due to reduced system noise figure and improved uplink sensitivity.
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KRY 112 75 1 dual band
Abstract: ERICSSON TMA KRY 112 KRY 112 75 1 Ericsson tma TMA ericsson 1800 KRY 112 75 ericsson kry 112 75 Ericsson tma kry 112 75 KRY 112 75 dual band Ericsson KRY 112
Text: GSM Duplex Tower Mounted Amplifier Fullband for 1800 MHz With a Tower Mounted Amplifier TMA installed close to the antenna, the overall network performance and coverage is enhanced due to reduced system noise figure and improved uplink sensitivity. Excellent reliability
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Untitled
Abstract: No abstract text available
Text: s., Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP145T Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: h FE =1000(Min)@l c =-5A • Collector-Emitter Sustaining Voltage-
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TIP145T
-40mA
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ERICSSON TMA KRY 112
Abstract: Ericsson tma Ericsson tma for gsm 900 ERICSSON dual band tma Tower Mounted Amplifiers ericsson Ericsson TMA 1900 ERICSSON TMA KRY 112 44 ericsson kry 112 TMA 1900 KRY 112 37
Text: GSM Duplex Tower Mounted Amplifier Fullband for 1900 MHz With a Tower Mounted Amplifier TMA installed close to the antenna, the overall network performance and coverage is enhanced due to reduced system noise figure and improved uplink sensitivity. Excellent reliability
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cosmo 5010
Abstract: KP5010
Text: PRODUCT SPECIFICATION Photocoupler cosmo SHEET 1 OF 5 KP5010 ELECTRONICS CORP. High Reliability Photocoupler • Features 1. High current transfer ratio V ceo : 3 0 0 V MIN (CTR : MIN. 600% at If =lmA, Vce=2V) 2. High isolation voltage between input and output (Viso:5000Vrms).
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KP5010
5000Vrms)
Jan-10-2001
100mA
cosmo 5010
KP5010
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KP4040
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION Photocoupler cosmo SHEET 1 OF 5 KP4040 ELECTRONICS CORP. High Reliability Photocoupler • Features 1. High current transfer ratio V ceo : 3 0 0 V MIN (CTR : MIN. 600% at If =lmA, Vce=2V) 2. High isolation voltage between input and output (Viso:5000Vrms).
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KP4040
5000Vrms)
Jan-10-2000
100mA
KP4040
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION Photocoupler cosmo KP1040 ELECTRONICS CO.,LTD. SHEET 1 OF 5 High Reliability Photocoupler • Features 1. Current transfer ratio CTR : MIN. 60% at IF=2mA Vce=5V 2. High isolation voltage between input and output (Viso : 5000Vrms). 3. Compact dual-in-line package.
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KP1040
5000Vrms)
Ta-25
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cosmo 1010 817
Abstract: 1010 817 1010- 817 cosmo 1010 -817 COSMO 1010 cosmo 1010 817 photocoupler K1010 cosmo 1010 817 K1010 817 Photocoupler Q 817 IC cosmo 1010 817
Text: PRODUCT SPECIFICATION Photocoupler cosmo K1010 ELECTRONICS CO.,LTD. SHEET 1 OF 5 High Reliability Photocoupler • Features 1. Current transfer ratio CTR : MIN. 60% at IF=5mA Vce=5V 2. High isolation voltage between input and output (Viso : 5000Vrms). 3. Compact dual-in-line package.
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K1010
5000Vrms)
Ta-25
cosmo 1010 817
1010 817
1010- 817
cosmo 1010 -817
COSMO 1010
cosmo 1010 817 photocoupler
K1010 cosmo 1010 817
K1010 817
Photocoupler Q 817
IC cosmo 1010 817
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kp1020
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION Photocoupler cosmo KP1020 ELECTRONICS CO.,LTD. SHEET 1 OF 5 High Reliability Photocoupler • Features 1. Current transfer ratio CTR : MIN. 60% at IF=2mA Vce=5V 2. High isolation voltage between input and output (Viso : 5000Vrms). 3. Compact dual-in-line package.
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KP1020
5000Vrms)
Ta-25
kp1020
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TH58V128FT
Abstract: TH58
Text: TOSHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPR O M ) organized as 528 bytes X 32 pages X 1024 blocks.
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TH58V128FT
TH58V128
TSOPII44
40-P-400-0
TH58V128FT
TH58
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Untitled
Abstract: No abstract text available
Text: 6 7 DO NOT SCALE A 5 3 2 DATE SYM 07MY96 REVISION RECORD AUTH 15305039 & 15305041 4 .1 8 3 .1 8 H 15° 2 .8 0 -2 C O IN EDGES TO E L I M I N A T E BURRS PLC5 ±0. 10— i 0 .8 0 / £3 £3_ □ _ EH ED -2 -2 960005 EMB AUG 15305039 & 15305041 11N097 A CCEPTABLE
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07MY96
11N097
13MY96
04SE96
R0071790
R0071791
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32AFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32 device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.
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TC58V32AFT
TC58V32
44/40-P-400-0
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cd 6283 ic
Abstract: circuit diagram for cd 6283 cd 6283 cs cd 6283 ic wiring diagram TD2410 TA2405 TD1225 d 6283 ic ic cd 6283 diagram MOV surge protection circuit diagram
Text: CRYDOM CO . 7MC » 2SME537 D OOQS DT R PIC R Y I B U LLE TIN 603A IN T E R N A T IO N A L . R E C T IF IE R Ü CRYDOM tzl~°u n n SERIES T ' Triac Output Solid-State Relay 5 Thru 25 Amp AC Output ' K -' ’ • • - ,.» - ■ * * * - - > 0819 -■ ■
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2SME537
SSM2S37
environm0245,
D-6000
cd 6283 ic
circuit diagram for cd 6283
cd 6283 cs
cd 6283 ic wiring diagram
TD2410
TA2405
TD1225
d 6283 ic
ic cd 6283 diagram
MOV surge protection circuit diagram
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.
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TC58128FT
128-MBIT
TC58128
528-byte
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TC58128FT
Abstract: TC58128FTI TOSHIBA cmos memory -NAND
Text: TOSHIBA TC58128FTI TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.
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TC58128FTI
128-MBIT
TC58128
528-byte
48-P-1220-0
TC58128FT
TC58128FTI
TOSHIBA cmos memory -NAND
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SmartMedia Logical Format
Abstract: TH58V128DC
Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
TH58V128DC
32MByte
FDC-22C
SmartMedia Logical Format
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TC58128FT
Abstract: 48-P-1220-0 kc04 TC58128 kc-04
Text: TOSHIBA TENTATIVE TC58128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2PROM) organized as 528 bytes X 32 pages X 1024blocks.
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TC58128FT
128-MBIT
TC58128
528-byte
48-P-1220-0
TC58128FT
kc04
kc-04
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) b it N A N D E le c tric a lly Erasab le and
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TC58128DC
128-MBIT
TC58128
528-byte
FDC-22A
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TC58128FT
Abstract: No abstract text available
Text: TOSHIBA TC58128FT TO SHIBA M OS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024blocks.
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TC58128FT
128-MBIT
TC58128
528-byte
48-P-1220-0
TC58128FT
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TH58512FT
Abstract: No abstract text available
Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE 512-MBIT 64M X SILICON GATE CMOS 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TH58512FT
512-MBIT
TH58512
528-byte
TH58512FT
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