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    KOREA ELECTRONICS TRANSISTOR Search Results

    KOREA ELECTRONICS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KOREA ELECTRONICS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KRC102S

    Abstract: KRC104S NPN transistor KRC101S KRC103S 106S KRC104S KRC105S KRC106S
    Text: KRC101SKRC106S _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design.


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    PDF KRC101S- KRC106S KRC101S KRC102S KRC103S KRC104S KRC105S KRC106S KRC103S KRC104S KRC104S NPN transistor 106S

    transistor marking JB

    Abstract: A301 A306 KRA301 KRA302 KRA303 KRA304 KRA305 KRA306
    Text: KRA301KRA306 EPITAXIAL PLANAR PNP TRANSISTOR _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.


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    PDF KRA301 KRA306 KRA301 KRA302 KRA303 KRA304 KRA305 KRA306 KRA303 KRA304 transistor marking JB A301 A306

    BCX19

    Abstract: No abstract text available
    Text: _ SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. BCX19 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • Super Mini Packaged Transistors for Hybrid Circuits. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    PDF BCX19 10j/A, 10juA, 100mA 300mA 500mA 500mA, 100MHz BCX19

    KTA1276

    Abstract: KTC3230
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3230 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. CORDLESS TELEPHONE TX FINAL AMPLIFIER. APPLICATION FOR 1.7MHz SYSTEM. FEAUTRES • Good Linearity of Iife• Complementary to KTA1276.


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    PDF KTC3230 KTA1276. 220AB 100x100x2mm 50x50x2mm KTA1276 KTC3230

    KN4402

    Abstract: KN4403
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN4402/4403 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • Complementary to KN4400/4401. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT


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    PDF KN4402/4403 KN4400/4401. KN4402/4403 f-140kHz KN4402 KN4403

    transistor hh 004

    Abstract: MJE13005F
    Text: KEC SEMICONDUCTOR MJE13005F TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. MILLIMETERS


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    PDF MJE13005F MJE13005F transistor hh 004

    KTA1659A

    Abstract: KTC4370A
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4370A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz Typ. . • Complementary to KTA1659A. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    PDF KTC4370A 100MHz KTA1659A. 220IS 100mA 500mA, 500mA KTA1659A KTC4370A

    KTC9012

    Abstract: KTC9013
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC9012 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity. • Complementary to KTC9013. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    PDF KTC9012 KTC9013. Cut-o50 -50mA -100mA, -10mA -20mA, 100MHz KTC9012 KTC9013

    KTA1703

    Abstract: No abstract text available
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1703 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. : V Ceo = -400V • Low Collector Saturation Voltage


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    PDF KTA1703 -400V -100mA, -10mA) KTA1703

    KTC2347

    Abstract: No abstract text available
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC2347 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV UHF OSCILLATOR APPLICATION. TV VHF MIXER APPLICATION. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage


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    PDF KTC2347 KTC2347

    KTA1270

    Abstract: KTC3202
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e linearity : hFE 2 =25Min. : VCE=6V, Ic=400mA. • Complementary to KTA1270.


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    PDF KTC3202 25Min. 400mA. KTA1270. KTA1270 KTC3202

    KRC407

    Abstract: KRC408 KRC409 409 marking s300h
    Text: KEC KOREA ELECTRONICS CO.,LTD. KRC407 SEMICONDUCTOR KRC409 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.


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    PDF KRC407 -KRC409 KRC408 KRC409 KRC407-409 KRC408 KRC409 409 marking s300h

    KTD2059

    Abstract: KTB1367
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2059 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Complementary to KTB1367. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 100


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    PDF KTD2059 KTB1367. 220IS KTD2059 KTB1367

    KRC243S

    Abstract: KRC244S KRC241S KRC242S KRC245S KRC246S
    Text: KRC241SKRC246S SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.


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    PDF KRC241S-KRC246S 800mA. KRC241S KRC242S KRC243S KRC244S KRC245S KRC246S KRC244S KRC241S

    transistor a1700

    Abstract: a1700 A1700 to-126 KTC2800
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1700 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz Typ. . • Complementary to KTC2800. MILLIMETERS MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    PDF A1700 100MHz KTC2800. -160V, -10mA, 100mA --500mA, -50mA --500mA transistor a1700 a1700 A1700 to-126 KTC2800

    TRANSISTOR 246

    Abstract: KTC9012 KTC9013 transistor KTC9012 transistor KTC9013 transistor KTC9012
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC9013 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity. • Complementary to KTC9012 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    PDF KTC9013 KTC9012 100mA, 100MHz TRANSISTOR 246 KTC9012 KTC9013 transistor KTC9012 transistor KTC9013 transistor KTC9012

    ph-13 transistor

    Abstract: BC517
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    PDF BC517 100mA, 100MHz ph-13 transistor BC517

    KTB772

    Abstract: KTD882 ice3
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB772 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTD882. MILLIMETERS MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC


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    PDF KTB772 KTD882. KTB772 KTD882 ice3

    2N5401C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KEC KOREA ELECTRONICS CO.,LTD. 2N5401C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo=-160V , V Ceo = -150V • Low Leakage Current.


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    PDF 2N5401C -160V, -150V -50nA -120V -50mA, -10J/A, -10mA -50mA -10mA, 2N5401C

    KTA1276

    Abstract: KTC3230
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1276 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife• Complementary to KTC3230. MILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage


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    PDF KTA1276 KTC3230. 220AB -10mA, KTA1276 KTC3230

    MJE13005

    Abstract: No abstract text available
    Text: K EC . SEMICONDUCTOR MJE13005 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. A


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    PDF MJE13005 MJE13005

    KTB1370

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1370 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current : Ic=-7A. • Low Collector-Emitter Saturation Voltage.


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    PDF KTB1370 220IS KTB1370

    KTC3121

    Abstract: TRANSISTOR MARKING YB
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3121 EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. COMMON BASE TV TUNER, UHF CONVERTER APPLICATION. (COMMON BASE) FEATURES • High Transition Frequency : fi = 1500MHz (Typ.).


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    PDF KTC3121 1500MHz 100MHz KTC3121 TRANSISTOR MARKING YB

    KTB2955

    Abstract: KTD3055
    Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB2955. • Recommended for 30W —35W Audio Frequency Amplifier output Stage. MILLIMETERS


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    PDF KTD3055 KTB2955. 220AB 100mS KTB2955 KTD3055