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    Samsung Semiconductor KM616B4002J-12

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    Bristol Electronics KM616B4002J-12 5
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    Samsung Semiconductor KM616B4002J-15

    Static RAM, 256Kx16, 44 Pin, Plastic, SOJ
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    Quest Components KM616B4002J-15 5
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    KM616B4002J Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12 :270 mA(Max.) KM616B4002J -13 :26 5 mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 16Bit KM616B4002J KM616B4002J 44-SOJ-400 512x16 ber-1996

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM616B4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM616B4002J-10: 280mA(Max.) KM616B4002J-12: 270mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002J-10: 280mA KM616B4002J-12: 270mA KM616B4002J-15: 260mA KM616B4002J 44-SQJ-400 KM616B4002

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating KM616B4002J-10 : 280mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002J-10 280mA KM616B4002J-12: 270mA KM616B4002J-15 260mA KM616B4002J 44-SQJ-400 KM616B4002

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12:270 mA(Max.) KM616B4002J -13:265 mA(Max.)


    OCR Scan     		PDF KM616B4002 16Bit KM616B4002J KM616B4002J 44-SOJ-400 KM616B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM616B4002 uses 16 com mon input and output lines and has an output enable pin w hich operates


    OCR Scan     		PDF KM616B4002 KM616B4002-12 KM616B4002-13 KM616B4002-15 KM616B4002J 44-SQJ-400 KM616B4002 304-bit i/o9-I/o16

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM616B4002 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616B4002-12 : 270 mA(Max.) KM616B4002-13:265 mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002-12 KM616B4002-13 KM616B4002-15 KM616B4002J 44-SQJ-400 KM616B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616B4002 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM 616B4002J-10 : 280 mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 616B4002J-10 KM616B4002J-12 KM616B4002J-15 KM616B4002J 44-SOJ-400 KM616B4002 304-bit KM616B400ddress.

    KM616B4002J

    Abstract: SRAM 10ns
    Text: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating K M 616B 4002J-10: 280mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002J-10 280mA KM616B4002J-12 270mA KM616B4002J-15 260mA KM616B4002J 44-SQJ-400 KM616B4002 KM616B4002J SRAM 10ns

    Untitled

    Abstract: No abstract text available
    Text: KM616B4002 BiCMOS SRAM 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Law Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 3QmA(Max.) Operating KM 816B4002-12 : 270mA(Max ) KM616B4002 -1 3 : 265mA(Max.)


    OCR Scan     		PDF KM616B4002 256Kx 816B4002-12 270mA KM616B4002 265mA 260mA KM616B4002J 44-SOJ-4QO