Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KMM5364003C Search Results

    KMM5364003C Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM5364003CK-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CK-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CKG Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS 4K/2K Refresh 5V Original PDF
    KMM5364003CKG-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CKG-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CSW-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CSW-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CSWG Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4 4K Refresh 5V Original PDF
    KMM5364003CSWG-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CSWG-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF

    KMM5364003C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM5364003CSW

    Abstract: KMM5364003CSWG
    Text: DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE


    Original     		PDF KMM5364003CSW/CSWG 4Mx36 4Mx16 KMM5364003CSW/CSWG KMM5364003C 4Mx36bits KMM5364003C KMM5364003CSW KMM5364003CSWG

    KMM5364003CK

    Abstract: KMM5364003CKG KMM5364103CK KMM5364103CKG
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE 4Byte 4Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


    Original     		PDF KMM5364003CK/CKG KMM5364103CK/CKG 4Mx36 KMM5364103CK/CKG KMM53640 KMM5364003CK KMM5364003CKG KMM5364103CK KMM5364103CKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D


    Original     		PDF M53620412DW0/DB0 M53620412DW0/DB0 M53620412D 4Mx36bits M53620412D 24-pin 28-pin 72-pin M53620412DW0

    c60 equivalent

    Abstract: dram 4mx4 kmm5364
    Text: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C


    Original     		PDF M53620412CW0/CB0 M53620412CW0/CB0 M53620412C 4Mx36bits M53620412C 24-pin 28-pin 72-pin M53620412CW0 c60 equivalent dram 4mx4 kmm5364

    Untitled

    Abstract: No abstract text available
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE KMM5364003CK/CKG & KMM5364103CK/CKG with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53640 1 03 C K is a 4 M x3 6 b its RAM


    OCR Scan     		PDF KMM5364003CK/CKG KMM5364103CK/CKG KMM5364003CK/CKG KMM5364103CK/CKG