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    KM6410 Price and Stock

    Samsung Semiconductor KM641001J-20

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    Bristol Electronics KM641001J-20 103
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    Quest Components KM641001J-20 82
    • 1 $9.177
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    KM641001J-20 39
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    Samsung Semiconductor KM641003BJ-8

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    Bristol Electronics KM641003BJ-8 15
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    Quest Components KM641003BJ-8 874
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    KM641003BJ-8 511
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    Samsung Semiconductor KM641003CJ-12

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    Samsung Semiconductor KM641003J-15

    Static RAM, 256Kx4, 32 Pin, Plastic, SOJ
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    Quest Components KM641003J-15 220
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    KM641003J-15 1
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    Samsung Semiconductor KM641001P-35

    256K X 4 STANDARD SRAM, 35 ns, PDIP28
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    Quest Components KM641001P-35 52
    • 1 $12
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    KM6410 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM641001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM641001-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM641001-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM641001-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM641001A Samsung Electronics 256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range Original PDF
    KM641001A-15 Samsung Electronics 256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range Original PDF
    KM641001A-20 Samsung Electronics 256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range Original PDF
    KM641001AJ-12 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641001AJ-15 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641001B Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641001B-15 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641001B-20 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641001BJ-15 Samsung Electronics 256K x 4 Bit (with OE)High-Speed CMOS Static RAM Original PDF
    KM641001BJ-20 Samsung Electronics 256K x 4 Bit (with OE)High-Speed CMOS Static RAM Original PDF
    KM641001BL-15 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641003A Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003A-12 Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003A-15 Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003A-20 Samsung Electronics 256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range Original PDF
    KM641003AJ-12 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF

    KM6410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM641003B

    Abstract: KM641003B-10 KM641003B-12 KM641003B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target


    Original     		PDF KM641003B 256Kx4 32-SOJ-400 KM641003B KM641003B-10 KM641003B-12 KM641003B-8

    KM641001B

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		PDF KM641001B/BL 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX KM641001B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    Original     		PDF KM641001B 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX

    01-I04

    Abstract: KM641001A KM641001A-15 KM641001A-20
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SQJ-400 KM641001A 576-bit OOPm53 01-I04 KM641001A-15 KM641001A-20

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 KM641001A-20

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA

    KM641001

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)


    OCR Scan     		PDF KM641001 KM641001 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J 28-SQJ-400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 41001A-20

    Untitled

    Abstract: No abstract text available
    Text: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		PDF KM641003B 256Kx4 8/10/12nsafter 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM641001A 256Kx 15/17/20ns 190/180/170mA 145/145/140mA

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		PDF KM641003B 256Kx4 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 25 6K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641001P/J-20: 150m A (max) K M 641001P/J-25: 130m A (max)


    OCR Scan     		PDF KM641001 KM641001P/J-20: 641001P/J-25: KM641001P/J-35: KM641001P: 28-pin 641001J: piM641001

    M641005

    Abstract: No abstract text available
    Text: KM641005 CMOS SRAM 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20 ,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641005P/J-20: 150m A (max) K M641005P/J-25: 130m A (max)


    OCR Scan     		PDF KM641005 KM641005P/J-20: M641005P/J-25: M641005P/J-35: KM641005P: 32-pin 641005J: M641005

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa st A cce ss T im e 1 5,1 7,20 n s(M ax.) T h e K M 6 4 1 0 0 1 A is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d S ta tic • Low P o w e r D issip a tio n


    OCR Scan     		PDF KM641001A

    KM641003J

    Abstract: No abstract text available
    Text: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)


    OCR Scan     		PDF KM641003 KM641003J-15: 170mA KM641003J-17: 160mA KM641003J-20: 150mA KM641003J: 32-Pin KM641003 KM641003J

    KM641001

    Abstract: KM641001-25 km641001j KM641001-35 741-145
    Text: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)


    OCR Scan     		PDF KM641001 KM641001 150mA KM641001-25 130mA KM641001-35 110mA KM641001P 28-DIP-400 KM641001J km641001j 741-145

    KM641003J-15

    Abstract: KM641003J-20
    Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)


    OCR Scan     		PDF KM641003 KM641003J-15 KM641003J-17 KM641003J-20: KM641003J 32-SOJ-4CK) KM641003 576-bit KM641003J-15 KM641003J-20

    bm42

    Abstract: No abstract text available
    Text: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : K M 64 100 3-1 5: 1 70mA (Max.)


    OCR Scan     		PDF KM641003 KM641003-15 170mA KM641003-17 160mA KM641003-20 150mA KM641003J 32-SOJ-4CK) KM641003 bm42

    KM641003A

    Abstract: KM641003A-12 KM641003A-15 KM641003A-20
    Text: PRELIMINARY CMOS SRAM KM641003A 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5 ,1 7 ,2 0 ns(Max.) • Low Pow er Dissipation Standby (TT L) : 3 0 m A(M ax.) Th e K M 641003A is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM641003A KM641003A-12 KM641003A-15 KM641003A-17: KM641003A-20: KM641003AJ 32-SOJ-400 KM641003A 576-bit KM641003A-12 KM641003A-15 KM641003A-20

    Untitled

    Abstract: No abstract text available
    Text: KM641001B CMOS SRAM Document Tills 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 R ev.1.0 Release to Prelim inary Data Sheet.


    OCR Scan     		PDF KM641001B 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)


    OCR Scan     		PDF KM641001 KM641001 576-bit

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM641005 KM641005P/J-20: 150mA KM641005P/J-25: 130mA KM641005P/J-35: 110mA KM641005P: 32-pin 400mil)

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)


    OCR Scan     		PDF D017bMfl KM641001 KM641001P/J-17 KM641001P/J-20 150mA KM641001P/J-25 130mA KM641001P/J-30 110mA KM641001P:

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641003C CMOS SRAM D ocument iiiis m , jg. X S a S j c 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998 Remark Prelim inary The attached d ata sheets are prepared and approved by SAM SU N G Electronics. S AM SU NG Electronics CO., LTD. reserve th e right to change the


    OCR Scan     		PDF KM641003C 256Kx4 32-SOJ-400